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Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

Journal of crystal growth, 2006-02, Vol.288 (1), p.65-69

2006

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Properties of Silicon Layers Grown by Molecular-Beam Epitaxy

Inorganic materials, 2005-11, Vol.41 (11), p.1131-1134

2005

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Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

Inorganic materials, 2010-07, Vol.46 (7), p.693-702

2010

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Erbium vaporization from silicon in vacuum

Inorganic materials, 2003-02, Vol.39 (2), p.93-95

2003

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Erbium and germanium profiles in Si1-xGex layers grown by silicon sublimation-source molecular-beam epitaxy in GeH4

Inorganic materials, 2003, Vol.39 (1), p.3-5

2003

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A device for sublimation molecular beam deposition of erbium-doped silicon films

Instruments and experimental techniques (New York), 2000-07, Vol.43 (4), p.564-565

2000

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Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

Inorganic materials, 2007-04, Vol.43 (4), p.331-337

2007

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A device for heating a substrate during molecular beam epitaxy

Instruments and experimental techniques (New York), 2016-03, Vol.59 (2), p.317-320

2016

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A device for growing silicon films on standard wafers using a sublimation source

Instruments and experimental techniques (New York), 2015-11, Vol.58 (6), p.813-816

2015

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Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

JETP letters, 2005-01, Vol.81 (10), p.494-497

2005

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Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy

Technical physics, 2014-11, Vol.59 (11), p.1732-1735

2014

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A Substrate Heater for an Ultrahigh Vacuum

Instruments and experimental techniques (New York), 2004-09, Vol.47 (5), p.715-716

2004

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Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates

Physics of the solid state, 2005-01, Vol.47 (1), p.89

Shengurov, V. G.

2005

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Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures

Physics of the solid state, 2004-02, Vol.46 (2), p.345-350

2004

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Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers

Physics of the solid state, 2004-01, Vol.46 (1), p.10-12

2004

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Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy

Physics of the solid state, 2004-01, Vol.46 (1), p.101-103

2004

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Luminescent Si-Ge solid solution layers ER-doped in molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2002-06, Vol.36 (6), p.625-628

2002

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Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2001-08, Vol.35 (8), p.918-923

2001

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Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy

Technical physics letters, 2000-01, Vol.26 (1), p.41-43

2000

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Methods for the doping of silicon layers in growth by sublimation MBE

Semiconductors (Woodbury, N.Y.), 2006-02, Vol.40 (2), p.183-189

2006

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Morphology and photoluminescence of self-assembled GeSi/Si nanoclusters grown by sublimation molecular-beam epitaxy in a GeH4 ambient

Bulletin of the Russian Academy of Sciences. Physics, 2008-02, Vol.72 (2), p.249-252

2008

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Morphology and photoluminescence of self-assembled GeSi/Si nanoclusters grown by sublimation molecular-beam epitaxy in a GeH4 ambient

Bulletin of the Russian Academy of Sciences. Physics, 2008-02, Vol.72 (2), p.249-252

2008

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Morphology and photoluminescence of self-assembled GeSi/Si nanoclusters grown by sublimation molecular-beam epitaxy in a GeH^sub 4^ ambient

Bulletin of the Russian Academy of Sciences. Physics, 2008-02, Vol.72 (2), p.249

2008

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Properties of optically active Si:Er and Si sub(1-x)Ge sub(x) layers grown by the sublimation MBE method [Thin Solid Films 369 (2000) 320-323

Thin solid films, 2001-01, Vol.381 (1), p.164-169

2001

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Si/Si1 − x Ge x : Er/Si(100) heterostructures grown by sublimation of silicon in germane gas atmosphere

Bulletin of the Russian Academy of Sciences. Physics, 2007-01, Vol.71 (1), p.113-115

2007

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Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies

Properties of Silicon Layers Grown by Molecular-Beam Epitaxy

Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

Erbium vaporization from silicon in vacuum

Erbium and germanium profiles in Si1-xGex layers grown by silicon sublimation-source molecular-beam epitaxy in GeH4

A device for sublimation molecular beam deposition of erbium-doped silicon films

Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

A device for heating a substrate during molecular beam epitaxy

A device for growing silicon films on standard wafers using a sublimation source

Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy

A Substrate Heater for an Ultrahigh Vacuum

Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates

Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures

Structural and photoluminescence properties of heteroepitaxial silicon-on-sapphire layers

Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy

Luminescent Si-Ge solid solution layers ER-doped in molecular-beam epitaxy

Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy

Doping of silicon layers from a sublimating erbium source in molecular beam epitaxy

Methods for the doping of silicon layers in growth by sublimation MBE

Morphology and photoluminescence of self-assembled GeSi/Si nanoclusters grown by sublimation molecular-beam epitaxy in a GeH4 ambient

Morphology and photoluminescence of self-assembled GeSi/Si nanoclusters grown by sublimation molecular-beam epitaxy in a GeH4 ambient

Morphology and photoluminescence of self-assembled GeSi/Si nanoclusters grown by sublimation molecular-beam epitaxy in a GeH^sub 4^ ambient

Properties of optically active Si:Er and Si sub(1-x)Ge sub(x) layers grown by the sublimation MBE method [Thin Solid Films 369 (2000) 320-323

Si/Si1 − x Ge x : Er/Si(100) heterostructures grown by sublimation of silicon in germane gas atmosphere

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