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Measurement of temperature and its gradient in melt and crystal in bulk crystal growth

Journal of the Japanese Association for Crystal Growth, 2020, Vol.47(2), pp.47-2-01

Taishi, Toshinori

2020

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The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC

Japanese Journal of Applied Physics, 2020-02, Vol.59 (2), p.25504

2020

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Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth

Applied surface science, 2020-05, Vol.513, p.145798, Article 145798

2020

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Fabrication of flower-shaped Bi2O3 superstructure by a facile template-free process

Applied surface science, 2011-05, Vol.257 (15), p.6577-6582

2011

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Dopant Effect on Lithiation/Delithiation of Highly Crystalline Silicon Synthesized Using the Czochralski Process

ACS applied energy materials, 2021-08, Vol.4 (8), p.7922-7929

2021

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Introduction of special issue for temperature field and temperature gradient in bulk crystal growth from melt

Journal of the Japanese Association for Crystal Growth, 2020, Vol.47(2), pp.47-2-00

2020

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Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 1. Temperature measurements

Journal of crystal growth, 2024-06, Vol.636, p.127704, Article 127704

2024

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Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 2. Numerical simulations and comparison with measurements

Journal of crystal growth, 2024-06, Vol.636, p.127703, Article 127703

2024

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Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Journal of crystal growth, 2014-05, Vol.393, p.42-44

2014

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Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation

Journal of crystal growth, 2014-09, Vol.402, p.83-89

2014

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Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si

Materials science forum, 2018-06, Vol.924, p.35-38

2018

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Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method

Journal of crystal growth, 2013-06, Vol.372, p.95-99

2013

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The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed

Journal of crystal growth, 2015-10, Vol.427, p.16-20

2015

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Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC

Materials science forum, 2018-06, Vol.924, p.43-46

2018

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Temperature gradient in oxide and compound semiconductor bulk crystal growth

Journal of the Japanese Association for Crystal Growth, 2020, Vol.47(2), pp.47-2-05

2020

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Impurity effects on the generation and velocity of dislocations in Ge

Journal of applied physics, 2011-06, Vol.109 (11), p.113502-113502-5

2011

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Anisotropy of ionic conduction in single-crystal LixLa(1−x)/3NbO3 solid electrolyte grown by directional solidification

Japanese Journal of Applied Physics, 2016-09, Vol.55 (9)

2016

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Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes

Applied surface science, 2011, Vol.257 (6), p.1845-1849

2011

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Influence of Ge composition in the Cu2Sn1−Ge S3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor

Solar energy materials and solar cells, 2015-09, Vol.140, p.312-319

2015

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Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method

Journal of crystal growth, 2021-02, Vol.556, p.125990, Article 125990

2021

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Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

Journal of crystal growth, 2009-11, Vol.311 (22), p.4615-4618

2009

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Growth of potassium tantalate (KTaO3) crystals by directional solidification

Journal of crystal growth, 2013-10, Vol.380, p.39-42

2013

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p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing

Journal of crystal growth, 2013-01, Vol.363, p.190-194

2013

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Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Journal of crystal growth, 2012-12, Vol.360, p.47-51

2012

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Evaluation of numerical simulation of constitutional supercooling during heavily Boron-Doped silicon crystal growth using Cz method

Journal of crystal growth, 2023-10, Vol.619, p.127333, Article 127333

2023

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Measurement of temperature and its gradient in melt and crystal in bulk crystal growth

The effect of Al addition to a Cr solvent without molten Si on the surface morphology in a solution growth of SiC

Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth

Fabrication of flower-shaped Bi2O3 superstructure by a facile template-free process

Dopant Effect on Lithiation/Delithiation of Highly Crystalline Silicon Synthesized Using the Czochralski Process

Introduction of special issue for temperature field and temperature gradient in bulk crystal growth from melt

Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 1. Temperature measurements

Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 2. Numerical simulations and comparison with measurements

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation

Effect of the Growth Conditions on the Crystal Quality in Solution Growth of SiC Using Cr Solvent without Molten Si

Demonstration of crack-free c-axis sapphire crystal growth using the vertical Bridgman method

The growth of Al2O3/YAG:Ce melt growth composite by the vertical Bridgman technique using an a-axis Al2O3 seed

Experimental Determination of Carbon Solubility in Si0.56Cr0.4M0.04 (M = Transition Metal) Solvents for Solution Growth of SiC

Temperature gradient in oxide and compound semiconductor bulk crystal growth

Impurity effects on the generation and velocity of dislocations in Ge

Anisotropy of ionic conduction in single-crystal LixLa(1−x)/3NbO3 solid electrolyte grown by directional solidification

Mild hydrothermal treatment to prepare highly dispersed multi-walled carbon nanotubes

Influence of Ge composition in the Cu2Sn1−Ge S3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor

Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

Growth of potassium tantalate (KTaO3) crystals by directional solidification

p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Evaluation of numerical simulation of constitutional supercooling during heavily Boron-Doped silicon crystal growth using Cz method

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