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High‐Performance Self‐Assembled ZnO Nanowrinkle Network Structured Photodetectors

Physica status solidi. A, Applications and materials science, 2023-09, Vol.220 (17), p.n/a

2023

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Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Scientific reports, 2021-03, Vol.11 (1), p.7172-7172, Article 7172

2021

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Pulse‐Modulation Controllable Monolithic Full‐Color Semipolar GaN‐based Light Emitting Diodes

Advanced optical materials, 2023-12, Vol.11 (23), p.n/a

2023

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High Efficiency Flat-Type GaN-Based Light-Emitting Diodes with Multiple Local Breakdown Conductive Channels

Materials, 2024-06, Vol.17 (11), p.2700

2024

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High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel

Scientific reports, 2019-09, Vol.9 (1), p.13654-7, Article 13654

2019

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Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters

Advanced materials (Weinheim), 2013-08, Vol.25 (32), p.4470-4476

2013

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Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process

Materials, 2024-06, Vol.17 (11), p.2727

2024

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Effectiveness of Peer Support Programs for Severe Mental Illness: A Systematic Review and Meta-Analysis

Healthcare (Basel), 2024-06, Vol.12 (12), p.1179

2024

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Enhancement of light extraction efficiency in the GaN-based light-emitting diodes by selective growth of ZnO nanorods

Applied physics. A, Materials science & processing, 2019-02, Vol.125 (2), p.1-6, Article 104

2019

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Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr3 Green Quantum Dots

Materials, 2023-02, Vol.16 (3), p.1290

2023

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High‐Efficiency ZnO‐Based Ultraviolet Photodetector with Integrated Single‐Walled Carbon Nanotube Thin‐Film Heater

Advanced materials interfaces, 2023-06, Vol.10 (17), p.n/a

2023

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Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer

Journal of electronic materials, 2019-07, Vol.48 (7), p.4217-4225

2019

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Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

Applied physics. A, Materials science & processing, 2018-02, Vol.124 (2), p.1-10, Article 115

2018

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Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

Photonics, 2024-01, Vol.11 (2), p.135

2024

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Self‐Assembled Nanowrinkle‐Network‐Structured Transparent Conductive Zinc Oxide for High‐Efficiency Inorganic Light‐Emitting Diodes

Advanced materials interfaces, 2022-02, Vol.9 (4), p.n/a

2022

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Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2020-10, Vol.217 (19), p.n/a

2020

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Oxide Semiconductor Memristor‐Based Optoelectronic Synaptic Devices With Quaternary Memory Storage

Advanced electronic materials, 2024-07, Vol.10 (7), p.n/a

2024

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A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Physica status solidi. PSS-RRL. Rapid research letters, 2021-02, Vol.15 (2), p.n/a

2021

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Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3

Journal of electronic materials, 2020, Vol.49 (1), p.297-305

2020

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The Correlation between Surface V-Shaped Defects and Local Breakdown Phenomena in GaN-Based LEDs

Photonics, 2023-10, Vol.10 (10), p.1103

2023

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Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Thickness dependence of crystal and optical characterization on ZnO thin film grown by atomic layer deposition

AIP advances, 2018-06, Vol.8 (6), p.065306-065306-6

2018

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Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress

Journal of the Korean Physical Society, 2018, 73(12), , pp.1879-1883

2018

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Breakdown-induced conductive channel for III-nitride light-emitting devices

Scientific reports, 2018-11, Vol.8 (1), p.16547-9, Article 16547

2018

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Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes

Advanced electronic materials, 2022-01, Vol.8 (1), p.n/a

2022

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High‐Performance Self‐Assembled ZnO Nanowrinkle Network Structured Photodetectors

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Pulse‐Modulation Controllable Monolithic Full‐Color Semipolar GaN‐based Light Emitting Diodes

High Efficiency Flat-Type GaN-Based Light-Emitting Diodes with Multiple Local Breakdown Conductive Channels

High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel

Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters

Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process

Effectiveness of Peer Support Programs for Severe Mental Illness: A Systematic Review and Meta-Analysis

Enhancement of light extraction efficiency in the GaN-based light-emitting diodes by selective growth of ZnO nanorods

Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr3 Green Quantum Dots

High‐Efficiency ZnO‐Based Ultraviolet Photodetector with Integrated Single‐Walled Carbon Nanotube Thin‐Film Heater

Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

Self‐Assembled Nanowrinkle‐Network‐Structured Transparent Conductive Zinc Oxide for High‐Efficiency Inorganic Light‐Emitting Diodes

Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes

Oxide Semiconductor Memristor‐Based Optoelectronic Synaptic Devices With Quaternary Memory Storage

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3

The Correlation between Surface V-Shaped Defects and Local Breakdown Phenomena in GaN-Based LEDs

Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes

Thickness dependence of crystal and optical characterization on ZnO thin film grown by atomic layer deposition

Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress

Breakdown-induced conductive channel for III-nitride light-emitting devices

Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes

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