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Reactively Sputtered W‐N Films as Diffusion Barriers in GaAs Metallizations

Journal of the Electrochemical Society, 1987-07, Vol.134 (7), p.1759-1763

1987

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Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor Deposition

Journal of the Electrochemical Society, 1985-03, Vol.132 (3), p.662-668

1985

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Bias-induced stress transitions in sputtered TiN films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1986-07, Vol.4 (4), p.1850-1854

1986

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Tantalum‐Based Encapsulants For Thermal Annealing of GaAs

Journal of the Electrochemical Society, 1991-03, Vol.138 (3), p.834-837

1991

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Silicon implantation in GaAs

Applied physics letters, 1979-01, Vol.34 (2), p.165-167

1979

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Sequential nature of damage annealing and activation in implanted GaAs

Applied physics letters, 1989-01, Vol.54 (5), p.448-450

1989

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Characterization of reacted ohmic contacts to GaAs

Solid-state electronics, 1986-09, Vol.29 (9), p.903-905

1986

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Interfacial strain in AlxGa1-xAs layers on GaAS

Journal of applied physics, 1985, Vol.57 (4), p.1377-1379

1985

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Stable solid-phase contact to n-GaAs

IEEE transactions on electron devices, 1989-06, Vol.36 (6), p.1223-1225

1989

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Study of solid-phase reactions of metals on GaAs with a TiN diffusion barrier

Solid-state electronics, 1987-06, Vol.30 (6), p.571-578

1987

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Pulsed electron beam induced recrystallization and damage in GaAs

Applied physics letters, 1979-12, Vol.35 (11), p.867-870

1979

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Steady-state thermally annealed GaAs with room-temperature-implanted Si

Applied physics letters, 1980-05, Vol.36 (9), p.749-751

1980

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Reliability of pulsed electron-beam-alloyed AuGe/Pt ohmic contacts on GaAs

Applied physics letters, 1981-10, Vol.39 (7), p.556-558

1981

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Alloying behaviour of Au-Ge/Pt ohmic contacts to GaAs by pulsed electron beam and furnace heating

Electronics letters, 1980-10, Vol.16 (22), p.849

1980

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Pulsed-laser annealing of implanted layers in GaAs

Applied physics letters, 1979-05, Vol.34 (9), p.597-599

1979

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Excess noise measurements in ion-implanted silicon resistors

Solid-state electronics, 1974-01, Vol.17 (6), p.599-605

1974

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Stable silicon solar cells with high temperature survivability

Solar cells, 1987-04, Vol.20 (3), p.177-186

1987

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Activation analysis of rapid thermally annealed Si and Mg implanted semi‐insulating GaAs

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-09, Vol.7 (5), p.1090-1095

1989

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TA-A3 laser and electron-beam annealing of implanted semi-insulating GaAs

IEEE transactions on electron devices, 1979-11, Vol.26 (11), p.1833-1833

1979

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Effect of encapsulation on the reaction between palladium and GaAs thin films

Thin solid films, 1988-12, Vol.166 (1-2), p.63-68

1988

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Combined use of ion backscattering and X-ray rocking curves in the analyses of superlattices

Physical review. B, Condensed matter, 1985-02, Vol.31 (4), p.2343-2347

1985

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Analyses of implanted superlattices by ion backscattering and X-ray rocking curves

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1985-01, Vol.10, p.588-591

1985

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Saturation of Si activation at high doping levels in GaAs

The Journal of physics and chemistry of solids, 1983, Vol.44 (6), p.507-514

1983

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Stable ohmic contact to GaAs with TiN diffusion barrier

Thin solid films, 1984-01, Vol.119 (1), p.5-9

1984

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1/ f noise as a nonstationary process: Experimental evidence and some analytical conditions

Journal of applied physics, 1976-01, Vol.47 (4), p.1697-1701

1976

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Reactively Sputtered W‐N Films as Diffusion Barriers in GaAs Metallizations

Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor Deposition

Bias-induced stress transitions in sputtered TiN films

Tantalum‐Based Encapsulants For Thermal Annealing of GaAs

Silicon implantation in GaAs

Sequential nature of damage annealing and activation in implanted GaAs

Characterization of reacted ohmic contacts to GaAs

Interfacial strain in AlxGa1-xAs layers on GaAS

Stable solid-phase contact to n-GaAs

Study of solid-phase reactions of metals on GaAs with a TiN diffusion barrier

Pulsed electron beam induced recrystallization and damage in GaAs

Steady-state thermally annealed GaAs with room-temperature-implanted Si

Reliability of pulsed electron-beam-alloyed AuGe/Pt ohmic contacts on GaAs

Alloying behaviour of Au-Ge/Pt ohmic contacts to GaAs by pulsed electron beam and furnace heating

Pulsed-laser annealing of implanted layers in GaAs

Excess noise measurements in ion-implanted silicon resistors

Stable silicon solar cells with high temperature survivability

Activation analysis of rapid thermally annealed Si and Mg implanted semi‐insulating GaAs

TA-A3 laser and electron-beam annealing of implanted semi-insulating GaAs

Effect of encapsulation on the reaction between palladium and GaAs thin films

Combined use of ion backscattering and X-ray rocking curves in the analyses of superlattices

Analyses of implanted superlattices by ion backscattering and X-ray rocking curves

Saturation of Si activation at high doping levels in GaAs

Stable ohmic contact to GaAs with TiN diffusion barrier

1/ f noise as a nonstationary process: Experimental evidence and some analytical conditions

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