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Amplifying characteristics of 1.55-/spl mu/m polarization-insensitive SOAs with MQW and strained-bulk active Layers for device application

Journal of lightwave technology, 2006-03, Vol.24 (3), p.1478-1485

2006

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A clinical study on suicide among schizophrenics

Psychiatry and clinical neurosciences, 2000-04, Vol.54 (2), p.173-179

2000

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A novel graphical analysis method for double crystal X-ray diffraction measurements of strained layer superlattices grown on (100) substrate

Japanese Journal of Applied Physics, 1997-08, Vol.36 (8), p.5351-5355

1997

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Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Journal of applied physics, 1998-11, Vol.84 (9), p.4775-4780

1998

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Ar ion laser-assisted metalorganic molecular beam epitaxy of InGaAsP

Japanese Journal of Applied Physics, 1993-04, Vol.32 (4A), p.L473-L475

1993

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Ar ion laser-assisted metalorganic molecular beam epitaxy of InGaAs

Japanese Journal of Applied Physics, 1991, Vol.30 (1A), p.L4-L6

1991

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Chemical beam epitaxy as a breakthrough technology for photovoltaic solar energy applications

Journal of crystal growth, 1994-03, Vol.136 (1), p.29-36

1994

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Low-threshold InGaAs/InGaAsP multiple quantum well lasers grown by chemical beam epitaxy

Japanese Journal of Applied Physics, 1991-10, Vol.30 (10A), p.L1741-L1743

1991

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Metalorganic molecular beam epitaxy of strain-compensated InAsP/InGaAsP multi-quantum-well lasers

Journal of applied physics, 1996-02, Vol.79 (3), p.1233-1237

1996

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Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy

Journal of crystal growth, 1992-08, Vol.121 (4), p.579-586

1992

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Lateral band-gap control of InGaAsP multiple quantum wells by laser-assisted metalorganic molecular beam epitaxy for a multiwavelength laser array

Applied physics letters, 1994-02, Vol.64 (8), p.983-985

1994

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Double heterostructure GaAs tunnel junction for a AlGaAs/GaAs tandem solar cell

Japanese Journal of Applied Physics, 1988-02, Vol.27 (2), p.269-272

1988

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MOMBE growth of InAsP laser materials

Journal of crystal growth, 1996-07, Vol.164 (1), p.434-441

Sugiura, Hideo

1996

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Growth rate suppression of InGaAs film grown by laser-assisted chemical beam epitaxy

Applied physics letters, 1992-09, Vol.61 (12), p.1423-1425

1992

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Amplifying characteristics of 1.55-μm polarization-insensitive SOAs with MQW and strained-bulk active layers for device application

Journal of lightwave technology, 2006-03, Vol.24 (3), p.1478-1485

2006

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20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy

Applied physics letters, 1987-12, Vol.51 (24), p.1998-2000

1987

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High-Performance 1.5-µm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)

Japanese Journal of Applied Physics, 1992-11, Vol.31 (11A), p.L1549

1992

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Laser-assisted MOMBE growth of GaAs using tri-isobutyl gallium

Japanese Journal of Applied Physics, 1989-11, Vol.28 (11), p.L1883-L1885

1989

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2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power

IEEE photonics technology letters, 1999-01, Vol.11 (1), p.33-35

1999

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Characterization and surface cleaning technique for MOCVD growth-interrupted GaAs films

Japanese Journal of Applied Physics, 1985-01, Vol.24 (11), p.1493-1497

1985

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Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

IEEE journal of quantum electronics, 1996-08, Vol.32 (8), p.1478-1486

1996

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Reversal of Zeeman splitting in InGaAs/InP quantum wires in high magnetic field

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1933-1936

1997

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Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP

Japanese Journal of Applied Physics, 1990-03, Vol.29 (3R), p.475

1990

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Mechanism of GaAs Selective Growth in Ar + Laser-Assited Metalorganic Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 1990-01, Vol.29 (1A), p.L1

1990

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Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells

Journal of crystal growth, 2000-03, Vol.210 (4), p.463-470

2000

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Amplifying characteristics of 1.55-/spl mu/m polarization-insensitive SOAs with MQW and strained-bulk active Layers for device application

A clinical study on suicide among schizophrenics

A novel graphical analysis method for double crystal X-ray diffraction measurements of strained layer superlattices grown on (100) substrate

Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Ar ion laser-assisted metalorganic molecular beam epitaxy of InGaAsP

Ar ion laser-assisted metalorganic molecular beam epitaxy of InGaAs

Chemical beam epitaxy as a breakthrough technology for photovoltaic solar energy applications

Low-threshold InGaAs/InGaAsP multiple quantum well lasers grown by chemical beam epitaxy

Metalorganic molecular beam epitaxy of strain-compensated InAsP/InGaAsP multi-quantum-well lasers

Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy

Lateral band-gap control of InGaAsP multiple quantum wells by laser-assisted metalorganic molecular beam epitaxy for a multiwavelength laser array

Double heterostructure GaAs tunnel junction for a AlGaAs/GaAs tandem solar cell

MOMBE growth of InAsP laser materials

Growth rate suppression of InGaAs film grown by laser-assisted chemical beam epitaxy

Amplifying characteristics of 1.55-μm polarization-insensitive SOAs with MQW and strained-bulk active layers for device application

20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy

High-Performance 1.5-µm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)

Laser-assisted MOMBE growth of GaAs using tri-isobutyl gallium

2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power

Characterization and surface cleaning technique for MOCVD growth-interrupted GaAs films

Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

Reversal of Zeeman splitting in InGaAs/InP quantum wires in high magnetic field

Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP

Mechanism of GaAs Selective Growth in Ar + Laser-Assited Metalorganic Molecular Beam Epitaxy

Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells

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