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Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-μm Waveband

IEEE journal of selected topics in quantum electronics, 2019-11, Vol.25 (6), p.1-5

2019

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Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Diamond and related materials, 2020-04, Vol.104, p.107744, Article 107744

2020

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High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

IEEE journal of quantum electronics, 2020-08, Vol.56 (4), p.1-4

2020

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InAs/InP quantum dot VECSEL emitting at 1.5 μm

Applied physics letters, 2019-10, Vol.115 (17)

2019

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8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band

Optics express, 2011-08, Vol.19 (18), p.16996-17001

2011

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Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.414-422

2015

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Wafer-fused heterostructures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014016

2011

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10-Gb/s and 10-km error-free transmission up to 100°C with 13-μm wavelength wafer-fused VCSELs

Optics express, 2009-07, Vol.17 (15), p.12981

2009

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Control of cavity lifetime of 1.5 µm wafer-fused VCSELs by digital mirror trimming

Optics express, 2014-12, Vol.22 (26), p.32180-32187

2014

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Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Journal of quantitative spectroscopy & radiative transfer, 2014-11, Vol.147, p.53-59

2014

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Performances of Microwave-Band Analog Signal Transmission Using Wafer-Fused Long Wavelength VCSELs

IEEE photonics technology letters, 2011-10, Vol.23 (20), p.1463-1465, Article 1463

2011

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Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 \mu Wavelength

IEEE journal of quantum electronics, 2013-11, Vol.49 (11), p.939-944

2013

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Wafer-fused heterostructures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band: From heterostructures to nanostructures

Semiconductor science and technology, 2011, Vol.26 (1)

2011

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Stokes Parameters and Hybridization of Optical Modes in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs)

2014 International Semiconductor Laser Conference, 2014, p.108-110

2014

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1.55-μm optically pumped wafer-fused tunable VCSELs with 32-nm tuning range

IEEE photonics technology letters, 2004-09, Vol.16 (9), p.1991-1993

2004

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10-Gb/s and 10-km error-free transmission up to 100 degrees C with 1.3-microm wavelength wafer-fused VCSELs

Optics express, 2009-07, Vol.17 (15), p.12981-12986

2009

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Compact‐size electronic device for diode‐laser characteristic curve tracing

Optical engineering, 1996-05, Vol.35 (5), p.1353

Smeu, Emil

1996

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Fabrication, characterization, and applications of high‐performance AlGaAs‐based buried‐heterostructure diode lasers

Optical engineering, 1996-05, Vol.35 (5), p.1278

Syrbu, Alexei V.

1996

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Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-μm Waveband

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

InAs/InP quantum dot VECSEL emitting at 1.5 μm

8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Wafer-fused heterostructures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

10-Gb/s and 10-km error-free transmission up to 100°C with 13-μm wavelength wafer-fused VCSELs

Control of cavity lifetime of 1.5 µm wafer-fused VCSELs by digital mirror trimming

Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Performances of Microwave-Band Analog Signal Transmission Using Wafer-Fused Long Wavelength VCSELs

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 \mu Wavelength

Wafer-fused heterostructures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band: From heterostructures to nanostructures

Stokes Parameters and Hybridization of Optical Modes in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs)

1.55-μm optically pumped wafer-fused tunable VCSELs with 32-nm tuning range

10-Gb/s and 10-km error-free transmission up to 100 degrees C with 1.3-microm wavelength wafer-fused VCSELs

Compact‐size electronic device for diode‐laser characteristic curve tracing

Fabrication, characterization, and applications of high‐performance AlGaAs‐based buried‐heterostructure diode lasers

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