UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Applied physics letters, 2003-03, Vol.82 (11), p.1736-1738

2003

Volltextzugriff (PDF)

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

Applied physics letters, 2003-01, Vol.82 (3), p.385-387

2003

Volltextzugriff (PDF)

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

Solid state communications, 2001-02, Vol.117 (10), p.571-575

2001

Volltextzugriff (PDF)

Molecular beam epitaxial growth of high-quality GaN nanocolumns

Journal of crystal growth, 2006-01, Vol.287 (2), p.500-503

2006

Volltextzugriff (PDF)

Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

Journal of applied physics, 1999-07, Vol.86 (1), p.329-337

1999

Volltextzugriff (PDF)

Hydrogen incorporation, diffusivity and evolution in bulk ZnO

Solid-state electronics, 2003-12, Vol.47 (12), p.2255-2259

2003

Volltextzugriff (PDF)

Electrochemical Schottky characteristics of ZnO for capacitance-voltage measurements

Journal of electronic materials, 2001-12, Vol.30 (12), p.L40-L42

STUTZ, C. E

2001

Volltextzugriff (PDF)

Evidence for a stable excitonic ground state in a spatially separated electron-hole system

Physical review letters, 1995-01, Vol.74 (3), p.450-453

1995

Volltextzugriff (PDF)

Photoelectrochemical capacitance-voltage measurements of 4H-SiC

Journal of electronic materials, 1998-12, Vol.27 (12), p.L81-L83

STUTZ, C. E

1998

Volltextzugriff (PDF)

New AsGa related center in GaAs

Physical review letters, 1993-01, Vol.70 (4), p.465-468

1993

Volltextzugriff (PDF)

On Hall scattering factors for holes in GaAs

Journal of applied physics, 1996-08, Vol.80 (3), p.1913-1915

1996

Volltextzugriff (PDF)

Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures

Journal of applied physics, 1994-07, Vol.76 (2), p.1029-1032

1994

Volltextzugriff (PDF)

Alloy scattering in p-type AlxGa1-xAs

Journal of applied physics, 1992, Vol.71 (1), p.260-266

1992

Volltextzugriff (PDF)

Effect of parasitics on electrochemical capacitance-voltage profiling of pseudomorphic high electron mobility transistor structures

Journal of electronic materials, 1997-07, Vol.26 (7), p.863-867

1997

Volltextzugriff (PDF)

Charge accumulation of quantum dots at room temperature

Journal of electronic materials, 2000-11, Vol.29 (11), p.L29-L31

2000

Volltextzugriff (PDF)

A comparison of electrochemical capacitance-voltage measurements with numerical simulations for pseudomorphic high electron mobility transistor structures

Journal of applied physics, 1995-08, Vol.78 (4), p.2531-2536

1995

Volltextzugriff (PDF)

Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells

Applied physics letters, 1992-02, Vol.60 (6), p.751-753

1992

Volltextzugriff (PDF)

Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure

Applied physics letters, 1990-10, Vol.57 (17), p.1790-1792

1990

Volltextzugriff (PDF)

Photoelectrochemical capacitance-voltage measurements in GaN

Journal of electronic materials, 1998-05, Vol.27 (5), p.L26-L28

1998

Volltextzugriff (PDF)

Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5

Applied physics letters, 1998-07, Vol.73 (1), p.114-116

1998

Volltextzugriff (PDF)

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

Applied physics letters, 1987-07, Vol.51 (2), p.121-123

1987

Volltextzugriff (PDF)

Sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxy

Applied physics letters, 1992-09, Vol.61 (12), p.1432-1434

1992

Volltextzugriff (PDF)

Photoreflectance and the electric fields in a GaAs depletion region

Applied physics letters, 1990-04, Vol.56 (18), p.1769-1771

1990

Volltextzugriff (PDF)

Stress and Stability of Sputter Deposited A-15 and BCC Crystal Structure Tungsten Thin Films

MRS proceedings, 1997, Vol.472, Article 233

1997

Volltextzugriff (PDF)

Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

Journal of electronic materials, 1993-12, Vol.22 (12), p.1441-1444

1993

Volltextzugriff (PDF)

1 – 25 von 176

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(108)
Mit Volltextzugriff
(151)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Englisch
(138)
Französisch
(36)
Deutsch
(17)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

Molecular beam epitaxial growth of high-quality GaN nanocolumns

Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

Hydrogen incorporation, diffusivity and evolution in bulk ZnO

Electrochemical Schottky characteristics of ZnO for capacitance-voltage measurements

Evidence for a stable excitonic ground state in a spatially separated electron-hole system

Photoelectrochemical capacitance-voltage measurements of 4H-SiC

New AsGa related center in GaAs

On Hall scattering factors for holes in GaAs

Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures

Alloy scattering in p-type AlxGa1-xAs

Effect of parasitics on electrochemical capacitance-voltage profiling of pseudomorphic high electron mobility transistor structures

Charge accumulation of quantum dots at room temperature

A comparison of electrochemical capacitance-voltage measurements with numerical simulations for pseudomorphic high electron mobility transistor structures

Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells

Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure

Photoelectrochemical capacitance-voltage measurements in GaN

Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

Sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxy

Photoreflectance and the electric fields in a GaAs depletion region

Stress and Stability of Sputter Deposited A-15 and BCC Crystal Structure Tungsten Thin Films

Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

Suchergebnisse filtern