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A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

IEEE electron device letters, 2013-08, Vol.34 (8), p.999-1001

2013

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Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM

Scientific reports, 2013-10, Vol.3 (1), p.2929-2929, Article 2929

2013

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Quantum-size effects in hafnium-oxide resistive switching

Applied physics letters, 2013-05, Vol.102 (18), p.183505

2013

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Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Journal of applied physics, 2014-06, Vol.115 (24)

2014

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Conductance Quantization in Resistive Random Access Memory

Nanoscale Research Letters, 2015-12, Vol.10 (1), p.420-420, Article 420

2015

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Analysis and modeling of resistive switching statistics

Journal of applied physics, 2012-04, Vol.111 (7), p.074508-074508-19

2012

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Reset Statistics of NiO-Based Resistive Switching Memories

IEEE electron device letters, 2011-11, Vol.32 (11), p.1570-1572

2011

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Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

ACS applied materials & interfaces, 2014-04, Vol.6 (7), p.5056-5060

2014

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Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films

ACS applied materials & interfaces, 2018-09, Vol.10 (36), p.30522-30531

2018

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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

Scientific reports, 2017-09, Vol.7 (1), p.11204-11, Article 11204

2017

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Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3349-3355

2019

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Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

Advanced quantum technologies (Online), 2023-07, Vol.6 (7), p.n/a

2023

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Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

IEEE access, 2020, Vol.8, p.202174-202193

2020

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On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (5), p.1261

2021

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Reliability Wearout Mechanisms in Advanced CMOS Technologies

1, 2009

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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Materials, 2020-02, Vol.13 (4), p.938

2020

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Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks

Micromachines (Basel), 2022-11, Vol.13 (11), p.2002

2022

Volltextzugriff (PDF)

An improved analytical model for the statistics of SET emergence point in HfO2 memristive device

AIP advances, 2019-02, Vol.9 (2), p.025118-025118-6

2019

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Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

Nanoscale research letters, 2016-12, Vol.11 (1), p.269-269, Article 269

2016

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SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

Frontiers in physics, 2021-09, Vol.9

2021

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On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits

Materials, 2019-07, Vol.12 (14), p.2260

2019

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SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

International journal of circuit theory and applications, 2018-01, Vol.46 (1), p.39-49

2018

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A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM

Quantum-size effects in hafnium-oxide resistive switching

Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Conductance Quantization in Resistive Random Access Memory

Analysis and modeling of resistive switching statistics

Reset Statistics of NiO-Based Resistive Switching Memories

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks

An improved analytical model for the statistics of SET emergence point in HfO2 memristive device

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

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