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Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.1979-1986

2014

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Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

ETRI journal, 2023-02, Vol.45 (1), p.171-179

2023

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W‐Band MMIC chipset in 0.1‐μm mHEMT technology

ETRI Journal, 2020, 42(4), , pp.549-561

2020

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A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices

Journal of the Korean Physical Society, 2020, 77(2), , pp.122-126

2020

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Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs

Current Applied Physics, 2022, 39(0), , pp.128-132

2022

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Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs

IEEE electron device letters, 2017-04, Vol.38 (4), p.441-444

2017

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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Crystals (Basel), 2021-11, Vol.11 (11), p.1414

2021

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Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.46-52

2018

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Evidence of Sub-Band Modulated Transport in Planar Fully Depleted Silicon-on-Insulator MOSFETs

IEEE electron device letters, 2014-11, Vol.35 (11), p.1082-1084

2014

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Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact

Journal of the Korean Physical Society, 2020, 76(9), , pp.837-842

2020

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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (5), p.898

2023

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The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Thin solid films, 2017-04, Vol.628, p.31-35

2017

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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Nanomaterials (Basel, Switzerland), 2020-10, Vol.10 (11), p.2175

2020

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Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44104

2016

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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

Nanomaterials (Basel, Switzerland), 2020-10, Vol.10 (11), p.2116

2020

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Normally-off GaN MOSFETs on insulating substrate

Solid-state electronics, 2013-12, Vol.90, p.79-85

2013

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Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications

ACS applied materials & interfaces, 2021-12, Vol.13 (49), p.59440-59449

2021

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Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate

Materials science in semiconductor processing, 2024-02, Vol.170, p.107985, Article 107985

2024

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Perceptions of seniors with heart failure regarding autonomous zero-effort monitoring of physiological parameters in the smart-home environment

Heart & lung, 2017-07, Vol.46 (4), p.313-319

2017

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Demonstration of Unified Memory in FinFETs

International journal of high speed electronics, 2014-09, Vol.23 (3n04), p.1450019

2014

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Simple Wearable Eye Tracker With Mini-Infrared Point Sensors

IEEE access, 2024, Vol.12, p.41019-41026

2024

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Characteristics of GaN and AlGaN/GaN FinFETs

Solid-state electronics, 2014-07, Vol.97, p.66-75

2014

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Enhanced coupling effects in vertical double-gate FinFETs

Solid-state electronics, 2014-07, Vol.97, p.88-98

2014

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Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETs

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.296-299

2013

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Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

Solid-state electronics, 2013-12, Vol.90, p.134-142

2013

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Mobility Investigation by Geometrical Magnetoresistance in Fully Depleted MOSFETs and FinFETs

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices

Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs

Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric

Evidence of Sub-Band Modulated Transport in Planar Fully Depleted Silicon-on-Insulator MOSFETs

Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact

Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

Normally-off GaN MOSFETs on insulating substrate

Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications

Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate

Perceptions of seniors with heart failure regarding autonomous zero-effort monitoring of physiological parameters in the smart-home environment

Demonstration of Unified Memory in FinFETs

Simple Wearable Eye Tracker With Mini-Infrared Point Sensors

Characteristics of GaN and AlGaN/GaN FinFETs

Enhanced coupling effects in vertical double-gate FinFETs

Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETs

Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors

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