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Strain induced deep electronic states around threading dislocations in GaN

Physical review letters, 2004-11, Vol.93 (19), p.196401.1-196401.4, Article 196401

2004

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Evolution of the microstructure during annealing of porous silicon multilayers

Journal of applied physics, 2004-01, Vol.95 (2), p.497-503

2004

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Effect of annealing on the In and N distribution in InGaAsN quantum wells

Applied physics letters, 2002-10, Vol.81 (15), p.2719-2721

2002

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Nitrogen Photofixation at Nanostructured Iron Titanate Films

Angewandte Chemie International Edition, 2001-11, Vol.40 (21), p.3993-3995

2001

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Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

Journal of applied physics, 2002-08, Vol.92 (4), p.2000-2005

2002

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Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm, Tb, Dy, Eu, Sm, Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

Optical materials, 2006-05, Vol.28 (6), p.790-793

2006

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Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

Journal of applied physics, 2005-03, Vol.97 (6), p.064907-064907-6

2005

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Texture of Cu(In,Ga)Se 2 thin films and nanoscale cathodoluminescence

Journal of physics. Condensed matter, 2004-01, Vol.16 (2), p.S85-S89

2004

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Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers

Progress in photovoltaics, 2004-01, Vol.12 (1), p.47-54

2004

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Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

Thin solid films, 2003-03, Vol.427 (1), p.176-180

2003

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Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Journal of applied physics, 2001-10, Vol.90 (8), p.3792-3798

2001

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Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1998-04, Vol.77 (4), p.1013-1025

1998

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The influence of surface treatments in hot acid solutions on the corrosion resistance and oxide structure of stainless steels

Corrosion science, 2005-03, Vol.47 (3), p.757-769

2005

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Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron-diffraction measurements

Applied physics letters, 1994-06, Vol.64 (26), p.3617-3619

1994

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Phonons as probes in self-organized SiGe islands

Applied physics letters, 1997-12, Vol.71 (26), p.3856-3858

1997

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Pyramidal-plane ordering in AlGaN alloys

Applied physics letters, 2003-01, Vol.82 (4), p.547-549

2003

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Strain-induced island scaling during Si1−xGex heteroepitaxy

Applied physics letters, 1998-01, Vol.72 (2), p.179-181

1998

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Simple Fabrication of Mg2Si Thermoelectric Generator

Solid state phenomena, 2003-06, Vol.93, p.447-452

2003

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Electron radiation damage in Cu(In,Ga)Se, analysed in-situ by cathodoluminescence in a transmission electron microscope

Physica status solidi. A, Applied research, 2005-09, Vol.202 (12), p.2336-2343

2005

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Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control

Solid state phenomena, 2003-01, Vol.93, p.257-268

2003

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Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.318-321

2001

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Inversion domains and pinholes in GaN grown over Si(111)

Applied physics letters, 2003-06, Vol.82 (25), p.4471-4473

2003

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Amorphous-crystalline phase transition during the growth of thin films: The case of microcrystalline silicon

Physical review. B, Condensed matter, 2001-08, Vol.64 (8), Article 085402

2001

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Microstructure of laser-crystallized silicon thin films on glass substrate

Journal of applied physics, 2002-04, Vol.91 (7), p.4125-4130

2002

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Blue, green and red emission from Ce3+, Tb3+ and Eu3+ ions in amorphous GaN and AlN thin films

Journal of non-crystalline solids, 2002-04, Vol.299-302, p.709-713

2002

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Strain induced deep electronic states around threading dislocations in GaN

Evolution of the microstructure during annealing of porous silicon multilayers

Effect of annealing on the In and N distribution in InGaAsN quantum wells

Nitrogen Photofixation at Nanostructured Iron Titanate Films

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm, Tb, Dy, Eu, Sm, Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

Texture of Cu(In,Ga)Se 2 thin films and nanoscale cathodoluminescence

Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers

Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

The influence of surface treatments in hot acid solutions on the corrosion resistance and oxide structure of stainless steels

Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron-diffraction measurements

Phonons as probes in self-organized SiGe islands

Pyramidal-plane ordering in AlGaN alloys

Strain-induced island scaling during Si1−xGex heteroepitaxy

Simple Fabrication of Mg2Si Thermoelectric Generator

Electron radiation damage in Cu(In,Ga)Se, analysed in-situ by cathodoluminescence in a transmission electron microscope

Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Inversion domains and pinholes in GaN grown over Si(111)

Amorphous-crystalline phase transition during the growth of thin films: The case of microcrystalline silicon

Microstructure of laser-crystallized silicon thin films on glass substrate

Blue, green and red emission from Ce3+, Tb3+ and Eu3+ ions in amorphous GaN and AlN thin films

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