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Advances and Trends in Artificial Intelligence. Theory and Practices in Artificial Intelligence, p.583-593

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Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

Applied physics letters, 2007-03, Vol.90 (13), p.131107-131107-3

2007

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Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching

Journal of crystal growth, 2007, Vol.298, p.699-702

2007

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Optical property of In0.2Ga0.8As/GaAs strained multiple quantum-wells grown by using MOCVD

Journal of crystal growth, 2004-07, Vol.268 (1-2), p.59-63

2004

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The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD

Journal of crystal growth, 2004-10, Vol.270 (3-4), p.340-345

2004

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Effect of interlayer on optical properties of InGaAsN/GaAs quantum well grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2004-11, Vol.271 (3), p.348-352

2004

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Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers

Physica status solidi. A, Applied research, 2004-09, Vol.201 (12), p.2799-2802

2004

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Photocurrent measurements on GaAs1-xNx epilayers grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2004-01, Vol.260 (3-4), p.336-342

2004

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Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well

Journal of crystal growth, 2004-07, Vol.267 (3), p.412-416

2004

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Effect of Annealing on InGaN/GaN Multiple Quantum Wells

Journal of the Korean Physical Society, 2005, 47(3), , pp.871-875

2005

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Influence of Sb doping on In0.2Ga0.8As0.98N0.02/GaAs strained multiquantum wells grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2004-03, Vol.263 (1-4), p.156-160

2004

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Composition dependence of band gap energy of GaAsN alloys

Journal of the Korean Physical Society, 2003, 43(2), , pp.273-276

2003

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Calculation of the external quantum efficiency of light emitting diodes with different chip designs

Physica status solidi. C, 2004-09, Vol.1 (10), p.2433-2437

2004

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Influence of Ga Source on Nitrogen Incorporation of Ga(In)AsN/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Journal of the Korean Physical Society, 2003, 42(III), , pp.514-517

2003

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Improved Thermal Stability of Green InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes with an AlGaN/GaN Short-Superlattice-Inserted Structure

Journal of the Korean Physical Society, 2009, 54(1), , pp.140-144

2009

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Influence of Sb surfactant on the structural and optical properties of InGaAsN/GaAs multi-quantum wells grown by metalorganic chemical vapor deposition

Physica status solidi. C, 2003-12 (7), p.2761-2764

2003

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THERMAL CHARACTERIZATIONS OF POLYMER COMPOSITE MATERIALS POLYURETHANE FOAM-CHITIN

ChemChemTech, 2023-01, Vol.66 (6), p.111-122

2023

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Growth of periodic micropits InGaN-based LED structure on wet-etch patterned sapphire substrate

Physica status solidi. C, 2008-05, Vol.5 (6), p.2001-2003

2008

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Comparison of InxGa1-xN/GaN MQWs Grown on GaN and Sapphire Substrates

Journal of the Korean Physical Society, 2006, 49(5I), , pp.2001-2005

2006

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Improved GaN-Based LED Light Extraction Efficiencies via Selective MOCVD Using Peripheral Microhole Arrays

IEEE photonics technology letters, 2008-08, Vol.20 (15), p.1284-1286

2008

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The Influence of Well and Barrier Conditions on InGaAsN/GaAs Multiple Quantum Wells Grown by Using MOCVD

Journal of the Korean Physical Society, 2003, 43(6), , pp.1096-1100

2003

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Enhanced Light Extraction Efficiency of GaN-Based LED with ZnO Nanorod Grown on Ga-Doped ZnO Seed Layer

ECS solid state letters, 2013-01, Vol.2 (6), p.Q43-Q46

2013

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Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well

Journal of crystal growth, 2004-05, Vol.267 (3-4), p.412-416

2004

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Photocurrent and Photoluminescence Measurements on In0.2Ga0.8As0.98N0.02/GaAs Strained Multi-Quantum Wells Grown by Using Metalorganic Chemical Vapor Deposition

Journal of the Korean Physical Society, 2003-11, Vol.43 (5), p.758-761

2003

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Photocurrent and photoluminescence measurements on InGaAsN/GaAs strained multiquantum well grown by metalorganic chemical vapor deposition

Journal of the Korean Physical Society, 2003, 43(51), , pp.758-761

2003

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Multi-class Sentiment Classification for Customers’ Reviews

Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching

Optical property of In0.2Ga0.8As/GaAs strained multiple quantum-wells grown by using MOCVD

The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD

Effect of interlayer on optical properties of InGaAsN/GaAs quantum well grown by metalorganic chemical vapor deposition

Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers

Photocurrent measurements on GaAs1-xNx epilayers grown by metalorganic chemical vapor deposition

Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well

Effect of Annealing on InGaN/GaN Multiple Quantum Wells

Influence of Sb doping on In0.2Ga0.8As0.98N0.02/GaAs strained multiquantum wells grown by metalorganic chemical vapor deposition

Composition dependence of band gap energy of GaAsN alloys

Calculation of the external quantum efficiency of light emitting diodes with different chip designs

Influence of Ga Source on Nitrogen Incorporation of Ga(In)AsN/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Improved Thermal Stability of Green InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes with an AlGaN/GaN Short-Superlattice-Inserted Structure

Influence of Sb surfactant on the structural and optical properties of InGaAsN/GaAs multi-quantum wells grown by metalorganic chemical vapor deposition

THERMAL CHARACTERIZATIONS OF POLYMER COMPOSITE MATERIALS POLYURETHANE FOAM-CHITIN

Growth of periodic micropits InGaN-based LED structure on wet-etch patterned sapphire substrate

Comparison of InxGa1-xN/GaN MQWs Grown on GaN and Sapphire Substrates

Improved GaN-Based LED Light Extraction Efficiencies via Selective MOCVD Using Peripheral Microhole Arrays

The Influence of Well and Barrier Conditions on InGaAsN/GaAs Multiple Quantum Wells Grown by Using MOCVD

Enhanced Light Extraction Efficiency of GaN-Based LED with ZnO Nanorod Grown on Ga-Doped ZnO Seed Layer

Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well

Photocurrent and Photoluminescence Measurements on In0.2Ga0.8As0.98N0.02/GaAs Strained Multi-Quantum Wells Grown by Using Metalorganic Chemical Vapor Deposition

Photocurrent and photoluminescence measurements on InGaAsN/GaAs strained multiquantum well grown by metalorganic chemical vapor deposition

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