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Analysis of charge-carrier diffusion in the photosensing films of HgCdTe infrared focal plane array photodetectors

Journal of applied physics, 2015-09, Vol.118 (12)

2015

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Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Effects of generation/recombination processes and leakage current through interfacial “punctures” on electrical characterization of unipolar directly bonded semiconductor structures

Solid-state electronics, 2004-12, Vol.48 (12), p.2165-2173

Stuchinsky, V.A.

2004

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MTF-Based Approach to Determining the Bulk Diffusion Length of Photogenerated Charge Carriers in the Absorber Material of MCT-Based Infrared Focal Plane Arrays

Optoelectronics, instrumentation, and data processing, 2023-04, Vol.59 (2), p.262-272

2023

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Observation of a long-range electric drift of negatively charged vacancies in the space-charge regions of Au/n-Si Schottky diodes

Journal of physics. Condensed matter, 1995-09, Vol.7 (39), p.7643-7649

1995

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Method for Measuring the Modulation Transfer Function of IR Objective

Optoelectronics, instrumentation, and data processing, 2022-06, Vol.58 (3), p.250-256

2022

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Influence of the Step Composition Profile on the Formation of Inversion in Cadmium—Mercury—Tellurium Films

Optoelectronics, instrumentation, and data processing, 2019-09, Vol.55 (5), p.455-461

2019

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Size effects in percolation of small regions on planar and cylindrical surfaces

Technical physics letters, 2013-04, Vol.39 (4), p.380-383

Stuchinsky, V. A.

2013

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Simulation of the Spatial Distribution of the Local Quantum Efficiency and Photoelectric Characteristics of Photodiode-Based Infrared Focal Plane Arrays

Optoelectronics, instrumentation, and data processing, 2018-11, Vol.54 (6), p.623-630

2018

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Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

Optoelectronics, instrumentation, and data processing, 2019-09, Vol.55 (5), p.519-524

2019

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Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Infrared physics & technology, 2017-03, Vol.81, p.223-227

2017

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Improved characterization methods for unipolar directly bonded semiconductor junctions

Solid-state electronics, 2005, Vol.49 (1), p.9-17

2005

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New methods for electrical characterization of unipolar directly bonded Si/Si structures permitting quantitative evaluation of their lateral non-uniformity

Materials science in semiconductor processing, 2001-02, Vol.4 (1-3), p.177-179

2001

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A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles

Technical physics letters, 2012-09, Vol.38 (9), p.845-848

2012

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Improved characterization methods for unipolar directly bonded semiconductor junctions

Solid-state electronics, 2005, Vol.49 (1), p.9-17

2005

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Accumulation of Radiation Defects in Oxygen-Rich n-Type Silicon Heat-Treated at Temperatures from 600 to 1000 °C

Physica status solidi. A, Applied research, 1986-07, Vol.96 (1), p.129-134

1986

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Monte Carlo Simulation of Photoelectric Characteristics of Mercury-Cadmium-Tellurium- Based Infrared Focal-Plane-Array Detectors

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4924-4930

2018

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Monte Carlo Simulation of Photoelectric Characteristics of Mercury–Cadmiu–Tellurium- Based Infrared Focal-Plane-Array Detectors

IEEE transactions on electron devices, 2018-01, Vol.65 (11), p.4924

2018

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Rationale for Combat Use of Aircraft EW Equipment at Operational Depth to Gain Information Superiority

Military thought, 2016-04, Vol.25 (2), p.23

2016

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Analysis of charge-carrier diffusion in the photosensing films of HgCdTe infrared focal plane array photodetectors

Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

Effects of generation/recombination processes and leakage current through interfacial “punctures” on electrical characterization of unipolar directly bonded semiconductor structures

MTF-Based Approach to Determining the Bulk Diffusion Length of Photogenerated Charge Carriers in the Absorber Material of MCT-Based Infrared Focal Plane Arrays

Observation of a long-range electric drift of negatively charged vacancies in the space-charge regions of Au/n-Si Schottky diodes

Method for Measuring the Modulation Transfer Function of IR Objective

Influence of the Step Composition Profile on the Formation of Inversion in Cadmium—Mercury—Tellurium Films

Size effects in percolation of small regions on planar and cylindrical surfaces

Simulation of the Spatial Distribution of the Local Quantum Efficiency and Photoelectric Characteristics of Photodiode-Based Infrared Focal Plane Arrays

Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors

Impact of high-conductivity n-type anti-debiasing layer on the photoresponse of “leaking” and “non-leaking” FPA elements in photovoltaic MCT-based n-on-p infrared FPA detectors

Improved characterization methods for unipolar directly bonded semiconductor junctions

New methods for electrical characterization of unipolar directly bonded Si/Si structures permitting quantitative evaluation of their lateral non-uniformity

A model to describe the humplike feature observed in the accumulation branch of capacitance-voltage characteristics of MOS capacitors with oxide-hosted silicon nanoparticles

Improved characterization methods for unipolar directly bonded semiconductor junctions

Accumulation of Radiation Defects in Oxygen-Rich n-Type Silicon Heat-Treated at Temperatures from 600 to 1000 °C

Monte Carlo Simulation of Photoelectric Characteristics of Mercury-Cadmium-Tellurium- Based Infrared Focal-Plane-Array Detectors

Monte Carlo Simulation of Photoelectric Characteristics of Mercury–Cadmiu–Tellurium- Based Infrared Focal-Plane-Array Detectors

Rationale for Combat Use of Aircraft EW Equipment at Operational Depth to Gain Information Superiority

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