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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

Solid state communications, 2001-02, Vol.117 (10), p.571-575

2001

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Molecular beam epitaxial growth of high-quality GaN nanocolumns

Journal of crystal growth, 2006-01, Vol.287 (2), p.500-503

2006

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Hydrogen incorporation, diffusivity and evolution in bulk ZnO

Solid-state electronics, 2003-12, Vol.47 (12), p.2255-2259

2003

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Infrared studies of be-doped GaAs grown by molecular beam epitaxy at low temperatures

Journal of electronic materials, 1993-12, Vol.22 (12), p.1445-1448

1993

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Photoluminescence excitation of the AsiVGa 0.8 eV emission in GaAs grown by molecular beam epitaxy at low temperatures

Solid state communications, 1994-01, Vol.89 (3), p.293-296

1994

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THz generation from InN films based on interference between optical rectification and photocurrent surge

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

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Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2

2009

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GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current

IEEE electron device letters, 1993-03, Vol.14 (3), p.126-128

1993

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High-field magneto-spectroscopy of quasi-2D electrons and holes in InAs/Al xGa 1− xSb single quantum wells

Physica. B, Condensed matter, 1998, Vol.249, p.927-931

1998

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Saturation spectroscopy of electronic states in a magnetic field in InAs/Al xGa 1− xSb single quantum wells

Physica. E, Low-dimensional systems & nanostructures, 1998, Vol.2 (1), p.204-208

1998

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Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

Journal of electronic materials, 1993-12, Vol.22 (12), p.1441-1444

1993

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High-field magneto-spectroscopy of quasi-2D electrons and holes in InAs/AlxGa1−xSb single quantum wells

Physica. B, Condensed matter, 1998-06, Vol.249-251, p.927-931

1998

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Photoluminescence study of symmetric, coupled, double In xGa 1−xAs-GaAs quantum well structures

Solid state communications, 1993, Vol.86 (5), p.339-345

1993

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Photoluminescence excitation of the As iV Ga 0.8 eV emission in GaAs grown by molecular beam epitaxy at low temperatures

Solid state communications, 1994, Vol.89 (3), p.293-296

1994

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Saturation spectroscopy of electronic states in a magnetic field in InAs/AlxGa1−xSb single quantum wells

Physica. E, Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1-4), p.204-208

1998

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Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells

Materials science forum, 1993-10, Vol.143-147, p.611-616

1993

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Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor

IEEE electron device letters, 1992-08, Vol.13 (8), p.414-417

1992

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Comparison of OMVPE and MBE grown AlGaAs/InGaAs PHEMT structures

Journal of crystal growth, 1996-10, Vol.167 (3-4), p.406-414

1996

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Double heterojunction bipolar transistor in AlxGa1-xAs/GaAs1-ySby system

Electronics letters, 1991-09, Vol.27 (2), p.142-144

1991

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Photoluminescence study of symmetric, coupled, double InxGa1-xAs-GaAs quantum well structures

Solid state communications, 1993-05, Vol.86 (5), p.339-345

1993

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Effects of a buffer layer on free-carrier depletion in n-type GaAs

IEEE transactions on electron devices, 1991-06, Vol.38 (6), p.1280-1284

1991

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Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAs

Journal of crystal growth, 1989-02, Vol.95 (1), p.197-200

1989

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Incorporation rate variation at heterointerfaces during III–V molecular beam epitaxy

Applied surface science, 1992, Vol.56, p.677-683

1992

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Characterization of GaAs Surfaces Subjected to A Cl2/Ar High Density Plasma Etching Process

MRS proceedings, 1996, Vol.448

1996

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Characterization of GaAs Surfaces Subjected to A Cl 2 /Ar High Density Plasma Etching Process

MRS proceedings, 1996, Vol.448, Article 33

1996

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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

Molecular beam epitaxial growth of high-quality GaN nanocolumns

Hydrogen incorporation, diffusivity and evolution in bulk ZnO

Infrared studies of be-doped GaAs grown by molecular beam epitaxy at low temperatures

Photoluminescence excitation of the AsiVGa 0.8 eV emission in GaAs grown by molecular beam epitaxy at low temperatures

THz generation from InN films based on interference between optical rectification and photocurrent surge

Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN

GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current

High-field magneto-spectroscopy of quasi-2D electrons and holes in InAs/Al xGa 1− xSb single quantum wells

Saturation spectroscopy of electronic states in a magnetic field in InAs/Al xGa 1− xSb single quantum wells

Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

High-field magneto-spectroscopy of quasi-2D electrons and holes in InAs/AlxGa1−xSb single quantum wells

Photoluminescence study of symmetric, coupled, double In xGa 1−xAs-GaAs quantum well structures

Photoluminescence excitation of the As iV Ga 0.8 eV emission in GaAs grown by molecular beam epitaxy at low temperatures

Saturation spectroscopy of electronic states in a magnetic field in InAs/AlxGa1−xSb single quantum wells

Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells

Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor

Comparison of OMVPE and MBE grown AlGaAs/InGaAs PHEMT structures

Double heterojunction bipolar transistor in AlxGa1-xAs/GaAs1-ySby system

Photoluminescence study of symmetric, coupled, double InxGa1-xAs-GaAs quantum well structures

Effects of a buffer layer on free-carrier depletion in n-type GaAs

Effects of strain and surface reconstruction on the kinetics of indium incorporation in MBE growth of InAs

Incorporation rate variation at heterointerfaces during III–V molecular beam epitaxy

Characterization of GaAs Surfaces Subjected to A Cl2/Ar High Density Plasma Etching Process

Characterization of GaAs Surfaces Subjected to A Cl 2 /Ar High Density Plasma Etching Process

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