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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Materials, 2020-02, Vol.13 (4), p.938

2020

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SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Micromachines (Basel), 2022-02, Vol.13 (2), p.330

2022

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Hardware implementation of memristor-based artificial neural networks

Nature communications, 2024-03, Vol.15 (1), p.1974-1974, Article 1974

2024

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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

Suñé, Jordi

2020

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A cell-based clustering model for the reset statistics in RRAM

Applied physics letters, 2017-03, Vol.110 (12)

2017

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Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics

Journal of applied physics, 2013-07, Vol.114 (1)

2013

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Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Scientific reports, 2013-10, Vol.3 (1), p.2929-2929, Article 2929

2013

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Quantum-size effects in hafnium-oxide resistive switching

Applied physics letters, 2013-05, Vol.102 (18), p.183505

2013

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Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Journal of applied physics, 2014-06, Vol.115 (24)

2014

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Conductance Quantization in Resistive Random Access Memory

Nanoscale Research Letters, 2015-12, Vol.10 (1), p.420-420, Article 420

2015

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Electron transport through broken down ultra-thin SiO2 layers in MOS devices

Microelectronics and reliability, 2004-01, Vol.44 (1), p.1-23

2004

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Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

ACS applied materials & interfaces, 2014-04, Vol.6 (7), p.5056-5060

2014

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Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105 , 193501 (2014)]

Applied physics letters, 2015-04, Vol.106 (15)

2015

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A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

IEEE electron device letters, 2013-08, Vol.34 (8), p.999-1001

2013

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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

Scientific reports, 2017-09, Vol.7 (1), p.11204-11, Article 11204

2017

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Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films

ACS applied materials & interfaces, 2018-09, Vol.10 (36), p.30522-30531

2018

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Analysis and modeling of resistive switching statistics

Journal of applied physics, 2012-04, Vol.111 (7), p.074508-074508-19

2012

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Reset Statistics of NiO-Based Resistive Switching Memories

IEEE electron device letters, 2011-11, Vol.32 (11), p.1570-1572

2011

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On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (5), p.1261

2021

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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3349-3355

2019

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Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

Advanced quantum technologies (Online), 2023-07, Vol.6 (7), p.n/a

2023

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Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Hardware implementation of memristor-based artificial neural networks

Memristors for Neuromorphic Circuits and Artificial Intelligence Applications

A cell-based clustering model for the reset statistics in RRAM

Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics

Standards for the Characterization of Endurance in Resistive Switching Devices

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Quantum-size effects in hafnium-oxide resistive switching

Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Conductance Quantization in Resistive Random Access Memory

Electron transport through broken down ultra-thin SiO2 layers in MOS devices

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105 , 193501 (2014)]

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films

Analysis and modeling of resistive switching statistics

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

Reset Statistics of NiO-Based Resistive Switching Memories

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard

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