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Selective etching of dislocations in GaN grown by low-pressure solution growth

Journal of crystal growth, 2010-10, Vol.312 (20), p.3040-3045

2010

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Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm, Tb, Dy, Eu, Sm, Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

Optical materials, 2006-05, Vol.28 (6), p.790-793

2006

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Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

Thin solid films, 2003-03, Vol.427 (1), p.176-180

2003

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Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.318-321

2001

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High mobility thin film transistors by Nd:YVO4-laser crystallization

Thin solid films, 2001-02, Vol.383 (1-2), p.143-146

2001

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Nano-diamond films deposited by direct current glow discharge assisted chemical vapor deposition

Diamond and related materials, 2000-04, Vol.9 (3-6), p.866-871

2000

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Texture and electronic activity of grain boundaries in Cu(In, Ga)Se2 thin films

Applied physics. A, Materials science & processing, 2006-01, Vol.82 (1), p.1-7

2006

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Expression cloning of a cDNA for the major Fanconi anaemia gene, FAA

Nature genetics, 1996-11, Vol.14 (3), p.320-323

1996

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Carrier Recombination at Screw Dislocations in n-Type AlGaN Layers

physica status solidi (b), 1999-11, Vol.216 (1), p.409-414

1999

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Formation of amorphous layers by solid-state reaction from thin Ir films on Si(100)

Applied physics. A, Materials science & processing, 1999-04, Vol.68 (4), p.451-455

1999

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Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

Solar energy materials and solar cells, 2001, Vol.65 (1), p.503-508

2001

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Electron microscopic studies of anodic oxide films on the AZ91HP alloy

Materials research (São Carlos, São Paulo, Brazil), 2003-01, Vol.6 (1), p.103-106

2003

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Amorphous and crystalline IrSi Schottky barriers on silicon

Applied physics. A, Materials science & processing, 1998-06, Vol.66 (6), p.629-637

1998

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Solution growth of silicon on multicrystalline Si substrate: growth velocity, defect structure and electrical activity

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.694-699

1996

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Reduction of the dislocation density in GaN during low-pressure solution growth

Journal of crystal growth, 2008-07, Vol.310 (14), p.3351-3357

2008

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Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

Journal of applied physics, 2005-03, Vol.97 (6), p.064907-064907-6

2005

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Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers

Progress in photovoltaics, 2004-01, Vol.12 (1), p.47-54

2004

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Microscopic growth mechanisms of semiconductors: Experiments and models

Journal of crystal growth, 1984-11, Vol.69 (2), p.561-580

1984

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Energetic and kinetic aspects of the growth of pseudomorphic SiGe islands

Journal of crystal growth, 2008-07, Vol.310 (14), p.3261-3267

2008

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Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.392-394

1997

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Growth of cubic SiC single crystals by the physical vapor transport technique

Journal of crystal growth, 2007-10, Vol.308 (2), p.241-246

2007

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The influence of surface treatments in hot acid solutions on the corrosion resistance and oxide structure of stainless steels

Corrosion science, 2005-03, Vol.47 (3), p.757-769

2005

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Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission

Journal of non-crystalline solids, 2006-06, Vol.352 (9-20), p.1290-1293

2006

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High quality GexSi1-x by heteroepitaxial lateral overgrowth

Journal of crystal growth, 1992-08, Vol.121 (4), p.790-794

1992

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Electron radiation damage in Cu(In,Ga)Se2 analysed in-situ by cathodoluminescence in a transmission electron microscope

Physica status solidi. A, Applications and materials science, 2005-09, Vol.202 (12), p.2336-2343

2005

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Selective etching of dislocations in GaN grown by low-pressure solution growth

Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm, Tb, Dy, Eu, Sm, Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering

Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

High mobility thin film transistors by Nd:YVO4-laser crystallization

Nano-diamond films deposited by direct current glow discharge assisted chemical vapor deposition

Texture and electronic activity of grain boundaries in Cu(In, Ga)Se2 thin films

Expression cloning of a cDNA for the major Fanconi anaemia gene, FAA

Carrier Recombination at Screw Dislocations in n-Type AlGaN Layers

Formation of amorphous layers by solid-state reaction from thin Ir films on Si(100)

Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

Electron microscopic studies of anodic oxide films on the AZ91HP alloy

Amorphous and crystalline IrSi Schottky barriers on silicon

Solution growth of silicon on multicrystalline Si substrate: growth velocity, defect structure and electrical activity

Reduction of the dislocation density in GaN during low-pressure solution growth

Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers

Microscopic growth mechanisms of semiconductors: Experiments and models

Energetic and kinetic aspects of the growth of pseudomorphic SiGe islands

Micropipes and polytypism as a source of lateral inhomogeneities in SiC substrates

Growth of cubic SiC single crystals by the physical vapor transport technique

The influence of surface treatments in hot acid solutions on the corrosion resistance and oxide structure of stainless steels

Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission

High quality GexSi1-x by heteroepitaxial lateral overgrowth

Electron radiation damage in Cu(In,Ga)Se2 analysed in-situ by cathodoluminescence in a transmission electron microscope

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