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Drug-related problem characterization and the solved status associated factor analysis in a pharmacist-managed anticoagulation clinic

PloS one, 2022-08, Vol.17 (8), p.e0270263-e0270263

2022

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A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method-Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type Devices

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2218-2228

2008

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BeautyGlow: On-Demand Makeup Transfer Framework With Reversible Generative Network

2019 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR), 2019, p.10034-10042

2019

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A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

2010 Symposium on VLSI Technology, 2010, p.131-132

2010

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A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2229-2237

2008

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Pharmacological development of the potential adjuvant therapeutic agents against coronavirus disease 2019

Journal of the Chinese Medical Association, 2020-09, Vol.83 (9), p.817-821

2020

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A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2202-2211

2008

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The oxidative metabolism of dimemorfan by human cytochrome P450 enzymes

Journal of pharmaceutical sciences, 2010-02, Vol.99 (2), p.1063-1077

2010

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The pharmacological development of direct acting agents for emerging needed therapy against severe acute respiratory syndrome coronavirus-2

Journal of the Chinese Medical Association, 2020-08, Vol.83 (8), p.712-718

2020

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Pulse- IV Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide

IEEE electron device letters, 2009-04, Vol.30 (4), p.380-382

2009

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study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash

2008 IEEE International Reliability Physics Symposium, 2008, p.693-694

2008

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Beamforming designs for multiuser transmissions in FDD massive MIMO systems using partial CSIT

2016 IEEE Sensor Array and Multichannel Signal Processing Workshop (SAM), 2016, p.1-5

2016

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Mechanisms and solutions to gate oxide degradation in flash memory by tunnel-oxide nitridation engineering

IEEE electron device letters, 2005-06, Vol.26 (6), p.363-365

2005

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Applying Dielectrophoresis on Silver Nanowires Alignment and Assembly to Enhance the Efficiency of Plasmonic Silicon Solar Cells

International journal of electrochemical science, 2015-09, Vol.10 (9), p.7192-7199

2015

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Understanding barrier engineered charge-trapping NAND flash devices with and without high-K dielectric

2009 IEEE International Reliability Physics Symposium, 2009, p.874-882

2009

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A high-endurance (≫100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface

2010 IEEE International Reliability Physics Symposium, 2010, p.951-955

2010

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A Novel Gate-Injection Program/Erase P-Channel NAND-Type Flash Memory with High (10M Cycle) Endurance

2007 IEEE Symposium on VLSI Technology, 2007, p.140-141

2007

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P2PVR: A playback offset aware multicast tree for on-demand video streaming with VCR functions

Journal of systems architecture, 2011-04, Vol.57 (4), p.392-403

2011

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A Novel Gate-Sensing and Channel-Sensing Transient Analysis Method for Real-Time Monitoring of Charge Vertical Location in Sonos-Type Devices and its Applications in Reliability Studies

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.177-183

2007

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Chip-level reliability study of barrier engineered (BE) floating gate (FG) Flash memory devices

2010 IEEE International Reliability Physics Symposium, 2010, p.627-633

2010

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Reliability and Processing Effects of Bandgap Engineered SONOS (BE-SONOS) Flash Memory

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.171-176

2007

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Reliability study of MANOS with and without a SiO2 buffer layer and BE-MANOS charge-trapping NAND flash devices

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009, p.152-153

2009

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A study of SONOS charge loss mechanism after hot-hole stressing using trap-layer engineering and electrical re-fill methods

2008 IEEE International Reliability Physics Symposium, 2008, p.695-696

2008

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A highly scalable vertical gate (VG) 3D NAND Flash with robust program disturb immunity using a novel PN diode decoding structure

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.68-69

2011

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Effect of fabrication process on the charge trapping behavior of SiON thin films

Solid-state electronics, 2006-07, Vol.50 (7-8), p.1171-1174

2006

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Drug-related problem characterization and the solved status associated factor analysis in a pharmacist-managed anticoagulation clinic

A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method-Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type Devices

BeautyGlow: On-Demand Makeup Transfer Framework With Reversible Generative Network

A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices

Pharmacological development of the potential adjuvant therapeutic agents against coronavirus disease 2019

A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion Barrier

The oxidative metabolism of dimemorfan by human cytochrome P450 enzymes

The pharmacological development of direct acting agents for emerging needed therapy against severe acute respiratory syndrome coronavirus-2

Pulse- IV Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide

study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash

Beamforming designs for multiuser transmissions in FDD massive MIMO systems using partial CSIT

Mechanisms and solutions to gate oxide degradation in flash memory by tunnel-oxide nitridation engineering

Applying Dielectrophoresis on Silver Nanowires Alignment and Assembly to Enhance the Efficiency of Plasmonic Silicon Solar Cells

Understanding barrier engineered charge-trapping NAND flash devices with and without high-K dielectric

A high-endurance (≫100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface

A Novel Gate-Injection Program/Erase P-Channel NAND-Type Flash Memory with High (10M Cycle) Endurance

P2PVR: A playback offset aware multicast tree for on-demand video streaming with VCR functions

A Novel Gate-Sensing and Channel-Sensing Transient Analysis Method for Real-Time Monitoring of Charge Vertical Location in Sonos-Type Devices and its Applications in Reliability Studies

Chip-level reliability study of barrier engineered (BE) floating gate (FG) Flash memory devices

Reliability and Processing Effects of Bandgap Engineered SONOS (BE-SONOS) Flash Memory

Reliability study of MANOS with and without a SiO2 buffer layer and BE-MANOS charge-trapping NAND flash devices

A study of SONOS charge loss mechanism after hot-hole stressing using trap-layer engineering and electrical re-fill methods

A highly scalable vertical gate (VG) 3D NAND Flash with robust program disturb immunity using a novel PN diode decoding structure

Effect of fabrication process on the charge trapping behavior of SiON thin films

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