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Determination of stress components in 4H-SiC power devices via Raman spectroscopy

Journal of applied physics, 2017-11, Vol.122 (19)

2017

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Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors

Journal of electronic materials, 2020-09, Vol.49 (9), p.5085-5090

2020

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Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC

Journal of applied physics, 2024-05, Vol.135 (18)

2024

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Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Journal of applied physics, 2019-12, Vol.126 (21)

2019

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Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Journal of applied physics, 2021-04, Vol.129 (16)

2021

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Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy

Journal of applied physics, 2013-12, Vol.114 (23)

2013

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Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy

Applied physics express, 2018-07, Vol.11 (7), p.75501

2018

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Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Minority-carrier dynamics in β-gallium oxide probed by depth-resolved cathodoluminescence

Journal of physics. D, Applied physics, 2022-11, Vol.55 (46), p.465101

2022

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Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O3

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.751-756

2022

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Thermal stress analysis in die-attached β-Ga2O3 using Raman spectroscopy

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1003

2023

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Thermal stress analysis in die-attached β-Ga 2 O 3 using Raman spectroscopy

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1003

2023

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Measurement of the properties of GaN layers using terahertz time‐domain spectroscopic ellipsometry

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration

Japanese Journal of Applied Physics, 2014-05, Vol.53 (5S2), p.5-1-05GE04-6

2014

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Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography

Journal of electronic materials, 2022-04, Vol.51 (4), p.1541-1547

2022

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Characterization of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps

Journal of the Japanese Association for Crystal Growth, 2020, Vol.47(3), pp.47-3-04

2020

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Theoretical and experimental Raman study for mechanical stress in die-attach process

Microelectronics and reliability, 2021-06, Vol.121, p.114132, Article 114132

2021

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Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DP15-04DP15-4

2010

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Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Materials science forum, 2009-01, Vol.600-603, p.963-966

2009

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Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Materials science forum, 2009-01, Vol.600-603, p.353-356

2009

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3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Correlation between crystal warpage and swelling of 4H-SiC through implantation and annealing

Semiconductor science and technology, 2020-10, Vol.35 (10), p.105008

2020

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Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

Journal of physics. D, Applied physics, 2021-12, Vol.54 (48)

2021

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Luminescence from AlGaN/GaN HEMT structures by very-low-energy (100 eV) electron beams using beam deceleration technique

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.10902

2019

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Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method

Materials science forum, 2019-07, Vol.963, p.259-262

2019

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Determination of stress components in 4H-SiC power devices via Raman spectroscopy

Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors

Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC

Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy

Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy

Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy

Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence

Minority-carrier dynamics in β-gallium oxide probed by depth-resolved cathodoluminescence

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O3

Thermal stress analysis in die-attached β-Ga2O3 using Raman spectroscopy

Thermal stress analysis in die-attached β-Ga 2 O 3 using Raman spectroscopy

Measurement of the properties of GaN layers using terahertz time‐domain spectroscopic ellipsometry

Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration

Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography

Characterization of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps

Theoretical and experimental Raman study for mechanical stress in die-attach process

Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography

Correlation between crystal warpage and swelling of 4H-SiC through implantation and annealing

Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

Luminescence from AlGaN/GaN HEMT structures by very-low-energy (100 eV) electron beams using beam deceleration technique

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method

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