UB Paderborn / Katalog / Suche / in CDI

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2009-05, Vol.603 (1), p.58-61

2009

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A study of vacuum-ultraviolet stability of silicon photodiodes

Technical physics letters, 2012-09, Vol.38 (9), p.812-815

2012

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Utilization of silicon detectors with “ideal-diode” current-voltage characteristics

Semiconductors (Woodbury, N.Y.), 2013-02, Vol.47 (2), p.209-212

2013

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Quantum-size p- n junctions in silicon

Solid-state electronics, 1991-10, Vol.34 (10), p.1149-1156

1991

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Existence and stability of the inner boundaries of the domain of multiple hysteresis of static aerodynamic forces and moments

Fluid dynamics, 2002-03, Vol.37 (2), p.346-352

2002

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Photoresponse recovery in silicon photodiodes upon VUV irradiation

Semiconductors (Woodbury, N.Y.), 2013-02, Vol.47 (2), p.213-216

2013

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Silicon photodiodes as Thomson scattering detectors in experiments on the Tuman-3M tokamak and in bench experiments

Technical physics, 2003-08, Vol.48 (8), p.1053-1057

2003

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Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus

Semiconductors (Woodbury, N.Y.), 2007-05, Vol.41 (5), p.616-618

2007

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Low temperature impurity diffusion in SiC: Planar quantum-size p- n junctions and n- p- n transistor structures

Solid-state electronics, 1993-12, Vol.36 (12), p.1741-1747

1993

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Preliminary characterization of semiconductor detectors in the soft X-ray range using synchrotron radiation from the VEPP-4 storage ring

Surface investigation, x-ray, synchrotron and neutron techniques, 2010-02, Vol.4 (1), p.99-103

2010

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A universal pyrometer for molecular-beam epitaxy setups

Instruments and experimental techniques (New York), 2007-07, Vol.50 (4), p.572-577

2007

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Isotope-pure 28Si layers grown by VPE

Semiconductors (Woodbury, N.Y.), 2002-12, Vol.36 (12), p.1398-1399

2002

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Low temperature impurity diffusion in SiC : planar quantum-size p-n junctions and n-p-n transistor structures

Solid-state electronics, 1993, Vol.36 (12), p.1741-1747

1993

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Spatial and temporal characteristics of a 100 J laser using a solution of rhodamine 6G in ethanol

Soviet journal of quantum electronics, 1974-04, Vol.4, p.537

1974

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Parameters of silicon microdiodes fabricated by selective epitaxy

Thin solid films, 1976-01, Vol.36 (2), p.383-386

1976

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Investigation of local optical inhomogeneities in flashlamp–pumped photodissociation lasers

Soviet journal of quantum electronics, 1979-09, Vol.9 (9), p.1148-1150

1979

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Evolution of optical inhomogeneities in flashlamp-pumped photodissociation lasers

Soviet journal of quantum electronics, 1980-07, Vol.10 (7), p.872-876

1980

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Influence of excitation conditions on laser action in organic dye solutions

Soviet journal of quantum electronics, 1976-06, Vol.6 (6), p.657-660

1976

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Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

Investigation of the development of unsteady flow separation from a model swept wing

Electroluminescence in the region of interband transitions in a high-efficiency silicon light-emitting diode with a small area of the rectifying contact

Characterization of semiconductor detectors of (1–30)-keV monoenergetic and backscattered electrons

Double-grating polychromator for laser-aided plasma diagnostics

A microfluidic chip analyzer for determining neurotransmitters

Non-equilibrium impurity diffusion in silicon

Characterization of spatial homogeneity of sensitivity and radiation resistance of semiconductor detectors in the soft X-ray range

A study of vacuum-ultraviolet stability of silicon photodiodes

Utilization of silicon detectors with “ideal-diode” current-voltage characteristics

Quantum-size p- n junctions in silicon

Existence and stability of the inner boundaries of the domain of multiple hysteresis of static aerodynamic forces and moments

Photoresponse recovery in silicon photodiodes upon VUV irradiation

Silicon photodiodes as Thomson scattering detectors in experiments on the Tuman-3M tokamak and in bench experiments

Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus

Low temperature impurity diffusion in SiC: Planar quantum-size p- n junctions and n- p- n transistor structures

Preliminary characterization of semiconductor detectors in the soft X-ray range using synchrotron radiation from the VEPP-4 storage ring

A universal pyrometer for molecular-beam epitaxy setups

Isotope-pure 28Si layers grown by VPE

Low temperature impurity diffusion in SiC : planar quantum-size p-n junctions and n-p-n transistor structures

Spatial and temporal characteristics of a 100 J laser using a solution of rhodamine 6G in ethanol

Parameters of silicon microdiodes fabricated by selective epitaxy

Investigation of local optical inhomogeneities in flashlamp–pumped photodissociation lasers

Evolution of optical inhomogeneities in flashlamp-pumped photodissociation lasers

Influence of excitation conditions on laser action in organic dye solutions

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