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Ion beams in silicon processing and characterization

Journal of applied physics, 1997-05, Vol.81 (10), p.6513-6561

1997

Volltextzugriff (PDF)

Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs

IEEE electron device letters, 2001-03, Vol.22 (3), p.145-147

2001

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Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Applied physics letters, 1992-04, Vol.60 (14), p.1700-1702

1992

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Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

IEEE transactions on electron devices, 1997-02, Vol.44 (2), p.297-303

1997

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Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

IEEE electron device letters, 1997-05, Vol.18 (5), p.206-208

1997

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A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1264-1273

1996

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Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of n- and p-type MOSFET's

IEEE transactions on electron devices, 1999-06, Vol.46 (6), p.1290-1294

1999

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Modeling of direct tunneling current through gate dielectric stacks

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1851-1857

2000

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Models for electron and hole mobilities in MOS accumulation layers

IEEE transactions on electron devices, 1999-08, Vol.46 (8), p.1749-1759

1999

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Monte Carlo simulation of boron implantation into single-crystal silicon

IEEE transactions on electron devices, 1992-07, Vol.39 (7), p.1614-1621

1992

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Monte Carlo simulation of electron transport in simple orthorhombically strained silicon

Journal of applied physics, 2000-10, Vol.88 (8), p.4717-4724

2000

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Ferroelectric materials for 64 Mb and 256 Mb DRAMs

IEEE circuits and devices magazine, 1990-01, Vol.6 (1), p.17-26

1990

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An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.643-645

2000

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A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

IEEE transactions on electron devices, 1989-06, Vol.36 (6), p.1117-1124

1989

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Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon

Applied physics letters, 1990-12, Vol.57 (25), p.2701-2703

1990

Volltextzugriff (PDF)

A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

IEEE transactions on electron devices, 1997-07, Vol.44 (7), p.1172-1173

1997

Volltextzugriff (PDF)

Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers

Solid-state electronics, 1991-06, Vol.34 (6), p.545-552

1991

Volltextzugriff (PDF)

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

IEEE transactions on electron devices, 1991-01, Vol.38 (1), p.151-159

1991

Volltextzugriff (PDF)

New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling

Electronics letters, 1993, Vol.29 (21), p.1894-1896

1993

Volltextzugriff (PDF)

Experimental determination of electron and hole mobilities in MOS accumulation layers

IEEE electron device letters, 1997-05, Vol.18 (5), p.200-202

1997

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The Viability of GeH4‐Based In Situ Clean for Low Temperature Silicon Epitaxial Growth

Journal of the Electrochemical Society, 1996-07, Vol.143 (7), p.2387-2391

1996

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Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

IEEE transactions on semiconductor manufacturing, 1996-02, Vol.9 (1), p.49-58

1996

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An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's

IEEE electron device letters, 1992-11, Vol.13 (11), p.554-556

1992

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A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

IEEE transactions on electron devices, 1996-01, Vol.43 (1), p.90-96

1996

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Relaxation time approximation and mixing of hot and cold electron populations

Electronics letters, 1992-06, Vol.28 (12), p.1173-1175

1992

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Ion beams in silicon processing and characterization

Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs

Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of n- and p-type MOSFET's

Modeling of direct tunneling current through gate dielectric stacks

Models for electron and hole mobilities in MOS accumulation layers

Monte Carlo simulation of boron implantation into single-crystal silicon

Monte Carlo simulation of electron transport in simple orthorhombically strained silicon

Ferroelectric materials for 64 Mb and 256 Mb DRAMs

An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si

A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers

Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon

A simple model for quantum mechanical effects in hole inversion layers in silicon PMOS devices

Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling

Experimental determination of electron and hole mobilities in MOS accumulation layers

The Viability of GeH4‐Based In Situ Clean for Low Temperature Silicon Epitaxial Growth

Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's

A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs

Relaxation time approximation and mixing of hot and cold electron populations

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