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On the case of the negative activation volumes of defects in solids

Physica. B, Condensed matter, 2009-05, Vol.404 (8), p.1394-1397

2009

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Electron irradiation induced defects in undoped and Te doped gallium phosphide

Solid state communications, 2008-02, Vol.145 (7), p.332-336

2008

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INFLUENCE OF LOW ENERGY alpha-PARTICLE FLUXES ON THE PHOTOCONDUCTIVITY OF GaAs

Reviews on advanced materials science, 2007-05, Vol.14 (2), p.183-186

2007

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BEHAVIOUR OF SEMI-INSULATING GaAs ENERGY LEVELS

Reviews on advanced materials science, 2009, Vol.22 (1-2), p.52-59

2009

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TEMPERATURE DEPENDENT MONOVACANCY PARAMETERS VERSUS DIVACANCIES IN ANALYZING DATA OF DEFECTS IN METALS

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2009-07, Vol.23 (18), p.2235-2241

2009

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On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices

Open journal of microphysics, 2011-08, Vol.1 (2), p.32-34

2011

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ERRATUM: TEMPERATURE DEPENDENT MONOVACANCY PARAMETERS VERSUS DIVACANCIES IN ANALYZING DATA OF DEFECTS IN METALS

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2009-10, Vol.23 (25), p.3053-3053

2009

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Room temperature persistent photoconductivity in GaP:S

Solid state communications, 1998, Vol.105 (2), p.77-79

1998

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Dependence of I-U Characteristics of GaAs MESFETs on Temperature and α-Particle Irradiation

Physica status solidi. A, Applied research, 1991-01, Vol.123 (1), p.K79-K82

1991

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Effect of α-Particle Irradiation on AlGaAs/GaAs Planar Photoconductive Detectors at Low Temperatures

Physica status solidi. A, Applied research, 1992-09, Vol.133 (1), p.K49-K52

1992

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On the case of the negative activation volumes of defects in solids

Electron irradiation induced defects in undoped and Te doped gallium phosphide

INFLUENCE OF LOW ENERGY alpha-PARTICLE FLUXES ON THE PHOTOCONDUCTIVITY OF GaAs

BEHAVIOUR OF SEMI-INSULATING GaAs ENERGY LEVELS

TEMPERATURE DEPENDENT MONOVACANCY PARAMETERS VERSUS DIVACANCIES IN ANALYZING DATA OF DEFECTS IN METALS

On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices

ERRATUM: TEMPERATURE DEPENDENT MONOVACANCY PARAMETERS VERSUS DIVACANCIES IN ANALYZING DATA OF DEFECTS IN METALS

Room temperature persistent photoconductivity in GaP:S

Dependence of I-U Characteristics of GaAs MESFETs on Temperature and α-Particle Irradiation

Effect of α-Particle Irradiation on AlGaAs/GaAs Planar Photoconductive Detectors at Low Temperatures

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