UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- \kappa Gate Dielectrics

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.100-108

2009

Volltextzugriff (PDF)

Correlation between texture and mechanical stress durability of thin aluminum films

Thin solid films, 2014-04, Vol.556, p.376-380

2014

Volltextzugriff (PDF)

Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability

Microelectronics and reliability, 2017-09, Vol.76-77, p.38-41

2017

Volltextzugriff (PDF)

Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)

IEEE electron device letters, 2007-01, Vol.28 (1), p.65-67

2007

Volltextzugriff (PDF)

Growth of highly textured aluminum films on LiTaO3 with optimized titanium intermediate layers

Thin solid films, 2011-09, Vol.519 (22), p.8154-8160

2011

Volltextzugriff (PDF)

The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning

Applied surface science, 2007-08, Vol.253 (20), p.8389-8393

2007

Volltextzugriff (PDF)

Effect of Complexation with Modified β-Cyclodextrins on the Luminescent Properties of Bisphenol A in Aqueous Solution

High energy chemistry, 2023-12, Vol.57 (Suppl 3), p.S386-S390

2023

Volltextzugriff (PDF)

The Impact Ionization MOSFET (IMOS) as low-voltage optical detector

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2010-12, Vol.624 (2), p.524-527

2010

Volltextzugriff (PDF)

Enhanced stress durability of nano resonators with scandium doped electrodes

Materials characterization, 2010-11, Vol.61 (11), p.1054-1060

2010

Volltextzugriff (PDF)

Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing

Applied surface science, 2008-07, Vol.254 (19), p.6030-6033

2008

Volltextzugriff (PDF)

Annealing and deposition effects of the chemical composition of silicon-rich nitride

Applied surface science, 2005-04, Vol.243 (1), p.401-408

2005

Volltextzugriff (PDF)

Boron in mesoporous Si — Where have all the carriers gone?

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.951-954

1999

Volltextzugriff (PDF)

Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology

Microelectronics and reliability, 2005-05, Vol.45 (5-6), p.937-940

2005

Volltextzugriff (PDF)

Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-11, Vol.38 (6)

2020

Volltextzugriff (PDF)

Effective and combined stressors from multi-dimensional mission profiles for semiconductor reliability

Microelectronics and reliability, 2019-09, Vol.100-101, p.113323, Article 113323

2019

Volltextzugriff (PDF)

Cobalt oxide based gas sensors on silicon substrate for operation at low temperatures

Sensors and actuators. B, Chemical, 2003-08, Vol.93 (1), p.442-448

2003

Volltextzugriff (PDF)

Measurement of short-lived radon progenies by simultaneous αγ-spectrometry at the German radon reference chamber

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1999-09, Vol.434 (2), p.303-312

1999

Volltextzugriff (PDF)

P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3106

2006

Volltextzugriff (PDF)

Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111)

Thin solid films, 2000-12, Vol.380 (1), p.154-157

2000

Volltextzugriff (PDF)

Formal model of evaluating the reliability of thermal power plants

Pozharovzryvobezopasnostʹ : nauchno-tekhnicheskiĭ zhurnal obshchestvennoĭ organizat͡s︡ii, Assot͡s︡iat͡s︡ii "Pozhnauka" = Fire & explosion safety : the journal of nongovernment organization, the Russian Association for Fire Safety Science, 2019, Vol.28 (2), p.47-56

2019

Volltextzugriff (PDF)

Phonon assisted tunneling in gated p-i-n diodes

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.116-119

2002

Volltextzugriff (PDF)

Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping

Solid-state electronics, 2002-03, Vol.46 (3), p.387-391

2002

Volltextzugriff (PDF)

A GasFET for chlorine detection

IEEE Sensors, 2005, 2005, p.3 pp.

2005

Volltextzugriff (PDF)

Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-4

2019

Volltextzugriff (PDF)

Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

Thin solid films, 2000-07, Vol.369 (1-2), p.383-386

2000

Volltextzugriff (PDF)

1 – 25 von 967

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(702)
Mit Volltextzugriff
(622)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

2 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(370)
Technology
(162)
Life Sciences & Biomedicine
(157)
Physical Sciences
(152)
Humans
(109)
Physics
(79)
Engineering
(75)
Materials Science
(73)
Chemistry
(72)
Male
(69)
Animals
(65)
Female
(62)
Materials Science, Multidisciplinary
(57)
Physics, Applied
(53)
Engineering, Electrical & Electronic
(50)
Middle Aged
(50)
Exact Sciences And Technology
(47)
Adult
(43)
Physics, Condensed Matter
(35)
Applied Sciences
(32)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(16)
... seit 30 Tagen
(5)

Menü

Weitere Dienste

Einstellungen

Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- \kappa Gate Dielectrics

Correlation between texture and mechanical stress durability of thin aluminum films

Evaluation of effective stress times and stress levels from mission profiles for semiconductor reliability

Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)

Growth of highly textured aluminum films on LiTaO3 with optimized titanium intermediate layers

The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning

Effect of Complexation with Modified β-Cyclodextrins on the Luminescent Properties of Bisphenol A in Aqueous Solution

The Impact Ionization MOSFET (IMOS) as low-voltage optical detector

Enhanced stress durability of nano resonators with scandium doped electrodes

Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing

Annealing and deposition effects of the chemical composition of silicon-rich nitride

Boron in mesoporous Si — Where have all the carriers gone?

Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology

Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses

Effective and combined stressors from multi-dimensional mission profiles for semiconductor reliability

Cobalt oxide based gas sensors on silicon substrate for operation at low temperatures

Measurement of short-lived radon progenies by simultaneous αγ-spectrometry at the German radon reference chamber

P-Channel Tunnel Field-Effect Transistors down to Sub-50 nm Channel Lengths

Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111)

Formal model of evaluating the reliability of thermal power plants

Phonon assisted tunneling in gated p-i-n diodes

Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping

A GasFET for chlorine detection

Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability

Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

Suchergebnisse filtern