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Picosecond spin relaxation in low-temperature-grown GaAs

Applied physics letters, 2014-03, Vol.104 (12)

2014

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Observation of optical anisotropy of highly uniform InAs quantum dots

Journal of crystal growth, 2013-09, Vol.378, p.463-465

2013

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Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Spin relaxation dynamics in highly uniform InAs quantum dots

Applied physics letters, 2004-05, Vol.84 (18), p.3576-3578

2004

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Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

Applied physics letters, 2001-12, Vol.79 (26), p.4319-4321

2001

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Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells

Applied physics letters, 2012-02, Vol.100 (9)

2012

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Subpicosecond exciton spin relaxation in GaN

Applied physics letters, 2004-10, Vol.85 (15), p.3116-3118

2004

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Localized and free exciton spin relaxation dynamics in GaInNAs∕GaAs quantum well

Applied physics letters, 2008-02, Vol.92 (5)

2008

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Exciton Localization in Vertically and Laterally Coupled GaN/AlN Quantum Dots

Nano letters, 2005-02, Vol.5 (2), p.213-217

2005

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Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

AIP conference proceedings, 2011-01, Vol.1399 (1)

2011

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Energy relaxation time of hot carriers photoexcited in InGaN

Physica status solidi. C, 2008-01, Vol.5 (1), p.143-145

2008

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Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Physical review. B, Condensed matter, 2002-10, Vol.66 (15), Article 153305

2002

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Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots

Physica status solidi. C, 2008-01, Vol.5 (1), p.378-381

2008

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Ultrafast all-optical spin polarization switch using quantum-well etalon

IEEE journal of selected topics in quantum electronics, 1996-09, Vol.2 (3), p.661-667

1996

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Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells

Journal of applied physics, 2002-09, Vol.92 (6), p.3071-3074

2002

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Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - effect of exciton and free carrier thermodynamic

Physica status solidi. C, 2008-01, Vol.5 (1), p.78-81

2008

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Spin relaxation and antiferromagnetic coupling in semiconductor quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.354-358

2006

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A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure

Applied physics letters, 2000-01, Vol.76 (4), p.454-456

2000

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Size dependence of carrier recombination efficiency in GaN quantum dots

IEEE transactions on nanotechnology, 2005-03, Vol.4 (2), p.297-299

2005

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Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells

Physica status solidi. C, 2008-01, Vol.5 (1), p.356-359

2008

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Band gap bowing and exciton localization in strained cubic InxGa1−xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

Applied physics letters, 2001-11, Vol.79 (22), p.3600-3602

2001

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Antiferromagnetic coupling between semiconductor quantum dots

Physica. B, Condensed matter, 2002-03, Vol.314 (1), p.25-29

2002

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Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

IEEE transactions on nanotechnology, 2003-03, Vol.2 (1), p.10-14

2003

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Exciton spin dynamics in GaAs quantum wells

Journal of luminescence, 1997-06, Vol.72, p.307-308

1997

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Exciton spin relaxation in In 0.53 Ga 0.47 As/AlAs 0.56 Sb 0.44 quantum wells

Applied physics letters, 2012-02, Vol.100 (9), p.092401-092401-3

2012

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Picosecond spin relaxation in low-temperature-grown GaAs

Observation of optical anisotropy of highly uniform InAs quantum dots

Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

Spin relaxation dynamics in highly uniform InAs quantum dots

Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells

Subpicosecond exciton spin relaxation in GaN

Localized and free exciton spin relaxation dynamics in GaInNAs∕GaAs quantum well

Exciton Localization in Vertically and Laterally Coupled GaN/AlN Quantum Dots

Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

Energy relaxation time of hot carriers photoexcited in InGaN

Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots

Ultrafast all-optical spin polarization switch using quantum-well etalon

Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells

Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - effect of exciton and free carrier thermodynamic

Spin relaxation and antiferromagnetic coupling in semiconductor quantum dots

A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure

Size dependence of carrier recombination efficiency in GaN quantum dots

Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells

Band gap bowing and exciton localization in strained cubic InxGa1−xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

Antiferromagnetic coupling between semiconductor quantum dots

Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Exciton spin dynamics in GaAs quantum wells

Exciton spin relaxation in In 0.53 Ga 0.47 As/AlAs 0.56 Sb 0.44 quantum wells

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