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Scalability of spectrum-sliced DWDM transmission and its expansion using forward error correction

Journal of lightwave technology, 2006-03, Vol.24 (3), p.1295-1301

2006

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Failure analysis of InGaAs/GaAs strained-Layer quantum-well lasers using a digital OBIC monitor

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.211-217

2006

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Analysis of Wear-Out Degradation of a DFB Laser Using an Optical-Beam-Induced Current Monitor

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1852-1859

2007

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Noise characteristics of signal reflected from ASE-injected FP-LD in loopback access networks

Electronics letters, 2006-01, Vol.42 (2), p.111-112

2006

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Development of TO-BOSA for FTTH using new optical path alignment technique

Electronics letters, 2007-03, Vol.43 (6), p.358-359

2007

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High-power (>80 mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes

Electronics letters, 2006-10, Vol.42 (21), p.1245-1246

2006

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High-power (>50mW) and wideband (>50 nm) 1.3 μm super-luminescent diodes

Electronics letters, 2005-04, Vol.41 (8), p.500-501

2005

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Adjustment of laser facet film reflectivity by ablation etching

IEEE photonics technology letters, 2004-01, Vol.16 (1), p.42-44

2004

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Only limited effects of aminoguanidine treatment on peripheral nerve function, (Na+, K+)-ATPase activity and thrombomodulin expression in streptozotocin-induced diabetic rats

Diabetologia, 1999-06, Vol.42 (6), p.743-747

1999

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Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18

Electronics letters, 1995-04, Vol.31 (8), p.642-644

1995

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High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes

IEEE journal of quantum electronics, 2003-12, Vol.39 (12), p.1515-1520

2003

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High-power, highly reliable 1.05 mu m InGaAs strained quantum well laser diodes as pump sources for thulium-doped fibre amplifiers

Electronics letters, 2002-01, Vol.38 (1), p.45-46

2002

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Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrate

Applied physics letters, 1992-01, Vol.60 (4), p.472-473

1992

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Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organisation on GaAs (311)B substrate

Electronics letters, 1995-02, Vol.31 (3), p.209-211

1995

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High-power ( >80mW) and high-efficiency ( >30%) 1.3 µm super-luminescent diodes

Electronics letters, 2006-10, Vol.42 (21), p.1

2006

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High-power ( > 80mW) and high-efficiency ( > 30%) 1.3mum super-luminescent diodes

Electronics letters, 2006-10, Vol.42 (21), p.1245-1246

2006

Volltextzugriff (PDF)

High-power ( >80mW) and high-efficiency ( >30%) 1.3 mu m super-luminescent diodes

Electronics letters, 2006-10, Vol.42 (21), p.1-1

2006

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High-power (>80 mW) and high-efficiency (>30%) 1.3 [micro sign]m super-luminescent diodes

Electronics letters, 2006, Vol.42 (21), p.1245

2006

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Development of TO-BOSA for FTTH using new optical path alignment technique

Electronics letters, 2007-03, Vol.43 (6), p.1

2007

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Degradation analysis of 2-μm DFB laser using optical beam-induced current technique

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2644-2649

2007

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InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates

Applied physics letters, 1994-02, Vol.64 (6), p.751-753

1994

Volltextzugriff (PDF)

Erratum to "Degradation Analysis of 2 [Formula Omitted]m DFB Laser Using Optical Beam Induced Current Technique" [Oct 07 2644-2649]

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.701

2008

Volltextzugriff (PDF)

High-power highly reliable 1.02-1.06-μm InGaAs strained-quantum-well laser diodes

IEEE journal of quantum electronics, 2003-12, Vol.39 (12), p.1515-1520

2003

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Degradation Analysis of 2-[mu]m DFB Laser Using Optical Beam-Induced Current Technique

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2644-2649

2007

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Degradation Analysis of 2- \mu\hbox DFB Laser Using Optical Beam-Induced Current Technique

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2644-2649

2007

Volltextzugriff (PDF)

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Scalability of spectrum-sliced DWDM transmission and its expansion using forward error correction

Failure analysis of InGaAs/GaAs strained-Layer quantum-well lasers using a digital OBIC monitor

Analysis of Wear-Out Degradation of a DFB Laser Using an Optical-Beam-Induced Current Monitor

Noise characteristics of signal reflected from ASE-injected FP-LD in loopback access networks

Development of TO-BOSA for FTTH using new optical path alignment technique

High-power (>80 mW) and high-efficiency (>30%) 1.3 μm super-luminescent diodes

High-power (>50mW) and wideband (>50 nm) 1.3 μm super-luminescent diodes

Adjustment of laser facet film reflectivity by ablation etching

Only limited effects of aminoguanidine treatment on peripheral nerve function, (Na+, K+)-ATPase activity and thrombomodulin expression in streptozotocin-induced diabetic rats

Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18

High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes

High-power, highly reliable 1.05 mu m InGaAs strained quantum well laser diodes as pump sources for thulium-doped fibre amplifiers

Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrate

Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organisation on GaAs (311)B substrate

High-power ( >80mW) and high-efficiency ( >30%) 1.3 µm super-luminescent diodes

High-power ( > 80mW) and high-efficiency ( > 30%) 1.3mum super-luminescent diodes

High-power ( >80mW) and high-efficiency ( >30%) 1.3 mu m super-luminescent diodes

High-power (>80 mW) and high-efficiency (>30%) 1.3 [micro sign]m super-luminescent diodes

Development of TO-BOSA for FTTH using new optical path alignment technique

Degradation analysis of 2-μm DFB laser using optical beam-induced current technique

InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates

Erratum to "Degradation Analysis of 2 [Formula Omitted]m DFB Laser Using Optical Beam Induced Current Technique" [Oct 07 2644-2649]

High-power highly reliable 1.02-1.06-μm InGaAs strained-quantum-well laser diodes

Degradation Analysis of 2-[mu]m DFB Laser Using Optical Beam-Induced Current Technique

Degradation Analysis of 2- \mu\hbox DFB Laser Using Optical Beam-Induced Current Technique

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