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PAC-Bayesian framework based drop-path method for 2D discriminative convolutional network pruning

Multidimensional systems and signal processing, 2020-07, Vol.31 (3), p.793-827

2020

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Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Applied physics letters, 2022-05, Vol.120 (22)

2022

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Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures

Applied physics letters, 2023-09, Vol.123 (13)

2023

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An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Applied physics letters, 2024-04, Vol.124 (16)

2024

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Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering

Materials & design, 2023-11, Vol.235, p.112444, Article 112444

2023

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Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV

Applied physics letters, 2022-02, Vol.120 (9)

2022

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Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection

Applied physics letters, 2022-06, Vol.120 (23)

2022

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CLMIP: cross-layer manifold invariance based pruning method of deep convolutional neural network for real-time road type recognition

Multidimensional systems and signal processing, 2021, Vol.32 (1), p.239-262

2021

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Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

IEEE photonics journal, 2023-06, Vol.15 (3), p.1-5

2023

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High quality GaN films on miscut (111) diamond substrates through non-c orientation suppression

Results in physics, 2023-04, Vol.47, p.106368, Article 106368

2023

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Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells

Journal of semiconductors, 2023-04, Vol.44 (4), p.42801-96

2023

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Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer

Results in physics, 2023-08, Vol.51, p.106714, Article 106714

2023

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Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids

Science China. Technological sciences, 2021-07, Vol.64 (7), p.1583-1588

2021

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Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation

Optics express, 2023-06, Vol.31 (13), p.20850-20860

2023

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High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High ION/IOFF and High Threshold Voltage

IEEE electron device letters, 2022-05, Vol.43 (5), p.705-708

2022

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Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density

IEEE electron device letters, 2023-12, Vol.44 (12), p.1939-1942

2023

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Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer

Optics letters, 2022-08, Vol.47 (16), p.4139

2022

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A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High I ON / I OFF Ratio

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4433-4436

2024

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A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4433-4436

2024

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The enhanced GaN deposition on highly N-incorporated diamond substrate

Materials letters, 2024-09, Vol.371, p.136865, Article 136865

2024

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Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes

IEEE electron device letters, 2021-09, Vol.42 (9), p.1346-1349

2021

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Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4740-4744

2024

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The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

Journal of alloys and compounds, 2024-01, Vol.970, p.172560, Article 172560

2024

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The Email Author Identification System Based on Support Vector Machine (SVM) and Analytic Hierarchy Process (AHP)

IAENG international journal of computer science, 2019-05, Vol.46 (2), p.178

2019

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Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate

Materials letters, 2023-11, Vol.351, p.135097, Article 135097

2023

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PAC-Bayesian framework based drop-path method for 2D discriminative convolutional network pruning

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering

Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV

Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection

CLMIP: cross-layer manifold invariance based pruning method of deep convolutional neural network for real-time road type recognition

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

High quality GaN films on miscut (111) diamond substrates through non-c orientation suppression

Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells

Enhanced performance of GaN-based ultraviolet light emitting diodes with ITO/graphene/ITO transparent conductive layer

Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids

Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation

High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High ION/IOFF and High Threshold Voltage

Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density

Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer

A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High I ON / I OFF Ratio

A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High ION/IOFF Ratio

The enhanced GaN deposition on highly N-incorporated diamond substrate

Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes

Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes With Broadening Current Spreading Capability

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

The Email Author Identification System Based on Support Vector Machine (SVM) and Analytic Hierarchy Process (AHP)

Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate

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