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A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices

IEEE electron device letters, 2011-08, Vol.32 (8), p.1047-1049

2011

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Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry

Thin solid films, 2011-02, Vol.519 (9), p.2811-2816

2011

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Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

Microelectronic engineering, 2007-09, Vol.84 (9), p.2230-2234

2007

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Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Journal of applied physics, 2004-12, Vol.96 (12), p.7485-7491

2004

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Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

IEEE electron device letters, 2011-01, Vol.32 (1), p.75-77

2011

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Silicon nanowire NVM with high-k gate dielectric stack

Microelectronic engineering, 2009-07, Vol.86 (7), p.1957-1960

2009

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Silicon nanowire NVM cell using high- k dielectric charge storage layer

Microelectronic engineering, 2008-12, Vol.85 (12), p.2403-2405

2008

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Ultrathin gate oxide reliability: physical models, statistics, and characterization

IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.958-971

Suehle, J.S.

2002

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Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

Applied physics letters, 2010-02, Vol.96 (5)

2010

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On the “U-shaped” continuum of band edge states at the Si/SiO2 interface

Applied physics letters, 2011-11, Vol.99 (22)

2011

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Silicon nanowire on oxide/nitride/oxide for memory application

Nanotechnology, 2007-06, Vol.18 (23), p.235204-235204 (4)

2007

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Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

Applied physics letters, 2011-06, Vol.98 (23)

2011

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Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1989-2000

1997

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Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

Microelectronics and reliability, 2005-03, Vol.45 (3), p.419-426

2005

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Heavy-ion-induced soft breakdown of thin gate oxides

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.1913-1916

2001

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Microhotplate platforms for chemical sensor research

Sensors and actuators. B, Chemical, 2001-06, Vol.77 (1), p.579-591

2001

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Hybrid postprocessing etching for CMOS-compatible MEMS

Journal of microelectromechanical systems, 1997-12, Vol.6 (4), p.363-372

1997

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Fast temperature programmed sensing for micro-hotplate gas sensors

IEEE electron device letters, 1995-06, Vol.16 (6), p.286-288

1995

Volltextzugriff (PDF)

Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.121-128

2000

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Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing

IEEE electron device letters, 1993-03, Vol.14 (3), p.118-120

1993

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Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.601-608

2000

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Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.95-101

2004

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Interface characterization of molecular-monolayer/SiO2 based molecular junctions

Solid-state electronics, 2006-06, Vol.50 (6), p.1088-1096

2006

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Mechanism for reduced NBTI effect under pulsed bias stress conditions

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.689-690

2004

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New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device

2010 Symposium on VLSI Technology, 2010, p.75-76

2010

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A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices

Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry

Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

Silicon nanowire NVM with high-k gate dielectric stack

Silicon nanowire NVM cell using high- k dielectric charge storage layer

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

On the “U-shaped” continuum of band edge states at the Si/SiO2 interface

Silicon nanowire on oxide/nitride/oxide for memory application

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

Heavy-ion-induced soft breakdown of thin gate oxides

Microhotplate platforms for chemical sensor research

Hybrid postprocessing etching for CMOS-compatible MEMS

Fast temperature programmed sensing for micro-hotplate gas sensors

Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing

Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

Acceleration factors and mechanistic study of progressive breakdown in small area ultra-thin gate oxides

Interface characterization of molecular-monolayer/SiO2 based molecular junctions

Mechanism for reduced NBTI effect under pulsed bias stress conditions

New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device

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