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Advances in optical metasurfaces: fabrication and applications [Invited]

Optics express, 2018-05, Vol.26 (10), p.13148

2018

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High-Efficiency Broadband Meta-Hologram with Polarization-Controlled Dual Images

Nano letters, 2014-01, Vol.14 (1), p.225-230

2014

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Active dielectric metasurface based on phase-change medium

Laser & photonics reviews, 2016-11, Vol.10 (6), p.986-994

2016

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Plasmonic enhancement of the third order nonlinear optical phenomena: figures of merit

Optics express, 2013-11, Vol.21 (22), p.27460-27480

2013

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Landau Damping and Limit to Field Confinement and Enhancement in Plasmonic Dimers

ACS photonics, 2017-11, Vol.4 (11), p.2871-2880

2017

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Metalenses: Advances and Applications

Advanced optical materials, 2018-09, Vol.6 (18), p.n/a

2018

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Electrically injected GeSn lasers on Si operating up to 100 K

Optica, 2020-08, Vol.7 (8), p.924

2020

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“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes

Sensors (Basel, Switzerland), 2023-08, Vol.23 (17), p.7386

2023

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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

ACS photonics, 2019-11, Vol.6 (11), p.2807-2815

2019

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Band structure of Ge1−xSnx alloy: a full-zone 30-band k p model

New journal of physics, 2019-07, Vol.21 (7), p.073037

2019

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Practicable enhancement of spontaneous emission using surface plasmons

Applied physics letters, 2007-03, Vol.90 (11), p.111107-111107-3

2007

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All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Applied physics letters, 2018-11, Vol.113 (22)

2018

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Coupled-mode theory of field enhancement in complex metal nanostructures

Physical review. B, Condensed matter and materials physics, 2011-07, Vol.84 (4), Article 045415

2011

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Dark Current Analysis on GeSn p-i-n Photodetectors

Sensors (Basel, Switzerland), 2023-08, Vol.23 (17), p.7531

2023

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Plasmon coupling in vertical split-ring resonator metamolecules

Scientific reports, 2015-06, Vol.5 (1), p.9726-9726, Article 9726

2015

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Ultrafast Thermal Nonlinearity

Scientific reports, 2015-12, Vol.5 (1), p.17899-17899, Article 17899

2015

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Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection

Optics express, 2014-06, Vol.22 (13), p.15639

2014

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Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics

Sensors (Basel, Switzerland), 2022-05, Vol.22 (11), p.3978

2022

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Vertical split-ring resonator based nanoplasmonic sensor

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Optics letters, 2017-02, Vol.42 (3), p.387-390

2017

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Spoof plasmon waveguide enabled ultrathin room temperature THz GaN quantum cascade laser: a feasibility study

Optics express, 2013-11, Vol.21 (23), p.28054-28061

2013

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Theoretical design of mid-infrared interband cascade lasers in SiGeSn system

New journal of physics, 2020-08, Vol.22 (8), p.83061

2020

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Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Applied physics letters, 2014-06, Vol.104 (24)

2014

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Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Applied physics letters, 2014-08, Vol.105 (5)

2014

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Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Materials, 2022-01, Vol.15 (3), p.989

2022

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Advances in optical metasurfaces: fabrication and applications [Invited]

High-Efficiency Broadband Meta-Hologram with Polarization-Controlled Dual Images

Active dielectric metasurface based on phase-change medium

Plasmonic enhancement of the third order nonlinear optical phenomena: figures of merit

Landau Damping and Limit to Field Confinement and Enhancement in Plasmonic Dimers

Metalenses: Advances and Applications

Electrically injected GeSn lasers on Si operating up to 100 K

“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes

Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

Band structure of Ge1−xSnx alloy: a full-zone 30-band k p model

Practicable enhancement of spontaneous emission using surface plasmons

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Coupled-mode theory of field enhancement in complex metal nanostructures

Dark Current Analysis on GeSn p-i-n Photodetectors

Plasmon coupling in vertical split-ring resonator metamolecules

Ultrafast Thermal Nonlinearity

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics

Vertical split-ring resonator based nanoplasmonic sensor

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics

Spoof plasmon waveguide enabled ultrathin room temperature THz GaN quantum cascade laser: a feasibility study

Theoretical design of mid-infrared interband cascade lasers in SiGeSn system

Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

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