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Measurement of field-hydraulic soil properties using suction infiltrometer for soil-based pavement

Japanese Geotechnical Society Special Publication, 2019-04, Vol.7 (2), p.84-89

2019

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High-performance bulk CMOS technology for 65/45 nm nodes

Solid-state electronics, 2006, Vol.50 (1), p.2-9

Sugii, T.

2006

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Demonstration of non-volatile working memory through interface engineering in STT-MRAM

2012 Symposium on VLSI Technology (VLSIT), 2012, p.59-60

2012

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MgO Based Magnetic Tunnel Junctions With Co20Fe60B20 Sensing Layer for Magnetic Field Sensors

IEEE transactions on magnetics, 2013, Vol.49 (7), p.3878-3881

2013

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MgO Based Magnetic Tunnel Junctions With Co Fe B Sensing Layer for Magnetic Field Sensors

IEEE transactions on magnetics, 2013-07, Vol.49 (7), p.3878-3881

2013

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A thermal activation view of low voltage impact ionization in MOSFETs

IEEE electron device letters, 2002-09, Vol.23 (9), p.550-552

2002

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Dynamic threshold pass-transistor logic for improved delay at lower power supply voltages

IEEE journal of solid-state circuits, 1999-01, Vol.34 (1), p.85-89

1999

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A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]

IEEE transactions on electron devices, 1999-01, Vol.46 (1), p.117-124

1999

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Analytical threshold voltage model for short channel double-gate SOI MOSFETs

IEEE transactions on electron devices, 1996-07, Vol.43 (7), p.1166-1168

1996

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Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's

IEEE electron device letters, 1994-11, Vol.15 (11), p.466-468

1994

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Enhanced substrate current in SOI MOSFETs

IEEE electron device letters, 2002-05, Vol.23 (5), p.282-284

2002

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A molecular-dynamics study of lipid bilayers: Effects of the hydrocarbon chain length on permeability

The Journal of chemical physics, 2005-11, Vol.123 (18), p.184714-184714-8

2005

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Self-aligned control of threshold voltages in sub-0.2-μm MOSFETs

IEEE transactions on electron devices, 1998-10, Vol.45 (10), p.2161-2166

1998

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Impact of shallow source/drain on the short-channel characteristics of pMOSFETs

IEEE electron device letters, 1999-02, Vol.20 (2), p.95-96

1999

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Novel polysilicon gate engineering with a laser thermal process for sub-40 nm CMOS devices

Solid-state electronics, 2004-10, Vol.48 (10), p.1837-1842

2004

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Decaborane (B/sub 10/H/sub 14/) ion implantation technology for sub-0.1-μm PMOSFET's

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.683-689

1999

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Continued growth in CMOS beyond 0.10 μm

Solid-state electronics, 2002-03, Vol.46 (3), p.329-336

2002

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High-performance bulk CMOS technology for 65/45nm nodes

Solid-state electronics, 2006-01, Vol.50 (1), p.2-9

Sugii, T.

2006

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MOSFET current drive optimization using silicon nitride capping layer for 65-nm technology node

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004, 2004, p.54-55

2004

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Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits

IEEE electron device letters, 1997-03, Vol.18 (3), p.99-101

1997

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Conversion of methylcyclohexane over Ir/H-β zeolite in the presence of hydrogen

Applied catalysis. A, General, 2006-09, Vol.312, p.45-51

2006

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Reliability study of magnetic tunnel junction with naturally oxidized MgO barrier

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.2A.3.1-2A.3.5

2012

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Batteryless sensorless bicycle speed recorder with hub dynamo and STT-MRAM

2015 IEEE SENSORS, 2015, p.1-4

2015

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Multiple Sb ion implantation for deep-submicron pMOS channel doping

IEEE transactions on electron devices, 1997-03, Vol.44 (3), p.448-454

1997

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Counter doping into uniformly and heavily doped channel region of sub-0.1 μm SOI MOSFETs

IEEE electron device letters, 1996-01, Vol.17 (1), p.1-3

1996

Volltextzugriff (PDF)

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Measurement of field-hydraulic soil properties using suction infiltrometer for soil-based pavement

High-performance bulk CMOS technology for 65/45 nm nodes

Demonstration of non-volatile working memory through interface engineering in STT-MRAM

MgO Based Magnetic Tunnel Junctions With Co20Fe60B20 Sensing Layer for Magnetic Field Sensors

MgO Based Magnetic Tunnel Junctions With Co Fe B Sensing Layer for Magnetic Field Sensors

A thermal activation view of low voltage impact ionization in MOSFETs

Dynamic threshold pass-transistor logic for improved delay at lower power supply voltages

A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]

Analytical threshold voltage model for short channel double-gate SOI MOSFETs

Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's

Enhanced substrate current in SOI MOSFETs

A molecular-dynamics study of lipid bilayers: Effects of the hydrocarbon chain length on permeability

Self-aligned control of threshold voltages in sub-0.2-μm MOSFETs

Impact of shallow source/drain on the short-channel characteristics of pMOSFETs

Novel polysilicon gate engineering with a laser thermal process for sub-40 nm CMOS devices

Decaborane (B/sub 10/H/sub 14/) ion implantation technology for sub-0.1-μm PMOSFET's

Continued growth in CMOS beyond 0.10 μm

High-performance bulk CMOS technology for 65/45nm nodes

MOSFET current drive optimization using silicon nitride capping layer for 65-nm technology node

Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits

Conversion of methylcyclohexane over Ir/H-β zeolite in the presence of hydrogen

Reliability study of magnetic tunnel junction with naturally oxidized MgO barrier

Batteryless sensorless bicycle speed recorder with hub dynamo and STT-MRAM

Multiple Sb ion implantation for deep-submicron pMOS channel doping

Counter doping into uniformly and heavily doped channel region of sub-0.1 μm SOI MOSFETs

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