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Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

Applied physics letters, 2020-06, Vol.116 (24)

2020

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Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits

Optics express, 2016-05, Vol.24 (11), p.11855

2016

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On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

Applied physics. A, Materials science & processing, 2022-12, Vol.128 (12), Article 1114

2022

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Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition

Applied physics letters, 2021-06, Vol.118 (23)

2021

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Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

Nature photonics, 2017-08, Vol.11 (8), p.486-490

2017

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Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

IEEE electron device letters, 2020-10, Vol.41 (10), p.1588-1591

2020

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InP-based photonic integrated circuit platform on SiC wafer

Optics express, 2017-11, Vol.25 (24), p.29993-30000

2017

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ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

Journal of applied physics, 2019-05, Vol.125 (19)

2019

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Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film

Applied physics letters, 2024-08, Vol.125 (7)

2024

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Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network

ACS photonics, 2022-08, Vol.9 (8), p.2614-2622

2022

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High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform

Optics express, 2019-03, Vol.27 (5), p.6451-6458

2019

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High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

Communications materials, 2020-12, Vol.1 (1), p.1-9, Article 103

2020

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Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

Optics express, 2022-06, Vol.30 (13), p.23318-23329

2022

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Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

Applied physics letters, 2019-02, Vol.114 (6)

2019

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InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Journal of applied physics, 2019-03, Vol.125 (11)

2019

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Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Journal of applied physics, 2020-05, Vol.127 (18)

2020

Volltextzugriff (PDF)

Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors

Journal of applied physics, 2017-11, Vol.122 (17)

2017

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Diffusion properties of n-type dopants diffused from spin on glass into Ge

Journal of applied physics, 2020-07, Vol.128 (1)

2020

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Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4067-4072

2020

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Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley-Robust to Surface Roughness Scattering

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2115-2121

2022

Volltextzugriff (PDF)

Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5060-5064

2019

Volltextzugriff (PDF)

Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S2

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2106-2112

2023

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Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Journal of applied physics, 2020-06, Vol.127 (22)

2020

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Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Journal of applied physics, 2009-10, Vol.106 (7)

2009

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Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied physics letters, 2018-08, Vol.113 (6)

2018

Volltextzugriff (PDF)

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Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits

On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability

Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition

Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

InP-based photonic integrated circuit platform on SiC wafer

ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film

Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network

High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform

High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing

Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors

Diffusion properties of n-type dopants diffused from spin on glass into Ge

Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley-Robust to Surface Roughness Scattering

Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process

Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S2

Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors

Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

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