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Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.623-625

2013

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Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Journal of materials science. Materials in electronics, 2020-07, Vol.31 (13), p.10078-10083

2020

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Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Microsystems & nanoengineering, 2023-03, Vol.9 (1), p.40-40, Article 40

2023

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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition

Journal of materials science. Materials in electronics, 2020-06, Vol.31 (12), p.9796-9802

2020

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Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Nanomaterials (Basel, Switzerland), 2023-05, Vol.13 (9), p.1568

2023

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Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.23-27

2024

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Influence of nanowires length on performance of crystalline silicon solar cell

Applied physics letters, 2011-04, Vol.98 (15), p.151116-151116-3

2011

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A 200-MS/s 10-Bit SAR ADC Applied in WLAN Systems

Applied sciences, 2023-06, Vol.13 (12), p.7040

2023

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Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors

Journal of materials science. Materials in electronics, 2021-10, Vol.32 (19), p.24107-24114

2021

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A 2.4 GHz quadrature LC-VCO with combination of tunable pulse coupling and parallel coupling to optimize phase noise

Analog integrated circuits and signal processing, 2020, Vol.102 (1), p.205-212

2020

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Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

IEEE electron device letters, 2015-07, Vol.36 (7), p.648-650

2015

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Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4490-4498

2018

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Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs

IEEE electron device letters, 2016-04, Vol.37 (4), p.363-365

2016

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Understanding dipole formation at dielectric/dielectric hetero-interface

Applied physics letters, 2018-10, Vol.113 (18)

2018

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Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)

Journal of materials science. Materials in electronics, 2020, Vol.31 (1), p.26-33

2020

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Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1)

Journal of materials science. Materials in electronics, 2020, Vol.31 (1), p.105-114

2020

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Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Nanomaterials (Basel, Switzerland), 2022-08, Vol.12 (15), p.2704

2022

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Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4546-4549

2016

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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

Micromachines (Basel), 2021-10, Vol.12 (11), p.1296

2021

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Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

Micromachines (Basel), 2022-05, Vol.13 (5), p.748

2022

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Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2611-2616

2017

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Blended Glial Cell's Spiking Neural Network

IEEE access, 2023, Vol.11, p.43566-43582

2023

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Silicon nanowire-array-textured solar cells for photovoltaic application

Journal of applied physics, 2010-11, Vol.108 (9), p.094318-094318-5

2010

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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Micromachines (Basel), 2022-09, Vol.13 (10), p.1579

2022

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Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices

Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning

Influence of nanowires length on performance of crystalline silicon solar cell

A 200-MS/s 10-Bit SAR ADC Applied in WLAN Systems

Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors

A 2.4 GHz quadrature LC-VCO with combination of tunable pulse coupling and parallel coupling to optimize phase noise

Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs

Understanding dipole formation at dielectric/dielectric hetero-interface

Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)

Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1)

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Blended Glial Cell's Spiking Neural Network

Silicon nanowire-array-textured solar cells for photovoltaic application

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

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