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GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

Solar energy materials and solar cells, 2018-06, Vol.180, p.303-310

2018

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Quantification of the As/P content in GaAsP during MOVPE growth

Applied physics letters, 2020-08, Vol.117 (6)

2020

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Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient

New journal of physics, 2013-11, Vol.15 (11), p.113049

2013

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The interface of GaP(100) and H2O studied by photoemission and reflection anisotropy spectroscopy

New journal of physics, 2013-10, Vol.15 (10), p.103003

2013

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Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Epitaxial III-V Films and Surfaces for Photoelectrocatalysis

ChemPhysChem (Print), 2012-08, Vol.13 (12), p.2899-2909

2012

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The impact of non-ideal surfaces on the solid-water interaction: a time-resolved adsorption study

SciPost physics, 2019-05, Vol.6 (5), p.058, Article 058

2019

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In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

APL materials, 2015-12, Vol.3 (12), p.126110-126110-6

2015

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Two‐Photon Photoemission Spectroscopy for Studying Energetics and Electron Dynamics at Semiconductor Interfaces

Physica status solidi. A, Applications and materials science, 2019-04, Vol.216 (8), p.n/a

2019

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Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100)

Crystal growth & design, 2022-12, Vol.22 (12), p.7040-7049

2022

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Gapn-on-si(100) and buried interfaces

Supplie, Oliver

2016

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MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure

Nanotechnology, 2019-03, Vol.30 (10), p.104002-104002

2019

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Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

Progress in crystal growth and characterization of materials, 2018-12, Vol.64 (4), p.103-132

2018

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Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics (Phys. Status Solidi B 4/2018)

physica status solidi (b), 2018-04, Vol.255 (4), p.n/a

2018

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Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth

Crystal growth & design, 2016-11, Vol.16 (11), p.6208-6213

2016

Volltextzugriff (PDF)

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics

physica status solidi (b), 2018-04, Vol.255 (4), p.n/a

2018

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Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth

ACS nano, 2017-09, Vol.11 (9), p.8679-8689

2017

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Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience

Applied surface science, 2018-12, Vol.462, p.1002-1007

2018

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Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory

Physical review. B, Condensed matter and materials physics, 2014-12, Vol.90 (23), Article 235301

2014

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Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

Applied surface science, 2021-11, Vol.565, p.150513, Article 150513

2021

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Anomalous double-layer step formation on Si(100) in hydrogen process ambient

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (19), Article 195310

2012

Volltextzugriff (PDF)

GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

Solar energy materials and solar cells, 2018-06, Vol.180, p.343-349

2018

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Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy

Physical review. B, Condensed matter and materials physics, 2014-04, Vol.89 (16), Article 165312

2014

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Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H 2 ambient

New journal of physics, 2013-11, Vol.15 (11), p.113049

2013

Volltextzugriff (PDF)

In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient

Journal of crystal growth, 2017-04, Vol.464, p.14-19

2017

Volltextzugriff (PDF)

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GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

Quantification of the As/P content in GaAsP during MOVPE growth

Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient

The interface of GaP(100) and H2O studied by photoemission and reflection anisotropy spectroscopy

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Epitaxial III-V Films and Surfaces for Photoelectrocatalysis

The impact of non-ideal surfaces on the solid-water interaction: a time-resolved adsorption study

In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

Two‐Photon Photoemission Spectroscopy for Studying Energetics and Electron Dynamics at Semiconductor Interfaces

Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100)

Gapn-on-si(100) and buried interfaces

MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure

Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics (Phys. Status Solidi B 4/2018)

Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics

Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth

Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience

Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

Anomalous double-layer step formation on Si(100) in hydrogen process ambient

GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy

Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H 2 ambient

In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient

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