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Intermediate-temperature operation of solid oxide fuel cells (IT-SOFCs) with thin film proton conductive electrolyte

Journal of physics. Conference series, 2015-12, Vol.660 (1), p.12057

2015

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Characterization of sputtered barium strontium titanate and strontium titanate-thin films

Journal of applied physics, 1997-09, Vol.82 (5), p.2558-2566

1997

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Development of PZT sputtering method for mass-production

Applied surface science, 2001-01, Vol.169, p.539-543

2001

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Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning

2019 Symposium on VLSI Technology, 2019, p.T66-T67

2019

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Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.36.4.1-36.4.4

2019

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Manufacturing technology of all-solid-state thin-film battery for stand-alone MEMS/sensor application

2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2017, p.1871-1874

2017

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Reliability benefits of a metallic liner in confined PCM

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.6D.5-1-6D.5-5

2018

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Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.3.6.1-3.6.4

2015

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A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer

2013 IEEE International Electron Devices Meeting, 2013, p.30.7.1-30.7.4

2013

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Lead content control of PLZT thin films prepared by RF magnetron sputtering

Integrated ferroelectrics, 1997-01, Vol.14 (1-4), p.59-68

1997

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ALD-based confined PCM with a metallic liner toward unlimited endurance

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.4.2.1-4.2.4

2016

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A study of sputtered barium strontium titanate and strontium titanate thin films

Integrated ferroelectrics, 1997-09, Vol.17 (1-4), p.165-178

1997

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RF Magnetron Sputtering Process for (Ba,Sr)TiO3 Thin Films with Higher Dielectric Constant

MRS proceedings, 2003, Vol.784

2003

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RF Magnetron Sputtering Process for (Ba,Sr)TiO 3 Thin Films with Higher Dielectric Constant

MRS proceedings, 2003, Vol.784, Article C7.8

2003

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Novel TSV process technologies for 2.5D/3D packaging

2014 IEEE 64th Electronic Components and Technology Conference (ECTC), 2014, p.1697-1699

2014

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Thin-film processing of "exotic" phase-change and ferroelectric materials for IoT applications

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-4

2017

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Development of the technology to control the spatial distribution of plasma using double ICP coil

2014 IEEE 64th Electronic Components and Technology Conference (ECTC), 2014, p.846-849

2014

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Preparation of PZT Thin Films by Liquid-Source MOCVD Using of Cyclohexane Solvent

Integrated ferroelectrics, 2003-09, Vol.59 (1), p.1445-1451

2003

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A novel scallop free TSV etching method in magnetic neutral loop discharge plasma

2012 IEEE 62nd Electronic Components and Technology Conference, 2012, p.794-795

2012

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The Control of Pb Loss for PZT Based FRAM

Integrated ferroelectrics, 2002-01, Vol.48 (1), p.161-169

2002

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Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O 3 Ferroelectric Thin Film

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9S), p.5789

1997

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Preparation of SrBi2(Ta, Nb)2O9 thin films by rf sputtering for ferroelectric memory production

Integrated ferroelectrics, 2000-11, Vol.31 (1-4), p.23-33

2000

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Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system

Integrated ferroelectrics, 1999-10, Vol.26 (1-4), p.47-55

1999

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PREPARATION OF SrBi2Ta1.5Nb0.5O9 FERROELECTRIC THIN FILMS BY RF SPUTTERING ON LARGE SUBSTRATE

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9B, pp. 5460-5464. 2000, 2000, Vol.39 (9B), p.5460-5464

2000

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Plasma etching of PZT capacitor using ISM plasma source for ferroelectric memory application

Integrated ferroelectrics, 2001-01, Vol.39 (1-4), p.23-30

2001

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Intermediate-temperature operation of solid oxide fuel cells (IT-SOFCs) with thin film proton conductive electrolyte

Characterization of sputtered barium strontium titanate and strontium titanate-thin films

Development of PZT sputtering method for mass-production

Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning

Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM

Manufacturing technology of all-solid-state thin-film battery for stand-alone MEMS/sensor application

Reliability benefits of a metallic liner in confined PCM

Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory

A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer

Lead content control of PLZT thin films prepared by RF magnetron sputtering

ALD-based confined PCM with a metallic liner toward unlimited endurance

A study of sputtered barium strontium titanate and strontium titanate thin films

RF Magnetron Sputtering Process for (Ba,Sr)TiO3 Thin Films with Higher Dielectric Constant

RF Magnetron Sputtering Process for (Ba,Sr)TiO 3 Thin Films with Higher Dielectric Constant

Novel TSV process technologies for 2.5D/3D packaging

Thin-film processing of "exotic" phase-change and ferroelectric materials for IoT applications

Development of the technology to control the spatial distribution of plasma using double ICP coil

Preparation of PZT Thin Films by Liquid-Source MOCVD Using of Cyclohexane Solvent

A novel scallop free TSV etching method in magnetic neutral loop discharge plasma

The Control of Pb Loss for PZT Based FRAM

Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O 3 Ferroelectric Thin Film

Preparation of SrBi2(Ta, Nb)2O9 thin films by rf sputtering for ferroelectric memory production

Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system

PREPARATION OF SrBi2Ta1.5Nb0.5O9 FERROELECTRIC THIN FILMS BY RF SPUTTERING ON LARGE SUBSTRATE

Plasma etching of PZT capacitor using ISM plasma source for ferroelectric memory application

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