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Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2191-2203

2007

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Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Journal of applied physics, 2007-10, Vol.102 (8), p.083715-083715-14

2007

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Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.727-736

2008

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Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2886-2897

2008

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Internal modification morphologies in glasses irradiated by nanosecond laser pulses

Applied physics. A, Materials science & processing, 2022-10, Vol.128 (10), Article 876

2022

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Energy and exergy analysis of a stacked complex sequence and alternatives for ternary distillation

Separation and purification technology, 2023-01, Vol.304, p.122384, Article 122384

2023

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Stacked complex sequences for ternary zeotropic distillation

Computers & chemical engineering, 2022-05, Vol.161, p.107744, Article 107744

2022

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Wernicke encephalopathy in a patient after liver transplantation: A case report

World journal of gastroenterology : WJG, 2017-12, Vol.23 (47), p.8432-8436

2017

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Accuracy balancing for the simulation of gate-all-around junctionless nanowire transistors using discrete Wigner transport equation

AIP advances, 2018-11, Vol.8 (11), p.115105-115105-6

2018

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Cloning and Functional Characterization of SpZIP2

Genes, 2022-12, Vol.13 (12), p.2395

2022

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Stacked Side-Stream distillation sequences

Chemical engineering science, 2023-10, Vol.280, p.119075, Article 119075

2023

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Robust Bayesian optimization for flexibility analysis of expensive simulation-based models with rigorous uncertainty bounds

Computers & chemical engineering, 2024-02, Vol.181, p.108515, Article 108515

2024

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Isolation of Three Metallothionein Genes and Their Roles in Mediating Cadmium Resistance

Agronomy (Basel), 2022-11, Vol.12 (12), p.2971

2022

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A review of hydrodynamic and energy-transport models for semiconductor device simulation

Proceedings of the IEEE, 2003, Vol.91 (2), p.251-274

2003

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Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equation

Journal of computational electronics, 2017-03, Vol.16 (1), p.148-154

2017

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Plantwide optimization coupled with column sequencing and stacking using a process simulator automation server

Computers & chemical engineering, 2021-03, Vol.146, p.107196, Article 107196

2021

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Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions

Applied physics letters, 2008-02, Vol.92 (8), p.082103-082103-3

2008

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Research progress on pathological changes of brain caused by status epilepticus

Zhongguo xian dai shen jing ji bing za zhi, 2015-11, Vol.15 (11), p.852-858

2015

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Quantum correction for the Monte Carlo simulation via the effective conduction-band edge equation

Semiconductor science and technology, 2004-01, Vol.19 (1), p.54-60

2004

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One-flux theory of saturated drain current in nanoscale transistors

Solid-state electronics, 2012-12, Vol.78, p.115-120

2012

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Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential

IEEE transactions on nanotechnology, 2002-12, Vol.1 (4), p.238-242

2002

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Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

Computer physics communications, 2002-08, Vol.147 (1), p.214-217

2002

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A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition

IEEE transactions on nanotechnology, 2002-12, Vol.1 (4), p.243-246

2002

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Monte Carlo simulation of symmetric and asymmetric double-gate MOSFETs using Bohm-based quantum correction

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.291-294

2003

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A new method for extracting carrier mobility from Monte Carlo device simulation

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.399-401

2001

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Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation

Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation

Internal modification morphologies in glasses irradiated by nanosecond laser pulses

Energy and exergy analysis of a stacked complex sequence and alternatives for ternary distillation

Stacked complex sequences for ternary zeotropic distillation

Wernicke encephalopathy in a patient after liver transplantation: A case report

Accuracy balancing for the simulation of gate-all-around junctionless nanowire transistors using discrete Wigner transport equation

Cloning and Functional Characterization of SpZIP2

Stacked Side-Stream distillation sequences

Robust Bayesian optimization for flexibility analysis of expensive simulation-based models with rigorous uncertainty bounds

Isolation of Three Metallothionein Genes and Their Roles in Mediating Cadmium Resistance

A review of hydrodynamic and energy-transport models for semiconductor device simulation

Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equation

Plantwide optimization coupled with column sequencing and stacking using a process simulator automation server

Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions

Research progress on pathological changes of brain caused by status epilepticus

Quantum correction for the Monte Carlo simulation via the effective conduction-band edge equation

One-flux theory of saturated drain current in nanoscale transistors

Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential

Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition

Monte Carlo simulation of symmetric and asymmetric double-gate MOSFETs using Bohm-based quantum correction

A new method for extracting carrier mobility from Monte Carlo device simulation

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