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High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Applied physics letters, 2024-03, Vol.124 (12)

2024

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Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Applied physics letters, 2009-01, Vol.94 (1), p.011113-011113-3

2009

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High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes

IEEE photonics technology letters, 2007-03, Vol.19 (5), p.336-338

2007

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Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

Applied physics letters, 2013-06, Vol.102 (25)

2013

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Conservative management (marsupialization) of unicystic ameloblastoma: literature review and a case report

Maxillofacial Plastic Reconstructive Surgery, 2017, 39(12), , pp.1-6

2017

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Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design

IEEE journal of quantum electronics, 2007-08, Vol.43 (8), p.625-632

2007

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Enhanced Optical Power of InGaN/GaN Light-Emitting Diode by AlGaN Interlayer and Electron Blocking Layer

IEEE photonics technology letters, 2012-11, Vol.24 (22), p.1991-1994

2012

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Measurements of current spreading length and design of GaN-based light emitting diodes

Applied physics letters, 2007-02, Vol.90 (6), p.063510-063510-3

2007

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Enhanced light extraction of GaN-based light-emitting diodes by using textured n -type GaN layers

Applied physics letters, 2007-04, Vol.90 (16), p.161110-161110-3

2007

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Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

Applied physics letters, 1999-04, Vol.74 (14), p.2029-2031

1999

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Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes

Journal of physics. Condensed matter, 2006-08, Vol.18 (32), p.7703-7708

2006

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Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Applied physics letters, 2008-07, Vol.93 (4)

2008

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Successful replantation of an amputated earlobe by microvascular anastomosis

The Journal of craniofacial surgery, 2009-05, Vol.20 (3), p.822-824

2009

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Lipoma of the finger presenting as restricted motion

Indian journal of plastic surgery, 2008-07, Vol.41 (2), p.237-238

2008

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Shapes of InAs quantum dots on InGaAs∕InP

Applied physics letters, 2004-12, Vol.85 (26), p.6383-6385

2004

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Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Journal of crystal growth, 2004-08, Vol.269 (1), p.95-99

2004

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InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

Optics express, 2017-03, Vol.25 (6), p.6440-6449

2017

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Possibility of Two-Step As-Desorption from (001) InP Using Surface Photoabsorption

Japanese Journal of Applied Physics, 2001-09, Vol.40 (9A), p.L980-L982

2001

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Observation of two independent sources for arsenic carryover

Journal of crystal growth, 2000, Vol.208 (1), p.160-164

2000

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Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots

Journal of electronic materials, 2000-05, Vol.29 (5), p.535-541

2000

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Lipoma of the finger presenting as restricted motion

Indian journal of plastic surgery, 2009-11, Vol.41 (2)

2009

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Improved performance of GaN-based light-emitting diodes with high-quality GaN grown on InN islands

Journal of physics. D, Applied physics, 2011-10, Vol.44 (42), p.425101-1-5

2011

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Effect of growth interruption on In-rich InGaN/GaN single quantum well structures

Physica status solidi. C, 2003-12 (7), p.2830-2833, Article 2830

2003

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Lipoma of the finger presenting as restricted motion

Indian journal of plastic surgery, 2008-07, Vol.41 (2), p.237-238

2008

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Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry

Japanese Journal of Applied Physics, 2007-12, Vol.46 (12L), p.L1194

2007

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High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes

Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

Conservative management (marsupialization) of unicystic ameloblastoma: literature review and a case report

Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design

Enhanced Optical Power of InGaN/GaN Light-Emitting Diode by AlGaN Interlayer and Electron Blocking Layer

Measurements of current spreading length and design of GaN-based light emitting diodes

Enhanced light extraction of GaN-based light-emitting diodes by using textured n -type GaN layers

Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

Electrical spin injection from room-temperature ferromagnetic (Ga, Mn)N in nitride-based spin-polarized light-emitting diodes

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Successful replantation of an amputated earlobe by microvascular anastomosis

Lipoma of the finger presenting as restricted motion

Shapes of InAs quantum dots on InGaAs∕InP

Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

Possibility of Two-Step As-Desorption from (001) InP Using Surface Photoabsorption

Observation of two independent sources for arsenic carryover

Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots

Lipoma of the finger presenting as restricted motion

Improved performance of GaN-based light-emitting diodes with high-quality GaN grown on InN islands

Effect of growth interruption on In-rich InGaN/GaN single quantum well structures

Lipoma of the finger presenting as restricted motion

Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry

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