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MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

Journal of crystal growth, 2018-04, Vol.487, p.12-16

2018

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MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Journal of crystal growth, 2018-04, Vol.487, p.50-56

2018

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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

Journal of crystal growth, 2015-12, Vol.432 (C), p.49-53

2015

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A single-pixel wireless contact lens display

Journal of micromechanics and microengineering, 2011-12, Vol.21 (12), p.125014

2011

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MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

Semiconductor science and technology, 2017-03, Vol.32 (4), p.45003

2017

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Electrical injection to contactless near-surface InGaN quantum well

Applied physics letters, 2015-08, Vol.107 (5)

2015

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Low energy electron beam induced vacancy activation in GaN

Applied physics letters, 2012-03, Vol.100 (12), p.122105-122105-3

2012

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Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation

Journal of applied physics, 2016-03, Vol.119 (9)

2016

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Diffusion injected multi-quantum well light-emitting diode structure

Applied physics letters, 2014-02, Vol.104 (8)

2014

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Application of UVA-LED based photocatalysis for plywood mill wastewater treatment

Separation and purification technology, 2015-03, Vol.143, p.1-5

2015

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Effects of low energy e-beam irradiation on cathodoluminescence from GaN

Physica status solidi. A, Applications and materials science, 2013-02, Vol.210 (2), p.383-385

2013

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Bulk plasmon-phonon polaritons in n-GaN

Journal of physics. Conference series, 2017-03, Vol.816 (1), p.12004

2017

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2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12022

2020

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Two-dimensional plasmons in a GaN/AlGaN heterojunction

Journal of physics. Conference series, 2019-03, Vol.1199 (1), p.12014

2019

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Low energy electron beam induced damage on InGaN/GaN quantum well structure

Journal of applied physics, 2011-04, Vol.109 (8), p.083105-083105-3

2011

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Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Journal of crystal growth, 2012-04, Vol.344 (1), p.59-64

2012

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Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Journal of crystal growth, 2008-11, Vol.310 (23), p.5162-5165

2008

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Excitation and decay of surface plasmon polaritons in n-GaN

Journal of physics. Conference series, 2017-06, Vol.864 (1), p.12073

2017

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Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Journal of crystal growth, 2011-01, Vol.315 (1), p.188-191

2011

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Plasmon phonon modes and optical resonances in n-GaN

Journal of physics. Conference series, 2016-02, Vol.690 (1), p.12005

2016

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Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2007-03, Vol.300 (2), p.324-329

2007

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Enhancement of near-UV GaN LED light extraction efficiency by GaN sapphire template patterning

Semiconductor science and technology, 2012-08, Vol.27 (8), p.82002

2012

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Terahertz absorption in GaN epitaxial layers under lateral electric field

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12147

2016

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Migration kinetics of ion-implanted beryllium in ZnO and GaN

Physica scripta, 2013-09, Vol.88 (3), p.35603-5

2013

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MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

A single-pixel wireless contact lens display

MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

Electrical injection to contactless near-surface InGaN quantum well

Low energy electron beam induced vacancy activation in GaN

Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation

Diffusion injected multi-quantum well light-emitting diode structure

Application of UVA-LED based photocatalysis for plywood mill wastewater treatment

Effects of low energy e-beam irradiation on cathodoluminescence from GaN

Bulk plasmon-phonon polaritons in n-GaN

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

Two-dimensional plasmons in a GaN/AlGaN heterojunction

Low energy electron beam induced damage on InGaN/GaN quantum well structure

Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Excitation and decay of surface plasmon polaritons in n-GaN

Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Plasmon phonon modes and optical resonances in n-GaN

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Enhancement of near-UV GaN LED light extraction efficiency by GaN sapphire template patterning

Terahertz absorption in GaN epitaxial layers under lateral electric field

Migration kinetics of ion-implanted beryllium in ZnO and GaN

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