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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Misfit dislocations in In-rich InGaN/GaN quantum well structures

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1729-1732

2006

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Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

Journal of applied physics, 2003-08, Vol.94 (3), p.1565-1574

2003

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Towards a better understanding of trench defects in InGaN/GaN quantum wells

Journal of physics. Conference series, 2013-11, Vol.471, p.12042

2013

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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Indium segregation in InGaN quantum-well structures

Applied physics letters, 2000-03, Vol.76 (12), p.1600-1602

2000

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Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Journal of crystal growth, 2007, Vol.298, p.504-507

2007

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Degradation of GaN-based quantum well light-emitting diodes

Journal of applied physics, 2008-01, Vol.103 (2), p.024501-024501-6

2008

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Exciton localization in InGaN/GaN single quantum well structures

Physica Status Solidi (b), 2003-11, Vol.240 (2), p.344-347

2003

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Structural properties of ultrathin InGaN/GaN quantum wells

Physica status solidi. A, Applications and materials science, 2008-11, Vol.205 (11), p.2556-2559

2008

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A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1819-1823

2006

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Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design

Journal of crystal growth, 2000-12, Vol.221 (1), p.622-628

2000

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Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

Journal of crystal growth, 2007, Vol.298, p.418-424

2007

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Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

Semiconductor science and technology, 1993-06, Vol.8 (6), p.998-1010

1993

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High quantum efficiency InGaN/GaN structures emitting at 540 nm

Physica status solidi. C, 2006-06, Vol.3 (6), p.1970-1973

2006

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Material optimisation for AlGaN/GaN HFET applications

Journal of crystal growth, 2001-09, Vol.230 (3), p.573-578

2001

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Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

Semiconductor science and technology, 2001-05, Vol.16 (5), p.402-405

2001

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Studies of efficiency droop in GaN based LEDs

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.765-769

2012

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Towards a better understanding of trench defects in InGaN/GaN quantum wells

Journal of physics. Conference series, 2013-01, Vol.471 (1), p.1-4

2013

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Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor

Journal of crystal growth, 2007-05, Vol.303 (1), p.318-322

2007

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GaN/InGaN quantum wells grown in a close coupled showerhead reactor

Journal of crystal growth, 2003-02, Vol.248, p.518-522

2003

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GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.354-359

2002

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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

Journal of crystal growth, 2000-12, Vol.221 (1), p.142-148

2000

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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

Misfit dislocations in In-rich InGaN/GaN quantum well structures

Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

Towards a better understanding of trench defects in InGaN/GaN quantum wells

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

Indium segregation in InGaN quantum-well structures

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Degradation of GaN-based quantum well light-emitting diodes

Exciton localization in InGaN/GaN single quantum well structures

Structural properties of ultrathin InGaN/GaN quantum wells

A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design

Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

High quantum efficiency InGaN/GaN structures emitting at 540 nm

Material optimisation for AlGaN/GaN HFET applications

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

Studies of efficiency droop in GaN based LEDs

Towards a better understanding of trench defects in InGaN/GaN quantum wells

Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor

GaN/InGaN quantum wells grown in a close coupled showerhead reactor

GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

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