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Nanometer-scale switches using copper sulfide

Applied physics letters, 2003-05, Vol.82 (18), p.3032-3034

2003

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Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3283-3287

2008

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IEEE_Xplore

A nonvolatile programmable solid-electrolyte nanometer switch

IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.168-176

2005

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IEEE_Xplore

Low-power embedded ReRAM technology for IoT applications

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T108-T109

2015

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IEEE_Xplore

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Applied physics letters, 1995-05, Vol.66 (22), p.3024-3026

1995

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Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

2010 Symposium on VLSI Technology, 2010, p.61-62

2010

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IEEE_Xplore

Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Applied physics letters, 1997-07, Vol.71 (2), p.258-260

1997

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Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide

Journal of physics. Conference series, 2007-04, Vol.61 (1), p.1157-1161

2007

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Nonlinear optical spectroscopy on one-dimensional excitons in silicon polymer, polysilane

Physical review letters, 1992-07, Vol.69 (4), p.668-671

1992

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Observation of lateral confinement effect in Ge quantum wires self-aligned at step edges on Si(100)

Applied physics letters, 1996-03, Vol.68 (13), p.1847-1849

1996

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Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot

Thin solid films, 1998-05, Vol.321 (1), p.65-69

1998

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Photoluminescence investigation on growth mode changeover of Ge on Si(100)

Journal of crystal growth, 1995-12, Vol.157 (1), p.265-269

1995

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Single-electron memory using carrier traps in a silicon nitride layer

Applied physics letters, 1999-06, Vol.74 (23), p.3555-3557

1999

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Luminescence study on interdiffusion in strained Si1-xGex/Si single quantum wells grown by molecular beam epitaxy

Applied physics letters, 1993-09, Vol.63 (12), p.1651-1653

1993

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Formation and optical properties of SiGe/Si quantum structures

Applied surface science, 1996-08, Vol.102, p.263-271

1996

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High-voltage complementary BEOL-FETs on Cu interconnects using N-type IGZO and P-type SnO dual oxide semiconductor channels

2013 Symposium on VLSI Technology, 2013, p.T250-T251

2013

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IEEE_Xplore

Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells

Journal of crystal growth, 1994-03, Vol.136 (1-4), p.315-321

1994

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Low-power embedded ReRAM technology for IoT applications

2015 Symposium on VLSI Circuits (VLSI Circuits), 2015, p.T108-T109

2015

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IEEE_Xplore

Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches

2012 Symposium on VLSI Technology (VLSIT), 2012, p.123-124

2012

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IEEE_Xplore

Enhanced drivability of high-Vbd dual-oxide-based complementary BEOL-FETs for compact on-chip pre-driver applications

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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IEEE_Xplore

A nonvolatile programmable solid electrolyte nanometer switch

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519), 2004, p.290-529 Vol.1

First edition, 2004

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IEEE_Xplore

Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)

Thin solid films, 1997-02, Vol.294 (1), p.336-339

1997

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A Ta2O5 solid-electrolyte switch with improved reliability

2007 IEEE Symposium on VLSI Technology, 2007, p.38-39

2007

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IEEE_Xplore

Photoluminescence investigation on growth mode changeover in Ge-rich Si1-xGex/Si strained quantum wells

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1038-1044

1995

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Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4L), p.L364

2006

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Nanometer-scale switches using copper sulfide

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

A nonvolatile programmable solid-electrolyte nanometer switch

Low-power embedded ReRAM technology for IoT applications

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide

Nonlinear optical spectroscopy on one-dimensional excitons in silicon polymer, polysilane

Observation of lateral confinement effect in Ge quantum wires self-aligned at step edges on Si(100)

Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot

Photoluminescence investigation on growth mode changeover of Ge on Si(100)

Single-electron memory using carrier traps in a silicon nitride layer

Luminescence study on interdiffusion in strained Si1-xGex/Si single quantum wells grown by molecular beam epitaxy

Formation and optical properties of SiGe/Si quantum structures

High-voltage complementary BEOL-FETs on Cu interconnects using N-type IGZO and P-type SnO dual oxide semiconductor channels

Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells

Low-power embedded ReRAM technology for IoT applications

Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches

Enhanced drivability of high-Vbd dual-oxide-based complementary BEOL-FETs for compact on-chip pre-driver applications

A nonvolatile programmable solid electrolyte nanometer switch

Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells (II-CQWs)

A Ta2O5 solid-electrolyte switch with improved reliability

Photoluminescence investigation on growth mode changeover in Ge-rich Si1-xGex/Si strained quantum wells

Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction

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