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In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Advances in materials science and engineering, 2023, Vol.2023, p.1-12

2023

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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

AIP advances, 2019-07, Vol.9 (7), p.075116-075116-6

2019

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Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Advances in materials science and engineering, 2022, Vol.2022, p.1-7

2022

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Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW)

International journal of analytical chemistry, 2022, Vol.2022, p.1-6

2022

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Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW)

International journal of analytical chemistry, 2021-12, Vol.2021, p.3402411-9

2021

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Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Micromachines (Basel), 2021-04, Vol.12 (5), p.502

2021

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Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Advances in materials science and engineering, 2021, Vol.2021, p.1-10

2021

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Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Beilstein journal of nanotechnology, 2016, Vol.7 (1), p.1783-1793

2016

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Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Advances in OptoElectronics (Hindawi), 2017-01, Vol.2017

2017

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Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Applied surface science, 2023-02, Vol.611, p.155769, Article 155769

2023

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Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Sensors and actuators. A. Physical., 2022-02, Vol.334, p.113331, Article 113331

2022

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Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-09, Vol.39 (5)

2021

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Lithography-Free Technology for the Preparation of Digital Microfluidic

International journal of analytical chemistry, 2022-05, Vol.2022

2022

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Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

Advances in OptoElectronics (Hindawi), 2018-01, Vol.2018, p.1-8

2018

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Epitaktisches wachstum und optoelektronische eigenschaften von ga(as)sb-quantenpunkten auf (al)gaas bei variation der barrieren

Straßner, Johannes Helmut

2016

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Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring

Applied surface science, 2015-12, Vol.357, p.530-538

2015

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GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm

Journal of crystal growth, 2014-10, Vol.404, p.48-53

2014

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1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0)

Advances in OptoElectronics (Hindawi), 2019-01, Vol.2019, p.1-7

2019

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GaSb quantum dots on GaAs with high localization energy of 710meV and an emission wavelength of 1.3µm

Journal of crystal growth, 2014-10, Vol.404, p.48-53

2014

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GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm

Journal of crystal growth, 2014-10, Vol.404, p.48-53

2014

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Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4 f Set-Up and Film-Waveguide Lens

Advances in OptoElectronics (Hindawi), 2017-12, Vol.2017, p.1-6

2017

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1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

Advances in OptoElectronics (Hindawi), 2018-01, Vol.2018, p.1-7

2018

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Virtual humans with personalized perception and dynamic levels of knowledge

Computer animation and virtual worlds, 2005-07, Vol.16 (3-4), p.331-342

2005

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Monolithically integrated fourier-optical transverse-mode selector for broad area lasers

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017, p.1-1

2017

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Ga(As)Sb/GaAs quantum dots for emission around 1300 nm

2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, 2013, p.1-1

2013

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In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Lithography-Free Technology for the Preparation of Digital Microfluidic (DMF) Lab-Chips with Droplet Actuation by Optoelectrowetting (OEW)

Microdroplet Actuation via Light Line Optoelectrowetting (LL-OEW)

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens

Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Optoelectrowetting (OEW) with push-actuation of microdroplets at small frequencies and OEW equations revisited

Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement

Lithography-Free Technology for the Preparation of Digital Microfluidic

Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting

Epitaktisches wachstum und optoelektronische eigenschaften von ga(as)sb-quantenpunkten auf (al)gaas bei variation der barrieren

Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring

GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 μm

1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0)

GaSb quantum dots on GaAs with high localization energy of 710meV and an emission wavelength of 1.3µm

GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm

Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4 f Set-Up and Film-Waveguide Lens

1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

Virtual humans with personalized perception and dynamic levels of knowledge

Monolithically integrated fourier-optical transverse-mode selector for broad area lasers

Ga(As)Sb/GaAs quantum dots for emission around 1300 nm

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