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Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing

Journal of applied physics, 2019-01, Vol.125 (2)

2019

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Calculation of interface roughness scattering-limited vertical and horizontal mobilities in InAs/GaSb superlattices as a function of temperature

Journal of applied physics, 2013-01, Vol.113 (1)

2013

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Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices

Journal of applied physics, 2016-10, Vol.120 (14)

2016

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Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices

Journal of crystal growth, 2016-02, Vol.436, p.134-137

2016

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Comment on “A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb superlattices” [J. Appl. Phys. 114 , 053712 (2013)]

Journal of applied physics, 2014-04, Vol.115 (14)

Szmulowicz, F.

2014

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Envelope-function theory without spurious real solutions

Europhysics letters, 2005-01, Vol.69 (2), p.249-255

Szmulowicz, F

2005

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Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection

Journal of applied physics, 2004-09, Vol.96 (5), p.2580-2585

2004

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Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices

Journal of applied physics, 2007-02, Vol.101 (4)

2007

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Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors

Applied physics letters, 2005-12, Vol.87 (26)

2005

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Optimization of mid-infrared InAs∕GaSb type-II superlattices

Applied physics letters, 2004-06, Vol.84 (26), p.5410-5412

2004

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GaSb for passivating type-II InAs/GaSb superlattice mesas

Infrared physics & technology, 2010-09, Vol.53 (5), p.305-307

2010

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Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors

Journal of crystal growth, 2009-03, Vol.311 (7), p.1897-1900

2009

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Calculation of vertical and horizontal mobilities in InAs/GaSb superlattices

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (15), Article 155307

2011

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Calculation of the vertical and horizontal electron mobilities in InAs/GaSb superlattices

Applied physics letters, 2011-05, Vol.98 (18), p.182105-182105-3

2011

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InAs/GaSb type-II superlattices for high performance mid-infrared detectors

Journal of crystal growth, 2005-05, Vol.278 (1), p.198-202

2005

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Effect of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-function approximation

Physical review. B, Condensed matter and materials physics, 2004-04, Vol.69 (15), Article 155321

2004

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Tangent formulation of the Kronig-Penney problem for N -period layered systems with application to photonic crystals

Physical review. B, Condensed matter and materials physics, 2005-12, Vol.72 (23), Article 235103

Szmulowicz, Frank

2005

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Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Opto-electronics review, 2006-01, Vol.14 (1), p.69-75

2006

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New analytic and computational formalism for the band structure of N-layer photonic crystals

Physics letters. A, 2005-10, Vol.345 (4), p.469-477

Szmulowicz, Frank

2005

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Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

Applied physics letters, 2008-02, Vol.92 (7)

2008

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Resonant-cavity-enhanced p -type GaAs/AlGaAs quantum-well infrared photodetectors

Applied physics letters, 2000-10, Vol.77 (15), p.2400-2402

2000

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Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.289-292

2006

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Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing

Journal of applied physics, 2002-11, Vol.92 (10), p.5863-5871

2002

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Analytic, graphical, and geometric solutions for the band edges of one-dimensional photonic band gap materials

Journal of applied physics, 2004-11, Vol.96 (9), p.5376-5378

Szmulowicz, Frank

2004

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Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing

Calculation of interface roughness scattering-limited vertical and horizontal mobilities in InAs/GaSb superlattices as a function of temperature

Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices

Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices

Comment on “A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb superlattices” [J. Appl. Phys. 114 , 053712 (2013)]

Envelope-function theory without spurious real solutions

Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

Band gap tuning of InAs∕GaSb type-II superlattices for mid-infrared detection

Demonstration of interface-scattering-limited electron mobilities in InAs∕GaSb superlattices

Short-period InAs∕GaSb type-II superlattices for mid-infrared detectors

Optimization of mid-infrared InAs∕GaSb type-II superlattices

GaSb for passivating type-II InAs/GaSb superlattice mesas

Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors

Calculation of vertical and horizontal mobilities in InAs/GaSb superlattices

Calculation of the vertical and horizontal electron mobilities in InAs/GaSb superlattices

InAs/GaSb type-II superlattices for high performance mid-infrared detectors

Effect of interfaces and the spin-orbit band on the band gaps of InAs/GaSb superlattices beyond the standard envelope-function approximation

Tangent formulation of the Kronig-Penney problem for N -period layered systems with application to photonic crystals

Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

New analytic and computational formalism for the band structure of N-layer photonic crystals

Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

Resonant-cavity-enhanced p -type GaAs/AlGaAs quantum-well infrared photodetectors

Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing

Analytic, graphical, and geometric solutions for the band edges of one-dimensional photonic band gap materials

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