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Design techniques for low-voltage high-speed digital bipolar circuits

IEEE journal of solid-state circuits, 1994-03, Vol.29 (3), p.332-339

1994

Volltextzugriff (PDF)

Burst-mode compatible optical receiver with a large dynamic range

Journal of lightwave technology, 1990-12, Vol.8 (12), p.1897-1903

1990

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A high speed burst mode optoelectronic integrated circuit photoreceiver using InP/InGaAs HBT's

IEEE photonics technology letters, 1994-07, Vol.6 (7), p.817-818

1994

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High-speed, burst-mode, packet-capable optical receiver and instantaneous clock recovery for optical bus operation

Journal of lightwave technology, 1994-02, Vol.12 (2), p.325-331

1994

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A high performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications

IEEE transactions on electron devices, 1995-03, Vol.42 (3), p.513-522

1995

Volltextzugriff (PDF)

Survival of bacteria in seawater using a diffusion chamber apparatus in situ

Applied and Environmental Microbiology, 1976-06, Vol.31 (6), p.913-920

1976

Volltextzugriff (PDF)

Prospects for silicon monolithic opto-electronics with polymer light emitting diodes

Journal of lightwave technology, 1994-12, Vol.12 (12), p.2114-2121

1994

Volltextzugriff (PDF)

The design and characterization of nonoverlapping super self-aligned BiCMOS technology

IEEE transactions on electron devices, 1991-01, Vol.38 (1), p.141-150

1991

Volltextzugriff (PDF)

Generation of constant-power curves for three-terminal coupled-cavity lasers

Electronics letters, 1984-04, Vol.20 (8), p.329-330

1984

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High speed linear array circuit with AlGaAs/GaAs heterojunction bipolar transistors (HBTs)

Electronics letters, 1990-07, Vol.26 (15), p.1157-1158

1990

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Digital NMOS test circuits fabricated in silicon MBE

IEEE electron device letters, 1984-02, Vol.5 (2), p.29-31

1984

Volltextzugriff (PDF)

Nonoverlapping super self-aligned device structure for high-performance VLSI

IEEE electron device letters, 1990-02, Vol.11 (2), p.85-87

1990

Volltextzugriff (PDF)

DC-1Gb/s burst-mode compatible receiver for optical bus applications

Journal of lightwave technology, 1992-02, Vol.10 (2), p.244-249

1992

Volltextzugriff (PDF)

Intercavity coupling gap width dependence in coupled-cavity lasers

Electronics letters, 1984-01, Vol.20 (8), p.350-352

1984

Volltextzugriff (PDF)

Stabilization and optimum biasing of dynamic-single-mode coupled-cavity lasers

Applied physics letters, 1984-01, Vol.44 (2), p.169-171

1984

Volltextzugriff (PDF)

An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxy

IEEE electron device letters, 1981-11, Vol.2 (11), p.293-295

1981

Volltextzugriff (PDF)

A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

Applied physics letters, 1982-02, Vol.40 (3), p.239-241

1982

Volltextzugriff (PDF)

Stabilized biasing of semiconductor lasers

Bell System Technical Journal, 1983-09, Vol.62 (7), p.1923-1936

1983

Volltextzugriff (PDF)

An ultra-high-speed ECL-BiCMOS technology with silicon fillet self-aligned contacts

IEEE transactions on electron devices, 1994-09, Vol.41 (9), p.1546-1555

1994

Volltextzugriff (PDF)

AlGaAs/GaAs heterojunction bipolar transistor decision circuit

Electronics letters, 1989-01, Vol.25 (2), p.118-119

1989

Volltextzugriff (PDF)

A technique for real-time measurement of < e1 > N < /e1 > th-orderderivatives < e1 > d < /e1 > (N) < e1 > V < /e1 > / < e1 > dI < /e1 > (N)

IEEE journal of solid-state circuits, 1989-08, Vol.24 (4), p.976-984

Swartz, R G

1989

Volltextzugriff (PDF)

IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1228-1229

1981

Volltextzugriff (PDF)

CASFET: A MOSFET-JFET cascode device with ultralow gate capacitance

IEEE transactions on electron devices, 1984-12, Vol.31 (12), p.1752-1758

1984

Volltextzugriff (PDF)

Buried channel MOSFET's with gate lengths from 2.5 mu m to 700 (angstrom)

IEEE electron device letters, 1982-01, Vol.EDL-3 (10), p.322-324

1982

Volltextzugriff (PDF)

An integrated circuit for multiplexing and driving injection lasers

IEEE journal of solid-state circuits, 1982-08, Vol.17 (4), p.753-760

1982

Volltextzugriff (PDF)

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Design techniques for low-voltage high-speed digital bipolar circuits

Burst-mode compatible optical receiver with a large dynamic range

A high speed burst mode optoelectronic integrated circuit photoreceiver using InP/InGaAs HBT's

High-speed, burst-mode, packet-capable optical receiver and instantaneous clock recovery for optical bus operation

A high performance super self-aligned 3 V/5 V BiCMOS technology with extremely low parasitics for low-power mixed-signal applications

Survival of bacteria in seawater using a diffusion chamber apparatus in situ

Prospects for silicon monolithic opto-electronics with polymer light emitting diodes

The design and characterization of nonoverlapping super self-aligned BiCMOS technology

Generation of constant-power curves for three-terminal coupled-cavity lasers

High speed linear array circuit with AlGaAs/GaAs heterojunction bipolar transistors (HBTs)

Digital NMOS test circuits fabricated in silicon MBE

Nonoverlapping super self-aligned device structure for high-performance VLSI

DC-1Gb/s burst-mode compatible receiver for optical bus applications

Intercavity coupling gap width dependence in coupled-cavity lasers

Stabilization and optimum biasing of dynamic-single-mode coupled-cavity lasers

An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxy

A technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

Stabilized biasing of semiconductor lasers

An ultra-high-speed ECL-BiCMOS technology with silicon fillet self-aligned contacts

AlGaAs/GaAs heterojunction bipolar transistor decision circuit

A technique for real-time measurement of < e1 > N < /e1 > th-orderderivatives < e1 > d < /e1 > (N) < e1 > V < /e1 > / < e1 > dI < /e1 > (N)

IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

CASFET: A MOSFET-JFET cascode device with ultralow gate capacitance

Buried channel MOSFET's with gate lengths from 2.5 mu m to 700 (angstrom)

An integrated circuit for multiplexing and driving injection lasers

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