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Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

IEEE transactions on microwave theory and techniques, 2003-06, Vol.51 (6), p.1705-1711

2003

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Ultrahigh-speed direct digital synthesizer using InP DHBT technology

IEEE journal of solid-state circuits, 2002-09, Vol.37 (9), p.1115-1119

2002

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Diffuse X-ray scattering from misfit dislocations at semiconductor hetero-interfaces

Journal of physics. D, Applied physics, 1995-04, Vol.28 (4A), p.A92-A96

1995

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Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

IEEE transactions on electron devices, 1993-07, Vol.40 (7), p.1211-1214

1993

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A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

IEEE journal of solid-state circuits, 1999-09, Vol.34 (9), p.1225-1232

1999

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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

IEEE electron device letters, 1994-11, Vol.15 (11), p.477-479

1994

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Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence

Journal of applied physics, 1999-12, Vol.86 (11), p.6160-6163

1999

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LT-GaAs detector with 451 fs response at 1.55 mu m via two-photon absorption

Electronics letters, 1999-01, Vol.35 (2), p.173-174

1999

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Compact W-band solid-state MMIC high power sources

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.2, p.955-958 vol.2

2000

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Monolithic HEMT-HBT integration by selective MBE

IEEE transactions on electron devices, 1995-04, Vol.42 (4), p.618-623

1995

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Thermal and Si-beam assisted desorption of SiO2 from silicon in ultrahigh vacuum

Journal of applied physics, 1987-04, Vol.61 (8), p.2894-2897

1987

Volltextzugriff (PDF)

Infrared intersubband absorption in GaAs/AlAs multiple quantum wells

Applied physics letters, 1989-05, Vol.54 (21), p.2145-2147

1989

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A D-band monolithic fundamental oscillator using InP-based HEMT's

IEEE transactions on microwave theory and techniques, 1993-12, Vol.41 (12), p.2336-2344

1993

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Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators, and switches

IEEE transactions on microwave theory and techniques, 1993-12, Vol.41 (12), p.2295-2302

1993

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The optical response of epitaxial lift-off HEMT's to 140 GHz

IEEE journal of quantum electronics, 1997-09, Vol.33 (9), p.1507-1516

1997

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94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

IEEE electron device letters, 1990-12, Vol.11 (12), p.585-587

1990

Volltextzugriff (PDF)

A novel monolithic HBT-p-i-n-HEMT integrated circuit with HBT active feedback and p-i-n diode variable gain control

IEEE transactions on microwave theory and techniques, 1995-05, Vol.43 (5), p.1004-1009

1995

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Future technologies for commercial and defense telecommunication electronics

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.3, p.1069-1071 vol.3

1999

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Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures

Applied physics letters, 1991-05, Vol.58 (20), p.2273-2275

1991

Volltextzugriff (PDF)

Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads

IEEE journal of solid-state circuits, 1993-10, Vol.28 (10), p.1011-1017

1993

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A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier

IEEE journal of solid-state circuits, 1996-05, Vol.31 (5), p.714-718

1996

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High-power V-band pseudomorphic InGaAs HEMT

IEEE electron device letters, 1991-05, Vol.12 (5), p.213-214

1991

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High-gain W band pseudomorphic InGaAs power HEMTs

IEEE electron device letters, 1991-04, Vol.12 (4), p.149-150

1991

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High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts

IEEE electron device letters, 1991-09, Vol.12 (9), p.471-473

1991

Volltextzugriff (PDF)

Optimising a GaAs HBT amplifier for maximum gain efficiency

Electronics letters, 1996-11, Vol.32 (23), p.2181-2183

1996

Volltextzugriff (PDF)

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Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power

Ultrahigh-speed direct digital synthesizer using InP DHBT technology

Diffuse X-ray scattering from misfit dislocations at semiconductor hetero-interfaces

Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax

Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence

LT-GaAs detector with 451 fs response at 1.55 mu m via two-photon absorption

Compact W-band solid-state MMIC high power sources

Monolithic HEMT-HBT integration by selective MBE

Thermal and Si-beam assisted desorption of SiO2 from silicon in ultrahigh vacuum

Infrared intersubband absorption in GaAs/AlAs multiple quantum wells

A D-band monolithic fundamental oscillator using InP-based HEMT's

Monolithic GaAs HBT p-i-n diode variable gain amplifiers, attenuators, and switches

The optical response of epitaxial lift-off HEMT's to 140 GHz

94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

A novel monolithic HBT-p-i-n-HEMT integrated circuit with HBT active feedback and p-i-n diode variable gain control

Future technologies for commercial and defense telecommunication electronics

Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures

Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads

A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier

High-power V-band pseudomorphic InGaAs HEMT

High-gain W band pseudomorphic InGaAs power HEMTs

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts

Optimising a GaAs HBT amplifier for maximum gain efficiency

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