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High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

Applied physics letters, 2015-07, Vol.107 (2)

2015

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Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Applied physics letters, 2020-09, Vol.117 (10)

2020

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Growth and applications of GeSn-related group-IV semiconductor materials

Science and technology of advanced materials, 2015-08, Vol.16 (4), p.043502-43523

2015

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Large grain growth of Ge-rich Ge1−xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Applied physics letters, 2014-02, Vol.104 (6)

2014

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Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Applied physics letters, 2020-12, Vol.117 (24)

2020

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Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

Applied physics letters, 2020-06, Vol.116 (22)

2020

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Effects of Cl passivation on Al2O3/GaN interface properties

Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1002

2023

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Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

Applied physics letters, 2015-04, Vol.106 (17)

2015

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Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties

Applied physics letters, 2016-10, Vol.109 (18)

2016

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Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SG), p.SG1007

2023

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Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs

Japanese Journal of Applied Physics, 2022-02, Vol.61 (2), p.21007

2022

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Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SH), p.SH1012

2022

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Evaluation of chemical structure and Si segregation of Al/Si(111)

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1059

2023

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Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface

Scientific reports, 2018-01, Vol.8 (1), p.1391-10, Article 1391

2018

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Segregation control for ultrathin Ge layer in Al/Ge(111) system

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA1014

2022

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Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBK05

2021

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Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Applied physics letters, 2015-02, Vol.106 (6)

2015

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Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.610-615, Article 2021FUP0006

2022

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Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.616-621, Article 2021FUP0007

2022

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Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer

Japanese Journal of Applied Physics, 2019-02, Vol.58 (SA)

2019

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Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S)

2018

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Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts

Thin solid films, 2014-04, Vol.557, p.84-89

2014

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Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Applied physics letters, 2015-05, Vol.106 (18)

2015

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Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

Applied physics letters, 2015-09, Vol.107 (10)

2015

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High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Growth and applications of GeSn-related group-IV semiconductor materials

Large grain growth of Ge-rich Ge1−xSnx (x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

Effects of Cl passivation on Al2O3/GaN interface properties

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers

Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties

Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs

Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure

Evaluation of chemical structure and Si segregation of Al/Si(111)

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface

Segregation control for ultrathin Ge layer in Al/Ge(111) system

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures

Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots

Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts

Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures

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