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Printed environmentally friendly supercapacitors with ionic liquid electrolytes on paper

Journal of power sources, 2014-12, Vol.271, p.298-304

2014

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Computational modeling of charge dissipation of fabrics containing conductive fibers

Journal of electrostatics, 2003-05, Vol.58 (1), p.117-133

2003

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Nanomechanical force measurements of gliadin protein interactions

Biopolymers, 2006-12, Vol.83 (6), p.658-667

2006

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Influence of Substrate on Plasmon-Induced Absorption Enhancements

Plasmonics (Norwell, Mass.), 2016-04, Vol.11 (2), p.627-635

2016

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Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy

Journal of applied physics, 1993-10, Vol.74 (7), p.4565-4570

TAPPURA, K

1993

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A new soft-core potential function for molecular dynamics applied to the prediction of protein loop conformations

Journal of computational chemistry, 2000-04, Vol.21 (5), p.388-397

2000

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Influence of rotational energy barriers to the conformational search of protein loops in molecular dynamics and ranking the conformations

Proteins, structure, function, and bioinformatics, 2001-08, Vol.44 (3), p.167-179

Tappura, Kirsi

2001

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Fluorimetric Oxygen Sensor for In Vitro Cell Models

Procedia engineering, 2016, Vol.168, p.610-613

2016

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High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

IEEE photonics technology letters, 1996-03, Vol.8 (3), p.319-321

1996

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A comparative evaluation of molecular recognition by monolayers composed of synthetic receptors or oriented antibodies

Biosensors & bioelectronics, 2008-12, Vol.24 (4), p.1036-1038

2008

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GaInAsP gas-source MBE technology

Thin solid films, 1995-10, Vol.267 (1), p.99-105

1995

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Unstable regions in the growth of GaInAsP by gas-source molecular beam epitaxy

Journal of crystal growth, 1993-08, Vol.131 (3), p.309-315

1993

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Growth of Ga0.29In0.71As0.61P0.39 (λ ~ 1.3 μm) on InP by gas source molecular beam epitaxy

Journal of crystal growth, 1993-02, Vol.127 (1-4), p.217-220

1993

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Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers

Applied physics letters, 1996-06, Vol.68 (24), p.3383-3385

1996

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Molecular simulations for the conformational assessment of a porphyrin-fullerene dyad in different environments

Physical chemistry chemical physics : PCCP, 2005-09, Vol.7 (17), p.3126-3131

2005

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High interface recombination velocity caused by spatially indirect quantum well transition in Al0.55In0.45As/InP heteroface solar cells

Journal of applied physics, 1995-05, Vol.77 (9), p.4801-4803

1995

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Large area GaInAsP solar cells grown by gas-source MBE on GaAs substrates

IEEE transactions on electron devices, 1995-09, Vol.42 (9), p.1700-1703

1995

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Temperature dependency of the composition of GaInAsP grown by GSMBE

Journal of crystal growth, 1992-05, Vol.120 (1), p.145-149

1992

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The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

Journal of crystal growth, 1991-05, Vol.112 (1), p.27-32

1991

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Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

Journal of crystal growth, 1990-10, Vol.105 (1), p.101-105

1990

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Large area GaInAsP and GaInP solar cells for space applications

Physica scripta, 1994-01, Vol.1994, p.172-174

1994

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Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods

Applied physics letters, 1990-11, Vol.57 (22), p.2313-2314

1990

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Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE

Journal of crystal growth, 1992-05, Vol.120 (1-4), p.172-176

1992

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The substrate—epitaxial interface of GaAs and InP grown by GSMBE

Journal of crystal growth, 1991, Vol.107 (1), p.1070-1071

1991

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Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-y with x ~ 0.15 and y ~ 0.33

Journal of crystal growth, 1992-09, Vol.123 (1-2), p.133-140

TAPPURA, K

1992

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Printed environmentally friendly supercapacitors with ionic liquid electrolytes on paper

Computational modeling of charge dissipation of fabrics containing conductive fibers

Nanomechanical force measurements of gliadin protein interactions

Influence of Substrate on Plasmon-Induced Absorption Enhancements

Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy

A new soft-core potential function for molecular dynamics applied to the prediction of protein loop conformations

Influence of rotational energy barriers to the conformational search of protein loops in molecular dynamics and ranking the conformations

Fluorimetric Oxygen Sensor for In Vitro Cell Models

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

A comparative evaluation of molecular recognition by monolayers composed of synthetic receptors or oriented antibodies

GaInAsP gas-source MBE technology

Unstable regions in the growth of GaInAsP by gas-source molecular beam epitaxy

Growth of Ga0.29In0.71As0.61P0.39 (λ ~ 1.3 μm) on InP by gas source molecular beam epitaxy

Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers

Molecular simulations for the conformational assessment of a porphyrin-fullerene dyad in different environments

High interface recombination velocity caused by spatially indirect quantum well transition in Al0.55In0.45As/InP heteroface solar cells

Large area GaInAsP solar cells grown by gas-source MBE on GaAs substrates

Temperature dependency of the composition of GaInAsP grown by GSMBE

The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy

Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy

Large area GaInAsP and GaInP solar cells for space applications

Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods

Low dark current In0.53Ga0.47As/InP SAM avalanche photodiodes grown by gas-source MBE

The substrate—epitaxial interface of GaAs and InP grown by GSMBE

Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-y with x ~ 0.15 and y ~ 0.33

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