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Impact ionization coefficients and critical electric field in GaN

Journal of applied physics, 2021-05, Vol.129 (18)

2021

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Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3326-3333

2015

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Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate

Applied physics letters, 2021-01, Vol.118 (1)

2021

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Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Applied physics letters, 2023-01, Vol.122 (1)

2023

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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Applied physics letters, 2019-09, Vol.115 (14)

Bockowski, Michal

2019

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Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.88-95

2022

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Progress on and challenges of p-type formation for GaN power devices

Journal of applied physics, 2020-09, Vol.128 (9)

2020

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Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.414-418

2012

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RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Electronics letters, 2023-05, Vol.59 (10), p.n/a

2023

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Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers

Applied physics express, 2024-01, Vol.17 (1), p.11007

2024

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Temperature dependence of the local electronic properties of n-type GaN crystals by micro-Raman spectroscopy and dielectric dispersion at high temperatures

Japanese Journal of Applied Physics, 2021-04, Vol.60 (4), p.48002

2021

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Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3

Applied physics express, 2024-08, Vol.17 (8), p.081003

2024

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Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper

Electronics letters, 2021-11, Vol.57 (24), p.948-949

2021

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Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure

Applied physics express, 2024-01, Vol.17 (1), p.16502

2024

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Determination of Surface Recombination Velocity From Current-Voltage Characteristics in SiC p-n Diodes

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4786-4791

2018

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High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

Journal of applied physics, 2012-02, Vol.111 (3), p.033515-033515-5

2012

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Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Journal of applied physics, 2009-07, Vol.106 (1)

2009

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Analytical model for reduction of deep levels in SiC by thermal oxidation

Journal of applied physics, 2012-03, Vol.111 (5), p.053710-053710-9

2012

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Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

Applied physics express, 2018-07, Vol.11 (7), p.71002

2018

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Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

Applied physics express, 2024-03, Vol.17 (3), p.36501

2024

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Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Applied physics express, 2019-11, Vol.12 (11), p.111005

2019

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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Journal of applied physics, 2020-03, Vol.127 (10)

2020

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Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

Philosophical magazine (Abingdon, England), 2017-10, Vol.97 (30), p.2736-2752

2017

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Mg-implanted bevel edge termination structure for GaN power device applications

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Impact ionization coefficients and critical electric field in GaN

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate

Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

Progress on and challenges of p-type formation for GaN power devices

Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography

Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers

Temperature dependence of the local electronic properties of n-type GaN crystals by micro-Raman spectroscopy and dielectric dispersion at high temperatures

Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3

Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper

Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure

Determination of Surface Recombination Velocity From Current-Voltage Characteristics in SiC p-n Diodes

High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Analytical model for reduction of deep levels in SiC by thermal oxidation

Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

Mg-implanted bevel edge termination structure for GaN power device applications

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