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Tunable Reverse-Biased Graphene/Silicon Heterojunction Schottky Diode Sensor

Small (Weinheim an der Bergstrasse, Germany), 2014-04, Vol.10 (8), p.1555-1565

2014

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Functionalized graphene/silicon chemi-diode H 2 sensor with tunable sensitivity

Nanotechnology, 2014-03, Vol.25 (12), p.125501

2014

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Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4° off-axis 4H–SiC

Journal of crystal growth, 2013-05, Vol.371, p.94-101

2013

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Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth

Journal of crystal growth, 2015-05, Vol.418, p.7-14

2015

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Basal Plane Dislocation Mitigation in SiC Epitaxial Growth by Nondestructive Substrate Treatment

Crystal growth & design, 2012-04, Vol.12 (4), p.1703-1707

2012

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Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers

Journal of crystal growth, 2011-04, Vol.320 (1), p.95-102

2011

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Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy

Journal of crystal growth, 2013-10, Vol.380, p.61-67

2013

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Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model

Journal of physics. D, Applied physics, 2014-07, Vol.47 (29), p.295102-9

2014

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Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors

IEEE transactions on nuclear science, 2011-08, Vol.58 (4), p.1992-1999

2011

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Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

Solid state communications, 2011-04, Vol.151 (7), p.532-535

2011

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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Journal of crystal growth, 2011-02, Vol.316 (1), p.60-66

2011

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Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Applied physics letters, 2009-03, Vol.94 (9)

2009

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Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

Materials letters, 2011-03, Vol.65 (5), p.911-914

2011

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Micro/nanoscale mechanical and tribological characterization of SiC for orthopedic applications

Journal of biomedical materials research, 2005-02, Vol.72B (2), p.353-361

2005

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Layered GaTe Crystals for Radiation Detectors

IEEE transactions on nuclear science, 2011-08, Vol.58 (4), p.1981-1986

2011

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Investigation on barrier inhomogeneities in 4H-SiC Schottky rectifiers

Physica status solidi. A, Applications and materials science, 2006-02, Vol.203 (3), p.643-650

2006

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Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications

IEEE electron device letters, 2009-11, Vol.30 (11), p.1182-1184

2009

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Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Microelectronics and reliability, 2009-01, Vol.49 (1), p.32-37

2009

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Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases

Materials science forum, 2012, Vol.717-720, p.117-120

2012

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Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth

Materials science forum, 2012, Vol.717-720, p.153-156

2012

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Site Specific TEM Specimen Preparation for Characterization of Extended Defects in 4H-SiC Epilayers

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.344-345

2014

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An Approach to Trace Defects Propagation during SiC Epitaxy

Materials science forum, 2014-02, Vol.778-780, p.147-150

2014

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Design rules for field plate edge termination in SiC Schottky diodes

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2659-2664

2001

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Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4ADG off-axis 4HaSiC

Journal of crystal growth, 2013-05, Vol.371, p.94-101

2013

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Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace

Materials science forum, 2009, Vol.600-603, p.27-30

2009

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Tunable Reverse-Biased Graphene/Silicon Heterojunction Schottky Diode Sensor

Functionalized graphene/silicon chemi-diode H 2 sensor with tunable sensitivity

Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4° off-axis 4H–SiC

Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth

Basal Plane Dislocation Mitigation in SiC Epitaxial Growth by Nondestructive Substrate Treatment

Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers

Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy

Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model

Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors

Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

Micro/nanoscale mechanical and tribological characterization of SiC for orthopedic applications

Layered GaTe Crystals for Radiation Detectors

Investigation on barrier inhomogeneities in 4H-SiC Schottky rectifiers

Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications

Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases

Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth

Site Specific TEM Specimen Preparation for Characterization of Extended Defects in 4H-SiC Epilayers

An Approach to Trace Defects Propagation during SiC Epitaxy

Design rules for field plate edge termination in SiC Schottky diodes

Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4ADG off-axis 4HaSiC

Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace

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