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Timing and petrogenesis of metamafic-ultramafic rocks in the Southern Brasília orogen: Insights for a Rhyacian multi-system suprasubduction zone in the São Francisco paleocontinent (SE-Brazil)

Precambrian research, 2019-02, Vol.321, p.328-348

2019

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High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

Electronics letters, 2014-10, Vol.50 (22), p.1577-1579

2014

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Dextrose as carbon source in the culture of Litopenaeus vannamei (Boone, 1931) in a zero exchange system

Latin american journal of aquatic research, 2015-07, Vol.43 (3), p.526-533

2015

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Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Solid-state electronics, 2004-05, Vol.48 (5), p.689-695

2004

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Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates

Electronics letters, 2009, Vol.45 (8), p.424

2009

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Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN

IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.297-303

2004

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AlGaN Channel HEMT With Extremely High Breakdown Voltage

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1046-1053

2013

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Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Electronics letters, 2008, Vol.44 (23), p.1378-1379

2008

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Contribution of bioflocs to the culture of Litopenaeus vannamei post-larvae determined using stable isotopes

Aquaculture international, 2016-10, Vol.24 (5), p.1473-1487

2016

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A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

IEEE MTT-S International Microwave Symposium Digest, 2005, 2005, p.495-498

2005

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Late paleo-to neoproterozoic geochronology & metallogeny of the Tocantins Province, Brazil: An outline

Chinese science bulletin, 1998-08, Vol.43 (S1), p.123-123

Suita, M. T. F.

1998

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AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Electronics letters, 2009, Vol.45 (25), p.1346

2009

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Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Electronics letters, 2008-11, Vol.44 (23), p.1-1

2008

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Evaluation of a new X-ray stepper XRA

Microelectronic engineering, 2001-09, Vol.57, p.17-21

2001

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Overlay performance of SR lithography in 64M DRAM layers

Microelectronic engineering, 2000-06, Vol.53 (1), p.587-590

2000

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Effect of salt concentration on intracellular accumulation of lipids and triacylglyceride in marine microalgae Dunaliella cells

Journal of bioscience and bioengineering, 2006-03, Vol.101 (3), p.223-226

2006

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Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Journal of applied physics, 2003-08, Vol.94 (3), p.1662-1666

2003

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Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates

Electronics letters, 2009-04, Vol.45 (8), p.1-1

2009

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AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Electronics letters, 2009-12, Vol.45 (25), p.1-1

2009

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Comparison of characteristics of AIGaN channel HEMTs formed on SiC and sapphire substrates

Electronics letters, 2009, Vol.45 (8), p.424-426

2009

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Effects on the grieving process of the families of people who use home care stations

Gan to kagaku ryoho, 1999-12, Vol.26 Suppl 2, p.249

1999

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Electrical characterization of ZnSe epitaxial layer reactive-ion-etched by a gas mixture of ethane and hydrogen

Journal of applied physics, 1994-06, Vol.75 (12), p.8231-8233

1994

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ZnCdSeMgZnSSe laser diodes fabricated by gas-source molecular beam epitaxy

Journal of crystal growth, 1996-02, Vol.159 (1-4), p.1167-1167

1996

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Asynchronous multiple source network coding for wireless broadcasting

Numerical algebra, control and optimization, 2011, Vol.1 (4), p.577-592

2011

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Timing and petrogenesis of metamafic-ultramafic rocks in the Southern Brasília orogen: Insights for a Rhyacian multi-system suprasubduction zone in the São Francisco paleocontinent (SE-Brazil)

High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

Dextrose as carbon source in the culture of Litopenaeus vannamei (Boone, 1931) in a zero exchange system

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates

Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Contribution of bioflocs to the culture of Litopenaeus vannamei post-larvae determined using stable isotopes

A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

Late paleo-to neoproterozoic geochronology & metallogeny of the Tocantins Province, Brazil: An outline

AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Application of lightly doped drain structure to AlGaN/GaN HEMTs by ion implantation technique

Evaluation of a new X-ray stepper XRA

Overlay performance of SR lithography in 64M DRAM layers

Effect of salt concentration on intracellular accumulation of lipids and triacylglyceride in marine microalgae Dunaliella cells

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

L'animation socioculturelle professionnelle, quels rapports au politique ?

Comparison of characteristics of AlGaN channel HEMTs formed on SiC and sapphire substrates

AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

Comparison of characteristics of AIGaN channel HEMTs formed on SiC and sapphire substrates

Effects on the grieving process of the families of people who use home care stations

Electrical characterization of ZnSe epitaxial layer reactive-ion-etched by a gas mixture of ethane and hydrogen

ZnCdSeMgZnSSe laser diodes fabricated by gas-source molecular beam epitaxy

Asynchronous multiple source network coding for wireless broadcasting

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