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Time resolved photoluminescence of porous silicon : evidence for tunneling limited recombination in a band of localized states

Applied physics letters, 1993-05, Vol.62 (19), p.2381-2383

1993

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The origin of visible photoluminescence in low power a-Si1-xCx :H with x > 0.2

Solid state communications, 1999-06, Vol.111 (4), p.193-197

TESSLER, L. R

1999

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Aluminium doping of a-Ge:H

Journal of physics. Condensed matter, 1993-08, Vol.5 (33A), p.A353-A354, Article A353

Tessler, L R

1993

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Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

ECS journal of solid state science and technology, 2018-01, Vol.7 (2), p.N7-N14

2018

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Optical gain in a-SiNx:H〈Nd

Optical materials, 2005-02, Vol.27 (5), p.769-772

2005

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Aluminium in hydrogenated amorphous germanium

Philosophical magazine letters, 1993-04, Vol.67 (4), p.273-278

Tessler, Leandro R.

1993

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Evolution of the Er environment in a-Si:H under annealing: ion implantation versus co-deposition

Journal of non-crystalline solids, 2000-05, Vol.266, p.598-602

2000

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EXAFS study of noble gases implanted in highly stressed amorphous carbon films

Journal of non-crystalline solids, 2002-04, Vol.299, p.805-809

2002

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Contacts of very low resistivity to YBaCuO thin films

Journal of physics. D, Applied physics, 1988-11, Vol.21 (11), p.1652-1653

1988

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1.54 μm luminescence quenching of erbium-doped hydrogeated amorphous silicon deposited by D.C. magnetron sputtering

Physica status solidi. C, 2004-02, Vol.1 (2), p.285-289

2004

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Near infra-red photoluminescence of Nd(3+) in hydrogenated amorphous silicon sub-nitrides a-SiN(x):H(Nd)

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-12, Vol.B105 (1-3), p.188-191

2003

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Temperature independent Er(3+) photoluminescence lifetime in a-Si:H < Er > and a-SiO(x):H < Er >

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-12, Vol.B105 (1-3), p.165-168

2003

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Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC

Journal of non-crystalline solids, 1996-05, Vol.198, p.907-910

1996

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Pressure-induced physical changes of noble gases implanted in highly stressed amorphous carbon films

Physical review. B, Condensed matter, 2003-08, Vol.68 (5), Article 054104

2003

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Annealing Temperature Dependence of 1550 NM Emission of Hydrogenated Amorphous Silicon Films Co-Deposited with Erbium

ECS transactions, 2007-11, Vol.4 (1), p.481-486

2007

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Origin of visible photoluminescence in low power a-Si sub(1-x)C sub(x):H with x > 0.2

Solid state communications, 1999-01, Vol.111 (4), p.193-197

Tessler, L R

1999

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The silicon neighborhood across the a-Si:H to mc-Si transition by X-ray absorption spectroscopy (XAS)

Thin solid films, 2003-04, Vol.430 (1-2), p.83-86

2003

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Cathodic and anodic glow discharge silicon-carbon alloys (a-Si 1- xC x:H) from x = 0.5 to 1: A comparative study by photoemission (UPS) and photoluminescence (PL)

Journal of non-crystalline solids, 1996-05, Vol.198, p.628-631

1996

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Evidence for individual vortex pinning in ceramic YBa2Cu3O7-δ

Applied physics letters, 1991-02, Vol.58 (5), p.528-530

1991

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Optical gain in a-SiNx:H

Optical materials (Amsterdam), 2005, Vol.27 (5), p.769-772

2005

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Photoluminescence studies on silicon carbon alloys

Journal of non-crystalline solids, 1993-12, Vol.164-166, p.1027-1030

1993

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Photoluminescence of Er-doped silicon nanoparticles from sputtered SiOx thin films

Optical materials, 2006-05, Vol.28 (6-7), p.842-845

2006

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Preparation and patterning of YBaCuO thin films obtained by sequential deposition of CuOx/Y2O3/BaF2

Applied physics letters, 1988-08, Vol.53 (8), p.698-699

1988

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OPTIMIZATION OF THE AS-DEPOSITED 1.54 mm PHOTOLUMINESCENCE INTENSITY IN a-SiOx:HEr

Journal of non-crystalline solids, 2000-01, Vol.266-269, p.603-607

2000

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Hall voltage measurements using ac lock‐in detection

Review of scientific instruments, 1991-03, Vol.62 (3), p.835-836

1991

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Time resolved photoluminescence of porous silicon : evidence for tunneling limited recombination in a band of localized states

The origin of visible photoluminescence in low power a-Si1-xCx :H with x > 0.2

Aluminium doping of a-Ge:H

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

Optical gain in a-SiNx:H〈Nd

Aluminium in hydrogenated amorphous germanium

Evolution of the Er environment in a-Si:H under annealing: ion implantation versus co-deposition

EXAFS study of noble gases implanted in highly stressed amorphous carbon films

Contacts of very low resistivity to YBaCuO thin films

1.54 μm luminescence quenching of erbium-doped hydrogeated amorphous silicon deposited by D.C. magnetron sputtering

Near infra-red photoluminescence of Nd(3+) in hydrogenated amorphous silicon sub-nitrides a-SiN(x):H(Nd)

Temperature independent Er(3+) photoluminescence lifetime in a-Si:H < Er > and a-SiO(x):H < Er >

Optoelectronic properties of highly conductive microcrystalline SiC produced by laser crystallisation of amorphous SiC

Pressure-induced physical changes of noble gases implanted in highly stressed amorphous carbon films

Annealing Temperature Dependence of 1550 NM Emission of Hydrogenated Amorphous Silicon Films Co-Deposited with Erbium

Origin of visible photoluminescence in low power a-Si sub(1-x)C sub(x):H with x > 0.2

The silicon neighborhood across the a-Si:H to mc-Si transition by X-ray absorption spectroscopy (XAS)

Cathodic and anodic glow discharge silicon-carbon alloys (a-Si 1- xC x:H) from x = 0.5 to 1: A comparative study by photoemission (UPS) and photoluminescence (PL)

Evidence for individual vortex pinning in ceramic YBa2Cu3O7-δ

Optical gain in a-SiNx:H

Photoluminescence studies on silicon carbon alloys

Photoluminescence of Er-doped silicon nanoparticles from sputtered SiOx thin films

Preparation and patterning of YBaCuO thin films obtained by sequential deposition of CuOx/Y2O3/BaF2

OPTIMIZATION OF THE AS-DEPOSITED 1.54 mm PHOTOLUMINESCENCE INTENSITY IN a-SiOx:HEr

Hall voltage measurements using ac lock‐in detection

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