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Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.557-561

2021

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Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (12), p.989-994

2021

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Spontaneous and stimulated emission in InAs-based LED heterostructures

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66044

2019

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Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2-300 K temperature range

Journal of physics. Conference series, 2017-11, Vol.917 (5), p.52005

2017

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Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region

Technical physics letters, 2020-02, Vol.46 (2), p.150-153

2020

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Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.239-244

2017

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Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Chemosorption hydrogen gas sensor based on MOSFET with optical activation

Journal of physics. Conference series, 2014-01, Vol.558 (1), p.12039-5

2014

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High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)

Semiconductors (Woodbury, N.Y.), 2010-02, Vol.44 (2), p.263-268

2010

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Spontaneous and stimulated emission in InAsSb-based LED heterostructures

Infrared physics & technology, 2017-09, Vol.85, p.246-250

2017

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Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3–5 μm

Applied surface science, 1999-04, Vol.142 (1), p.257-261

1999

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Voltage dependence of gas-sensing behaviour of SnO2-gate FETs

Sensors and actuators. B, Chemical, 1994-04, Vol.19 (1-3), p.543-545

1994

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Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

Journal of applied physics, 2014-06, Vol.115 (22)

2014

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Characteristics of diode humidity sensors based on SnO2-sensing properties

Sensors and actuators. B, Chemical, 1994-04, Vol.19 (1-3), p.457-459

1994

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Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers

Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.73-80

2013

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Electroluminescence and photoelectric properties of type II broken-gap n -In(Ga)As(Sb)/ N -GaSb heterostructures

Journal of applied physics, 1999-12, Vol.86 (11), p.6264-6268

1999

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High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

Semiconductors (Woodbury, N.Y.), 2013-09, Vol.47 (9), p.1258-1263

2013

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Les lieux du bonheur. Approches littéraires: Nouvelles Recherches sur l'Imaginaire, XLIV

2022

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Spectral characteristics of mid-infrared light-emitting diodes based on InAs(Sb,P)

Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki, 2016-02, p.76-84

2016

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Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1501-1504

2011

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Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C

Technical physics, 2012, Vol.57 (1), p.69-73

2012

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Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

Technical physics, 2011-04, Vol.56 (4), p.520-525

2011

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Photodiodes for a 1.5–4.8 µm spectral range based on type-II GaSb/InGaAsSb heterostructures

Semiconductors (Woodbury, N.Y.), 2001-04, Vol.35 (4), p.453-458

2001

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Ultimate InAsSbP solid solutions for 2.6–2.8-μm LEDs

Technical physics letters, 2001-07, Vol.27 (7), p.611-614

2001

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Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Spontaneous and stimulated emission in InAs-based LED heterostructures

Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2-300 K temperature range

Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region

Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells

Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

Chemosorption hydrogen gas sensor based on MOSFET with optical activation

High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)

Spontaneous and stimulated emission in InAsSb-based LED heterostructures

Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3–5 μm

Voltage dependence of gas-sensing behaviour of SnO2-gate FETs

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

Characteristics of diode humidity sensors based on SnO2-sensing properties

Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers

Electroluminescence and photoelectric properties of type II broken-gap n -In(Ga)As(Sb)/ N -GaSb heterostructures

High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

Les lieux du bonheur. Approches littéraires: Nouvelles Recherches sur l'Imaginaire, XLIV

Spectral characteristics of mid-infrared light-emitting diodes based on InAs(Sb,P)

Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure

Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C

Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

Photodiodes for a 1.5–4.8 µm spectral range based on type-II GaSb/InGaAsSb heterostructures

Ultimate InAsSbP solid solutions for 2.6–2.8-μm LEDs

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