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In-situ thin film copper–copper thermocompression bonding for quantum cascade lasers

Journal of materials science. Materials in electronics, 2021-06, Vol.32 (11), p.15605-15614

2021

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High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-5

2022

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Monolithic High Contrast Grating Integrated with Metal: Infrared Electrode with Exceptionally High Conductivity and Transmission

Advanced functional materials, 2024-03, Vol.34 (11), p.n/a

2024

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Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

Physica status solidi. A, Applications and materials science, 2024-04

2024

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The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures

Materials science in semiconductor processing, 2021-06, Vol.127, p.105694, Article 105694

2021

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Fabrication of Ultralow‐Bevel Angle Mesa Structures for Vertical GaN Devices

Physica status solidi. A, Applications and materials science, 2024-04

2024

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Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs

Materials science in semiconductor processing, 2021-02, Vol.122, p.105450, Article 105450

2021

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A study of different metals employed in metal-metal waveguides for terahertz quantum cascade lasers

Journal of physics. D, Applied physics, 2016-07, Vol.49 (27), p.275102

2016

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Theoretical investigation of metal–metal waveguides for terahertz quantum-cascade lasers

Optical and quantum electronics, 2015-04, Vol.47 (4), p.843-849

2015

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Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.25-30

2006

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Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation

Materials science in semiconductor processing, 2018-02, Vol.74, p.88-97

2018

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Direct Au–Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers

Optical and quantum electronics, 2015-04, Vol.47 (4), p.893-899

2015

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Defect detection in semiconductor layers with built-in electric field with the use of cathodoluminescence

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2854-2857

2012

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Multimode instabilities in mid-infrared quantum cascade lasers

Photonics letters of Poland, 2013-01, Vol.5 (3)

2013

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Influence of Operating Conditions on Quantum Cascade Laser Temperature

Journal of electronic materials, 2010-06, Vol.39 (6), p.630-634

2010

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Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980 nm CW semiconductor lasers

Vacuum, 2008-06, Vol.82 (10), p.977-981

2008

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Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980nm CW semiconductor lasers

Vacuum, 2008-06, Vol.82 (10), p.977-981

2008

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Ion implantation for semiconductor lasers

2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2023, p.39-40

2023

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Room temperature AlGaAs/GaAs quantum cascade lasers

Photonics letters of Poland, 2011-01, Vol.3 (2)

Bugajski, Maciej

2011

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Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology

Vacuum, 2007-12, Vol.82 (4), p.383-388

2007

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The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes

Materials science in semiconductor processing, Article 108842

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Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures

Microelectronics, 2009-03, Vol.40 (3), p.565-569

2009

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AlGaAs/GaAs Terahertz Quantum Cascade Laser with Gold-Based Metal – Metal Waveguide

THz for CBRN and Explosives Detection and Diagnosis, p.145-149

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Electrical and optical characterisation of (λ∼9.4µm) GaAs-based quantum cascade lasers

2009 International Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009, p.71-72

2009

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In-situ thin film copper–copper thermocompression bonding for quantum cascade lasers

High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

Monolithic High Contrast Grating Integrated with Metal: Infrared Electrode with Exceptionally High Conductivity and Transmission

Predesigned perovskite crystal waveguides for room-temperature exciton-polariton condensation and edge lasing

Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures

Fabrication of Ultralow‐Bevel Angle Mesa Structures for Vertical GaN Devices

Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs

A study of different metals employed in metal-metal waveguides for terahertz quantum cascade lasers

Theoretical investigation of metal–metal waveguides for terahertz quantum-cascade lasers

Investigation of oval defects in (In)Ga(Al)As/GaAs heterostructures by spatially resolved photoluminescence and micro-cathodoluminescence

Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation

Direct Au–Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers

Defect detection in semiconductor layers with built-in electric field with the use of cathodoluminescence

Multimode instabilities in mid-infrared quantum cascade lasers

Influence of Operating Conditions on Quantum Cascade Laser Temperature

Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980 nm CW semiconductor lasers

Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980nm CW semiconductor lasers

Ion implantation for semiconductor lasers

Room temperature AlGaAs/GaAs quantum cascade lasers

Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology

The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes

Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures

AlGaAs/GaAs Terahertz Quantum Cascade Laser with Gold-Based Metal – Metal Waveguide

Electrical and optical characterisation of (λ∼9.4µm) GaAs-based quantum cascade lasers

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