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Contacts for High-Resistivity (Cd,Mn)Te Crystals

IEEE transactions on nuclear science, 2011-02, Vol.58 (1), p.347-353

2011

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Semi-insulating (Cd,Mn)Te:V crystals: Electrical contacts

Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1706-1713

2007

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(Cd,Mn)Te Crystal Plates for Radiation Detectors: Electrical Contacts and Surface Passivation

Journal of electronic materials, 2015-09, Vol.44 (9), p.3174-3179

2015

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Technology and Characterization of Single-Crystalline Substrates Made of ZnSe-Based Wide-Gap II-VI Semiconductor Compounds

Physica status solidi. B. Basic research, 2002-01, Vol.229 (1), p.189-192

2002

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The Fe2+/3+ donor level in CdTe

Journal of physics. Condensed matter, 1990-12, Vol.2 (49), p.9853-9859

Szadkowski, A J

1990

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Vapour Phase Growth of II-VI Semiconductor Compounds : Recent Progress of II-VI Compound Semicondcutor Materials : Compound(<Special Issue>Bulk Crystals for Human Activity in the New Millennium)

Journal of the Japanese Association for Crystal Growth, 2000/07/15, Vol.27(2), pp.63-64

2000

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Persistent photoconductivity in Cl-doped ZnTe

Physica status solidi. B. Basic research, 1996-02, Vol.193 (2), p.K15-K17

1996

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Hopping Conductivity in (Zn, Ni)Se Mixed Crystals

Physica status solidi. B. Basic research, 1993-10, Vol.179 (2), p.K67-K69

1993

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Semi-insulating and n-type substrates quality ZnSe and ZnSe1 − xSx (x < 0.15) produced by low temperature physical vapour transport

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-01, Vol.43 (1-3), p.108-111

1997

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Implications of the change in work function of chromium by the presence of hydrogen on the properties of electrical contact between chromium and hydrogenated amorphous silicon

Journal of applied physics, 1982-01, Vol.53 (1), p.557-558

1982

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Compound formation between amorphous silicon and chromium

Journal of applied physics, 1980-12, Vol.51 (12), p.6424-6425

1980

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Imperfection photoconductivity peak related to the Urbach's absorption edge in Cd1-xMnxTe and CdTe

Solid state communications, 1986-06, Vol.58 (9), p.621-623

1986

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Solid Solutions of the II-VI Compounds - Growth, Characterization and Applications: Proceedings of the E-MRS 2002 Fall Meeting, Symposium G, 14-18 October 2002, Zakopane, Poland

Journal of alloys and compounds, 2004, Vol.371

2004

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The Fe 2+/3+ donor level in CdTe

Journal of physics. Condensed matter, 1990-12, Vol.2 (49), p.9853-9859

Szadkowski, A J

1990

Volltextzugriff (PDF)

Compensation of p-type Cd1-xMnxTe by diffusion of Ag

Physica status solidi. A, Applied research, 1984, Vol.84 (2), p.K181-K184

1984

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Imperfection photoconductivity of Cd1-xMnxTe

Physica status solidi. A, Applied research, 1983, Vol.79 (2), p.K127-K129

1983

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Rupture of the common bile duct after blunt abdominal injury

Wiadomości lekarskie (1960), 1987-11, Vol.40 (21), p.1503

1987

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Imperfection Photoconductivity Peak Related to the Urbach's Absorption Edge in Cd sub 1--x Mn sub x Te and CdTe

Solid state communications, 1986-06, Vol.58 (9), p.621-623

1986

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Technique of making good electrical contacts to high resistivity (Cd,Mn) Te crystals

2008 IEEE Nuclear Science Symposium Conference Record, 2008, p.327-332

2008

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Compensation of p-Type Cd sub 1--x Mn sub x Te by Diffusion of Silver

Physica status solidi. A, Applied research, 1984-08, Vol.84 (2), p.K181-K184

1984

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Imperfection Photoconductivity (PC) of Cd sub 1--x Mn sub x Te

Physica status solidi. A, Applied research, 1983-10, Vol.79 (2), p.K127-K129

1983

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Compensation of p-Type Cd1−x Mnx Te by Diffusion of Ag

Physica status solidi. A, Applied research, 1984-08, Vol.84 (2), p.K181-K184

1984

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Imperfection Photoconductivity of Cd1−x Mnx Te

Physica status solidi. A, Applied research, 1983-10, Vol.79 (2), p.K127-K129

1983

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Photoneutralization of the Fe 3+ Centers in the ZnSe Crystals Heavily Doped with Iron

Acta physica Polonica, A, 1991-02, Vol.79 (2-3), p.337-340

1991

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PII: S0925-8388(03)01058-2

Journal of alloys and compounds, 2004-05, Vol.371 (1-2), p.1-1

2004

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Contacts for High-Resistivity (Cd,Mn)Te Crystals

Semi-insulating (Cd,Mn)Te:V crystals: Electrical contacts

(Cd,Mn)Te Crystal Plates for Radiation Detectors: Electrical Contacts and Surface Passivation

Technology and Characterization of Single-Crystalline Substrates Made of ZnSe-Based Wide-Gap II-VI Semiconductor Compounds

The Fe2+/3+ donor level in CdTe

Vapour Phase Growth of II-VI Semiconductor Compounds : Recent Progress of II-VI Compound Semicondcutor Materials : Compound(<Special Issue>Bulk Crystals for Human Activity in the New Millennium)

Persistent photoconductivity in Cl-doped ZnTe

Hopping Conductivity in (Zn, Ni)Se Mixed Crystals

Semi-insulating and n-type substrates quality ZnSe and ZnSe1 − xSx (x < 0.15) produced by low temperature physical vapour transport

Implications of the change in work function of chromium by the presence of hydrogen on the properties of electrical contact between chromium and hydrogenated amorphous silicon

Compound formation between amorphous silicon and chromium

Imperfection photoconductivity peak related to the Urbach's absorption edge in Cd1-xMnxTe and CdTe

Solid Solutions of the II-VI Compounds - Growth, Characterization and Applications: Proceedings of the E-MRS 2002 Fall Meeting, Symposium G, 14-18 October 2002, Zakopane, Poland

The Fe 2+/3+ donor level in CdTe

Compensation of p-type Cd1-xMnxTe by diffusion of Ag

Imperfection photoconductivity of Cd1-xMnxTe

Rupture of the common bile duct after blunt abdominal injury

Imperfection Photoconductivity Peak Related to the Urbach's Absorption Edge in Cd sub 1--x Mn sub x Te and CdTe

Technique of making good electrical contacts to high resistivity (Cd,Mn) Te crystals

Compensation of p-Type Cd sub 1--x Mn sub x Te by Diffusion of Silver

Imperfection Photoconductivity (PC) of Cd sub 1--x Mn sub x Te

Compensation of p-Type Cd1−x Mnx Te by Diffusion of Ag

Imperfection Photoconductivity of Cd1−x Mnx Te

Photoneutralization of the Fe 3+ Centers in the ZnSe Crystals Heavily Doped with Iron

PII: S0925-8388(03)01058-2

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