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Realization of higher-order topology in bilayer asymmetric Su–Schrieffer–Heeger topological electric circuits

Applied physics letters, 2024-02, Vol.124 (7)

2024

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GeSn p-i-n photodetector for all telecommunication bands detection

Optics express, 2011-03, Vol.19 (7), p.6400-6405

2011

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Realization of the square-root higher-order topology in decorated Su–Schrieffer–Heeger electric circuits

Applied physics letters, 2023-07, Vol.123 (4)

2023

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High-responsivity GeSn short-wave infrared p-i-n photodetectors

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Epitaxial growth and thermal stability of Ge1―xSnx alloys on Ge-buffered Si(0 0 1) substrates

Journal of crystal growth, 2011-02, Vol.317 (1), p.43-46

2011

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The contributions of composition and strain to the phonon shift in Ge1―xSnx alloys

Solid state communications, 2011-04, Vol.151 (8), p.647-650

2011

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Tunable Plasmonic Talbot Effect Based on Graphene Monolayer

Applied sciences, 2020-07, Vol.10 (14), p.4782

2020

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Strain field mapping of dislocations in a Ge/Si heterostructure

PloS one, 2013-04, Vol.8 (4), p.e62672

2013

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Multiple Fano Resonances with Tunable Electromagnetic Properties in Graphene Plasmonic Metamolecules

Nanomaterials (Basel, Switzerland), 2020-01, Vol.10 (2), p.236

2020

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Study of triisopropylsilyl pentacene thin film and its interfacial properties for device applications

Thin solid films, 2015-06, Vol.584, p.359-362

2015

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Electroluminescence from Ge on Si substrate at room temperature

Applied physics letters, 2009-08, Vol.95 (9), p.092102-092102-3

2009

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Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

Materials, 2013-05, Vol.6 (6), p.2130-2142

2013

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“Fast” Plasmons Propagating in Graphene Plasmonic Waveguides with Negative Index Metamaterial Claddings

Nanomaterials (Basel, Switzerland), 2020-08, Vol.10 (9), p.1637

2020

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Negative Group Velocity Plasmons Propagating in Waveguides Composed of Graphene Metamaterials

IEEE access, 2020-01, Vol.8, p.1-1

2020

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Group Velocity Modulation and Light Field Focusing of the Edge States in Chirped Valley Graphene Plasmonic Metamaterials

Nanomaterials (Basel, Switzerland), 2021-07, Vol.11 (7), p.1808

2021

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Dopant Segregation and Nickel Stanogermanide Contact Formation on p+Ge0.947Sn0.053 Source/Drain

IEEE electron device letters, 2012-05, Vol.33 (5), p.634-636

2012

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Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1640-1648

2013

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Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Solid-state electronics, 2013-05, Vol.83, p.66-70

2013

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Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate

Thin solid films, 2012-06, Vol.520 (16), p.5361-5366

2012

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Observation of the corner state in three-dimensional pyrochlore topological electric circuits

Journal of physics. D, Applied physics, 2023-12, Vol.56 (50), p.505305

2023

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Investigation of three topological edge states in honeycomb lattices based on graphene plasmonic crystal

Journal of physics. D, Applied physics, 2022-07, Vol.55 (27), p.275102

2022

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Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal

IEEE electron device letters, 2012-11, Vol.33 (11), p.1529-1531

2012

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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 ^\hbox\ \hbox\hbox Passivation

IEEE electron device letters, 2013-03, Vol.34 (3), p.339-341

2013

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An improved curved grating demultiplexer based on silicon-on-insulator platform

Optics communications, 2023-12, Vol.549, p.129931, Article 129931

2023

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Dopant Segregation and Nickel Stanogermanide Contact Formation on \hbox^ \hbox\hbox Source/Drain

IEEE electron device letters, 2012-05, Vol.33 (5), p.634-636

2012

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Realization of higher-order topology in bilayer asymmetric Su–Schrieffer–Heeger topological electric circuits

GeSn p-i-n photodetector for all telecommunication bands detection

Realization of the square-root higher-order topology in decorated Su–Schrieffer–Heeger electric circuits

High-responsivity GeSn short-wave infrared p-i-n photodetectors

Epitaxial growth and thermal stability of Ge1―xSnx alloys on Ge-buffered Si(0 0 1) substrates

The contributions of composition and strain to the phonon shift in Ge1―xSnx alloys

Tunable Plasmonic Talbot Effect Based on Graphene Monolayer

Strain field mapping of dislocations in a Ge/Si heterostructure

Multiple Fano Resonances with Tunable Electromagnetic Properties in Graphene Plasmonic Metamolecules

Study of triisopropylsilyl pentacene thin film and its interfacial properties for device applications

Electroluminescence from Ge on Si substrate at room temperature

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

“Fast” Plasmons Propagating in Graphene Plasmonic Waveguides with Negative Index Metamaterial Claddings

Negative Group Velocity Plasmons Propagating in Waveguides Composed of Graphene Metamaterials

Group Velocity Modulation and Light Field Focusing of the Edge States in Chirped Valley Graphene Plasmonic Metamaterials

Dopant Segregation and Nickel Stanogermanide Contact Formation on p+Ge0.947Sn0.053 Source/Drain

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate

Observation of the corner state in three-dimensional pyrochlore topological electric circuits

Investigation of three topological edge states in honeycomb lattices based on graphene plasmonic crystal

Germanium-Tin \hbox^\hbox Junction Formed Using Phosphorus Ion Implant and 400 ^ \hbox Rapid Thermal Anneal

Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 ^\hbox\ \hbox\hbox Passivation

An improved curved grating demultiplexer based on silicon-on-insulator platform

Dopant Segregation and Nickel Stanogermanide Contact Formation on \hbox^ \hbox\hbox Source/Drain

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